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7MBR30VKC060-50 IGBT Modules
IGBT MODULE (V series)
600V / 30A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 1.3-1.7 Nm (M4)
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum
ratings Units
Inverter
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Collector current
IcContinuous TC=100°C 30
A
Icp 1ms TC=80°C 60
-Ic30
-Ic pulse 1ms 60
Collector power dissipation PC1 device 125 W
Brake
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Collector current ICContinuous TC=80°C 30 A
ICP 1ms TC=80°C 60
Collector power dissipation PC1 device 125 W
Repetitive peak reverse voltage (Diode) VRRM 600 V
Converter
Repetitive peak reverse voltage VRRM 800 V
Average output current IO50Hz/60Hz, sine wave 30 A
Surge current (Non-Repetitive) IFSM 10ms, Tj=150°C
half sine wave
360 A
I2t (Non-Repetitive) I2t 660 A2s
Junction temperature Tj
Inverter, Brake 175
˚C
Converter 150
Operating junciton temperature
(under switching conditions) Tjop
Inverter, Brake 150
Converter 150
Case temperature TC125
Storage temperature Tstg -40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M4 1.7 Nm
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NOVEMBER 2013
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7MBR30VKC060-50
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IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 600V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 30mA 6.2 6.7 7.2 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 30A
Tj=25°C - 1.95 2.35
V
Tj=125°C - 2.30 -
Tj=150°C - 2.40 -
VCE (sat)
(chip)
VGE = 15V
IC = 30A
Tj=25°C - 1.70 2.10
Tj=125°C - 2.05 -
Tj=150°C - 2.15 -
Internal gate resistance Rg(int) -- 0 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 1.6 - nF
Turn-on time
ton
VCC = 300V
IC = 30A
VGE = +15 / -15V
RG = 15Ω
- 0.08 1.20
μs
tr - 0.06 0.60
tr (i) - 0.02 -
Turn-off time toff - 0.14 1.20
tf - 0.02 0.45
Forward on voltage
VF
(terminal) IF = 30A
Tj=25°C - 2.25 2.65
V
Tj=125°C - 2.30 -
Tj=150°C - 2.30 -
VF
(chip) IF = 30A
Tj=25°C - 2.00 2.40
Tj=125°C - 2.05 -
Tj=150°C - 2.05 -
Reverse recovery time trr IF = 30A - - 0.35 μs
Brake
Zero gate voltage collector current ICES VGE = 0V
VCE = 600V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V
VGE = +20 / -20V - - 200 nA
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 30A
Tj=25°C - 1.95 2.35
V
Tj=125°C - 2.30 -
Tj=150°C - 2.40 -
VCE (sat)
(chip)
VGE = 15V
IC = 30A
Tj=25°C - 1.70 2.10
Tj=125°C - 2.05 -
Tj=150°C - 2.15 -
Internal gate resistance Rg(int) - - 0 - Ω
Turn-on time ton VCE = 300V
IC = 30A
VGE = +15 / -15V
RG = 15Ω
- 0.08 1.20
μs
tr - 0.06 0.60
Turn-off time toff - 0.14 1.20
tf - 0.02 0.45
Reverse current IRRM VR = 600V - - 1.00 mA
Converter
Forward on voltage VFM IF = 30A terminal - 1.40 1.85 V
chip - 1.15 -
Reverse current IRRM VR = 800V - - 1.0 mA
Thermistor
Resistance RT = 25°C - 5000 - Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 1.24
˚C/W
Inverter FWD - - 1.78
Brake IGBT - - 1.24
Converter Diode - - 1.35
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
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IGBT Modules
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7MBR30VKC060-50
Characteristics (Representative)
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V， Ic=30A，Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Tj= 25oC / chip
Collector current: IC [A]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25oC
Collector - Emitter voltage: VCE [V]
Gate - Emitter voltage: VGE [V]
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage: VCE[V]
Collector current: IC [A]
[ Inverter ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
0
10
20
30
40
50
60
012345
15V
12V
10V
8V
VGE=20V
0
10
20
30
40
50
60
012345
Tj=125oC
Tj=25oC
0
2
4
6
8
5 10 15 20 25
Ic=60A
Ic=30A
Ic=15
A
0.01
0.10
1.00
10.00
0 10 20 30
Cies
Cres
Coes
0030003-
VGE
VCE
Tj=150oC
0
0
10
20
30
40
50
60
0 1 2 3 4 5
15V
12V
10V
8V
VGE=20V
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IGBT Modules
(Main terminals)
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V，VGE=±15V，Rg=15Ω，Tj= 125°C
[ Inverter ]
Vcc=300V，VGE=±15V，Rg=15Ω，Tj= 150°C
Switching time vs. Collector current (typ.)
Collector current: IC [A]
Vcc=300V，Ic=30A，VGE=±15V，Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current: IC [A]
Switching time vs. gate resistance (typ.)
Gate resistance : Rg [Ω]
Switching time : ton, tr, toff, tf [ nsec ]Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector-Emitter voltage : VCE [V]
Vcc=300V，Ic=30A，VGE=±15V
Gate resistance : Rg [Ω]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector current: IC [A]
[ Inverter ]
Vcc=300V，VGE=±15V，Rg=15Ω
Switching loss vs. Collector current (typ.)
Collector current: IC [A]
Switching loss vs. gate resistance (typ.)
[ Inverter ]
Reverse bias safe operating area (max.)
[ Inverter ]
+VGE=15,-VGE <= 15V, RG >= 15Ω ,Tj = 150°C
10
100
1000
0 25 50 75
toff
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1 10 100 1000
0.0
0.5
1.0
1.5
0 20 40 60 80
0
15
30
45
60
75
0 200 400 600 800
RBSOA
(Repetitive pulse)
10
100
1000
0 25 50 75
toff
ton
tr
tf
ton
tr
tf
Err(125oC)
Eoff
(
150oC
)
Eon(125oC)
Eon(150
o
C
)
Eoff
(
125oC
Err
(
150oC
10
100
1000
1 10 100 1000
tr
tf
toff
ton
Eoff(125oC)
Eon(125oC)
Eon(150oC)
Err(150oC)
Eoff(150oC)
Err(125oC)
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IGBT Modules
http://www.fujielectric.com/products/semiconductor/
7MBR30VKC060-50
[ Inverter ]
Vcc=300V，VGE=±15V，Rg=15Ω
Reverse recovery characteristics (typ.)
Forward current : IF [A]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [A]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Forward on voltage : VFM [V]
[ Converter ]
chip
Forward current vs. forward on voltage (typ.)
Forward current : IF [A]
Forward on voltage : VF [V]
Thermal resistanse : Rth(j-c) [ °C/W ]
Temperature [°C ]Pulse width : Pw [sec]
Resistance : R [kΩ]
Temperature characteristic (typ.)
] rotsimrehT [).xam( ecnatsiser lamreht tneisnarT
1
10
100
0 25 50 75
trr(150oC)
0
10
20
30
40
50
60
0 1 2 3 4
Tj=125oC
Tj=25oC
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0
Tj=125oCTj=25oC
0.01
0.10
1.00
10.00
0.001 0.010 0.100 1.000
FWD[Inverter]
Conv. Diode
IGBT[Inverter, Brake]
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Tj
=
15
0
o
C
trr(125oC)
Irr(150oC)
Irr(125oC)
n
1234
[sec]
0.0001 0.0021 0.0133 0.1247
IGBT
0.07978 0.12429 0.89819 0.13615
[°C/W] FWD
0.11457 0.17848 1.28984 0.19552
B-IGBT
0.07978 0.12429 0.89819 0.13615
Conv
0.08720 0.13585 0.98174 0.14881
∑
=
−
−=
4
1
1∙
n
t
n
n
erZth
τ
τ
n
r
n
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IGBT Modules
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
Collector current: IC [A]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
[ Brake ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current: IC [A]
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25oC
[ Brake ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [V]
[ Brake ]
Collector - Emitter voltage: VCE [V]
[ Brake ]
Dynamic gate charge (typ.)
Vcc=300V， Ic=30A，Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
Gate - Emitter voltage: VGE [V]
0.00
10.00
20.00
30.00
40.00
50.00
60.00
012345
VGE=20V 15V
12V
10V
8V
0.00
10.00
20.00
30.00
40.00
50.00
60.00
012345
15V
12V
10V
8V
VGE=20V
0
10
20
30
40
50
60
012345
Tj=125oC
Tj=25oC
0
2
4
6
8
5 10 15 20 25
Ic=60A
Ic=30A
Ic=15
A
0.01
0.10
1.00
10.00
0 10 20 30
Cies
Cres
Coes
0030003-
VGE
VCE
Tj=150oC
0
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IGBT Modules
http://www.fujielectric.com/products/semiconductor/
7MBR30VKC060-50
Outline drawing (Unit : mm)
Weight: 25g(typ.)
[ Thermistor ][ Converter ] [ Brake] [ Inverter ]
Equivalent circuit
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IGBT Modules
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of November 2013.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment
from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, ame
retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) •
Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set
forth herein.
WARNING