M3–1/4
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
BC847 BC848
Rating Symbol BC846 BC850 BC849 Unit
Collector–Emitter V oltage V CEO 65 45 30 V
Collector–Base V oltage V CBO 80 50 30 V
Emitter–Base V oltage V EBO 6.0 6.0 5.0 V
Collector Current — Continuous I C100 100 100 mAdc
Collector Current(Peak value) I CM 200 200 200 mAdc
Emitter Current(Peak value) I EM 200 200 200 mAdc
Base Current(Peak value) I BM 200 200 200 mAdc
SOLDERING CHARACTERISTICS
Characteristic Symbol Unit
Solder Heat Resistance 265 °C
Solderability 240 to 265 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD
TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient Rθθ
θθ
θJA 556 °C/W
Total Device Dissipation PD
Alumina Substrate, (2) TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient Rθθ
θθ
θJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
BC846A,B 65 — —
(IC = 10 mA) BC847A,B,C, BC850B,C V(BR)CEO 45 — — v
BC848A,B,C, BC849B,C 30 — —
Collector–Emitter Breakdown V oltage
BC846A,B 80 — —
(IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C V(BR)CES 50 — — v
BC848A,B,C, BC849B,C 30 — —
Collector–Base Breakdown V oltage BC846A,B 80 — —
(IC = 10 µA) BC847A,B,C, BC850B,C V(BR)CBO 50 — — v
BC848A,B,C, BC849B,C 30 — —
Emitter–Base Breakdown V oltage BC846A,B BC847A,B,C 6.0
(IE = 1.0 µA) BC848A,B,C, BC849B,C, V(BR)EBO 5.0
BC850B,C 5.0
Collector Cutoff Current (VCB = 30 V) ICBO ——15nA
(VCB = 30 V, TA = 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
1
3
2
M3–2/4
BC846AL T1,BLT1 BC847AL T1,BL T1 CLT1 thru BC850BL T1,CL T1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
h FE —90——
(I
C
= 10 µA, V
CE
= 5.0 V) BC846B, BC847B, BC848B
— 150 —
BC847C, BC848C
— 270 —
(I
C
= 2.0 mA, V
CE
= 5.0 V) BC846A, BC847A, BC848A
110 180 220
BC846B, BC847B, BC848B, BC849B, BC850B
200 290 450
BC847C, BC848C, BC849C, BC850C
420 520 800
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) — — 0.25 V
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — — 0.6
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) — 0.7 — V
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — 0.9 —
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) 580 660 700 mV
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) — — 770
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T100 — — MHz
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A NF dB
V CE = 5.0 Vdc, R S = 2.0 kΩ,BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C — — 10
BC849B,C, BC850B,C — — 4 . 0
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain I C , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” V oltages
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
V CE = 10 V
T A = 25°C
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
T A = 25°C
V BE(sat) @ I C /I B=10
V BE(on) @ V CE = 10 V
V CE(sat) @ I C /I B = 10
T A = 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
θθ
θθ
θVB , TEMPERATURE COEFFICIENT (mV/ ° C)
1.0
1.2
1.6
2.0
2.4
2.8
3.0
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
VCE, COLLECTOR– EMITTER VOLT AGE (V)
I C= 200 mA
–55°C to +125°C
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
0.2 1.0 10 100
0.02 0.1 1.0 10 20
2.0
1.6
1.2
0.8
0.4
0
I C =
10 mA
I C = 100 mA
I C =
20 mA
I C = 50 mA
hFE, NORMALIZED DC CURRENT GAIN
M3–3/4
BC846AL T1,BLT1 BC847AL T1,BL T1 CLT1 thru BC850BL T1,CLT1
BC847/BC848
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
T A = 25°C
V BE(sat) @ I C /I B = 10
VBE @ VCE = 5.0 V
V CE = 10V
T A = 25°C
T A = 25°C
V CE = 5V
T A = 25°C
VCE(sat) @ I C /I B= 10
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
θθ
θθ
θVB , TEMPERATURE COEFFICIENT (mV/°C)
hFE , DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE(pF)
I C =
10 mA
100mA
20mA 200mA
50mA
T A= 25°C
θ VB for V BE –55°C to 125°C
C ob
C ib
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
1.0
0.8
0.6
0.4
0.2
0
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
0
0.4 0.6 0.81.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.2 0.5 1.0 2.0 5.0 10 20 50 100 2000.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
M3–4/4
BC846ALT1, BLT1 BC847ALT1, BL T1 CLT1 thru BC850BL T1, CLT1
BC846
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
C, CAPACITANCE (pF)
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
C ob
C ib
T A= 25°C V CE= 5 V
T A= 25°C
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
