2N7002W-G (N-Channel)
RoHS Device
MOSFETMOSFET
QW-BTR25 Page 1
REV:A
Features
-High density cell design for low RDS(ON).
-Voltage control small signal switch.
-Rugged and reliable.
-High saturation current capability.
Marking: K72
Equivalent Circuit
Dimensions in inches and (millimeter)
SOT-323
0.056(1.40)
0.047(1.20)
0.054(1.35)
0.045(1.15)
0.087(2.20)
0.070(1.80)
0.004(0.10)max
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
0.004(0.10)min
0.006(0.15)
0.002(0.05)
0.087(2.20)
0.078(2.00)
G S
D
G : Gate
S : Source
D : Drain
DD
GG
SS
O
Electrical Ratings (at TA=25 C unless otherwise noted)
Symbol
Parameter Unit
Value
Drain-Source voltage
Drain current
Power dissipation
Junction and storage temperature range
VDS
ID
PD
TJ, TSTG
60
115
225
-55 to +150
V
mA
mW
OC
Symbol
Parameter Conditions Typ
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
VBR(DSS)
Vth(GS)
IGSS
IDSS
ID(ON)
rDS(ON)
gfs
VDS(ON)
VSD
Ciss
Coss
Crss
td(on)
td(off)
VGS=0V, ID=10μA
VGS=0V, ID=3mA
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=60V, VGS=0V
VGS=10V, VDS=7V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS=10V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0V
VDS=25V, VGS=0V, f=1MHz
VDD=25V, RL=50Ω, ID=500mA,
VGEN=10V, RG=25Ω
Min
Drain-Source breakdown voltage
Gate-Threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-Source on resistance
Forward trans conductance
Drain-source on-voltage
Diode forward voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
60
60
1
500
80
V
V
2.5
±100
1
7.5
7.5
3.75
0.375
1.2
50
25
5
20
40
V
V
nA
μA
mA
Ω
mS
V
V
pF
nS
SMD Diodes Specialist
COMCHIP
RATING AND CHARACTERISTIC CURVES (2N7002W-G)
MOSFETMOSFET
Page 2
QW-BTR25
REV:A
Fig.1 On-Region Characteristics
0
ID, Drain-Source Current (A)
VDS, Drain-Source Voltage(V)
0 2 5
0.8
Fig.2 On-Resistance vs Drain Current
0
RDS(ON), Normalized
Drain-Source On-Resistance
ID, Drain Current (A)
0 0.2 0.8 1.0
1
2
3
Fig.3 On-Resistance vs Junction Temperature
0
RDS(ON), Normalized Drain-Source
On-Resistance
O
TJ, Junction Temperature ( C)
-55
0.5
2.0
20
1 3 0.4
4
5
VGS = 5.0V
O
T = 25 C
J
VGS = 10V
ID= 50mA
ID= 500mA
VGS=10V
9.0V
8.0V
7.0V
6.5V
6.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
5.5V
5.0V
4
0.2
0.4
0.6
1.0
0.6
6
7
Fig.4 On-Resistance vs Gate-Source Voltage
0
RDS(ON), Normalized
Drain-Source On-Resistance
VGS, Gate to Source Voltage (V)
0 4 14 18
1
2
3
8
4
5
12
6
2 166 10
-30 -5 45 120
70 95 145
1.0
1.5
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
SMD Diodes Specialist
COMCHIP
