1/7
®
TN25 and TYNx25 Series
STANDARD 25A SCRs
April 2002 - Ed: 4A
MAIN FEATUR ES:
DESCRIPTION
The TYN / TN25 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior perf ormance in surge current capabilities.
Symbol Value Unit
IT(RMS) 25 A
VDRM/VRRM 600 to 1000 V
IGT 40 mA
ABSOLUTE RATINGS (lim iting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C 25 A
T(AV) Average on-state current (180° conduction angle) Tc = 100°C 16 A
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25°C 314 A
tp = 10 ms 300
I²tI
²
t Value for fusing tp = 10 ms Tj = 25°C 450 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg
Tj Storage junction temperature range
Operatin g junction temp erature range - 40 to + 150
- 40 to + 125 °C
VRGM Maximum peak reverse gate voltage 5 V
A
K
G
D2PAK
(TN25-G)
G
A
A
K
TO-220AB
(TYN)
A
A
G
K
TN25 and TYNx25 Series
2/7
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMA L RESISTANCES
S = Copper surface under tab
PRODUCT SELECTOR
Symbol Test Conditions Value Unit
IGT VD = 12 V RL = 33 MIN. 4 mA
MAX. 40
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kTj = 125°C MIN. 0.2 V
IHIT = 500 mA Gate open MAX. 50 mA
ILIG = 1.2 IGT MAX. 90 mA
dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs
VTM ITM = 50 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.77 V
RdDynamic resistance Tj = 125°C MAX. 14 m
IDRM
IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA
Tj = 125°C 4 mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 1.0 °C/W
Rth(j-a) Junction to ambient (DC) TO-220AB 60 °C/W
S = 1 cm²D²PAK 45
Part Number Voltage (xxx) Sensitivity Package
600 V 800 V 1000 V
TN2540-xxxG X X X 40 mA D²PAK
TYNx25 X X X 40 mA TO-220AB
TN25 and TYNx25 Series
3/7
ORDERING INFORMATION
TN 25 40 - 600 G (-TR)
STANDARD
SCR
SERIES
CURRENT: 25A SENSITIVITY:
40: 40mA VOLTAGE:
600: 600V
800: 800V
1000: 1000V
PACKAGE:
G: D PAK
2
PACKING MODE:
Blank:Tube
-TR:Tape & Reel
TYN 6 25 (RG)
CURRENT: 25A
VOLTAGE:
6: 600V
8: 800V
10: 1000V
STANDARD
SCR
SERIES
PACKING MODE
Blank: Bulk
RG:Tube
OTHER INFORMATION
Note: x = voltage
Part Number Marking Weight Base Quantity Packing mode
TN2540-x00G TN2540x00G 1.5 g 50 Tube
TN2540-x00G-TR TN2540x00G 1.5 g 1000 Tape & reel
TYNx25 TYNx25 2.3 g 250 Bulk
TYNx25RG TYNx25 2.3 g 50 Tube
TN25 and TYNx25 Series
4/7
Fig. 1: Maximum average power dissipation
versus average on-state current. Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm² (for D²PAK).
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative varia tio n of gate trigger current,
holding current and latching current versus
junction tempe rature.
Fig. 5: Surge peak on-state current versus
number of cycles.
0246810121416
0
2
4
6
8
10
12
14
16
18
20
22
24 P(W)
α= 180°
IT(av)(A)
360°
α
0 25 50 75 100 125
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28 IT(av)(A)
D.C.
α= 180°
Tcase(°C)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 IT(av)(A)
D.C.
α= 180°
Tamb(°C)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 K = [Zth/Rth]
Zth(j-c)
Zth(j-a)
tp(s)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Tj(°C)
1 10 100 100
0
0
50
100
150
200
250
300
350 ITSM(A)
Non repetitive
Tj initial = 2 5°C
Repetitive
Tcase = 100°C
Number of cycles
One cycle
tp = 10m s
TN25 and TYNx25 Series
5/7
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 m s, and corresponding values of I²t.
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(D2PAK).
0.01 0.10 1.00 10.00
100
1000
2000 ITSM(A),I2t(A2s)
Tj initial = 2 5°C
ITSM
I2t
dI/dt
limitattion
tp(ms)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1
10
100
300 ITM(A)
Tj = 25°C
Tj = Tj max.
Tj max.:
Vto = 0.77V
Rd = 14m
VTM(V)
0 4 8 1216202428323640
0
10
20
30
40
50
60
70
80 Rth(j-a)(°C/W)
S(cm2)
TN25 and TYNx25 Series
6/7
PACKAGE MECHANI CAL DATA
D2PAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2
A
C2
D
R
2.0 MIN.
FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
FOOTPRINT DIMENSIONS (in milli meters )
D2PAK (Plastic)
8.90 3.70
1.30
5.08
16.90
10.30
TN25 and TYNx25 Series
7/7
PACKAGE MECHANI CAL DATA
TO-220AB (Plastic)
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
ec1
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by i m pli cation or otherw i se under any patent or pa tent rights o f ST M i croele ct ronics. Spec i ficati ons m entio ned in thi s p ubl i cati on a re su bj ect
to c hange w i thou t notice. T hi s pu bl i catio n supersed es and replaces al l in formation prev i ously suppli ed. STM i croe l ectronics products are n ot
author ized for use as cri t i cal compon ents in lif e supp ort devic es or systems with out express written appr oval of STM i croel ectronics .
© The S T l ogo is a registered trademark of STM i cro el ectronics
© 2002 STM i croelectro ni cs - Printed i n It al y - All R i ghts Reserved
STMicr oelectronics GROUP O F COMPANIES
Australi a - B razil - Canada - C hi na - Fin l and - France - Germany
Hong Ko ng - India - Isreal - Ital y - Japan - Mal aysia - Malta - Morocco - Sing apore
Spain - Sweden - Swi tzerl and - U ni ted Kingdom - Unit ed Stat es.
http://www.st.com