= SOLID STATE INC. a 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com NPN SILICON POWER TRANSISTOR ...2N3441 transistor is designed for use in general purpose NPN switching and linear amplifier application requiring high 2N3441 breakdown voltages. FEATURES * Driver for High Power Outputs * Series and Shunt Regulators , Solenoid and Relay Drivers 3 AMPERE Power Switching Circuits SILICON POWER TRANSISTORS 140 VOLTS MAXIMUM RATINGS 25 WATTS | Characteristic Symbol Rating Unit Collector-Base Voltage Vepo 160 V Collector-Emitter Voltage Voeo 140 Vv Emitter-Base Voltage Vepo 7.0 Vv Collector Current - Continuous le 3.0 A Base Current-Continuous lp 2.0 A B Total PowerDissipation@T,=25C Pp 25 w ' -l Derate above 25C 0.142 wrc ofr = { Operating and Storage Junction Ty Tst C H Temperature Range -65 to +200 J 2 Tk THERMAL CHARACTERISTICS wy 9) aye Characteristic Symbol Max Unit A Thermal Resistance Junction to Case; = Rejc 7.0 CAW PIN 1.BASE 2.EMINTER COLLECTOR(CASE) FIGURE -1 POWER DERATING MILLIMETERS 30 : DIM MIN MAX E 25 A | 30.60 | 3252 $ B 13.85 | 14.16 Z 20 MS c 6.54 7.22 2 Ns bp | 950 | 1050 & 45 PN E | 17.26 | 18.46 8 NQ F 0.76 | 092 x 10 L G 133 | 16 3 NN H 24.16 | 24.78 3 5 ( 13.84 | 15.60 3 Ss J 3.32 | 3.92 a 0 K 486 5.34 0 3 Ss 7 100 12 150 17% 200 To . TEMPERATURE(C) 2N3441 NPN ELECTRICAL CHARACTERISTICS ( T,, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) Vv Vv (Ip= 50 mA, p= 0) CEO (sus) 140 Collector Cutoff Current lcEo mA (Vog= 140 V, I= 0) 50 Collector Cutoff Current loex mA (Veg= 140 V, Vegtom= 1-5 V ) 5.0 Emitter Cutoff Current lego mA (Vep= 7.0 V, p= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig= 0.5 A, Vog=4.0 V ) 25 100 (Ie= 2.7 A, Vog=4.0 V ) 5.0 Collector-Emitter Saturation Voltage Voetsat) Vv (Ip= 2.7 A, p=0.9 A) 6.0 Base-Emitter On Voltage Veejon) Vv (Ig= 2.7 A, Vop=4.0 V ) 6.7 DYNAMIC CHARACTERISTICS Smail-Signal Current Gain Nee (Ig= 0.5 A, Vog= 4.0 V, f = 1.0 KHz) 15 Smail-Signat Current Gain | ye | (Ig= 0.5 A, Vop= 4.0 V, f = 0.4 MHz ) 5.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% ACTIVE REGION SAFE OPERATING AREA (SOA) igimax{Pulsed) 1s 500ms SOms 2ms ims S00us 100us 8 2 ~ 30us E 4 2 3 t t max (Continuous) 2 2 we g a o 64 So Fos 4 4 04 Oo - Bondng Wire Umi agl. Thermally Limted T.=25C -Second Breakdown Link 04 2 5 7 10 20 40 60 100 140 200 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate = Ic-Vce limits of the transistor that must be observed for reliable operation |.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typq=200 C; Tc Is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Tpq$200C, At high case temperatures, thermal limita- tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown.