DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING * High current (max. 1 A) PIN * Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter * Audio and video amplifiers. DESCRIPTION handbook, halfpage1 PNP medium power transistor in a TO-92; SOT54 plastic package. NPN complements: BC635, BC637 and BC639. 2 2 3 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC636 - -45 V BC638 - -60 V BC640 - -100 V BC636 - -45 V BC638 - -60 V BC640 - -80 V collector-emitter voltage open base VEBO emitter-base voltage - -5 V IC collector current (DC) - -1 A ICM peak collector current - -1.5 A IBM peak base current Ptot total power dissipation Tstg open collector - -200 mA - 0.83 W storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Oct 10 2 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 150 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MAX. UNIT IE = 0; VCB = -30 V - -100 nA IE = 0; VCB = -30 V; Tj = 150 C - -10 A - -100 nA IC = -5 mA 63 - IC = -150 mA 63 250 IC = -500 mA 40 - 63 160 IEBO emitter cut-off current IC = 0; VEB = -5 V hFE DC current gain VCE = -2 V; see Fig.2 DC current gain MIN. IC = -150 mA; VCE = -2 V; see Fig.2 BC636-10 100 250 VCEsat collector-emitter saturation voltage BC636-16; BC638-16; BC640-16 IC = -500 mA; IB = -50 mA - -0.5 V VBE base-emitter voltage IC = -500 mA; VCE = -2 V - -1 V fT transition frequency IC = -50 mA; VCE = -5 V; f = 100 MHz 100 - MHz h FE1 ----------h FE2 DC current gain ratio of the complementary pairs IC = 150 mA; VCE = 2 V 1.6 2001 Oct 10 3 - Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 MBH730 160 handbook, full pagewidth VCE = -2 V hFE 120 80 40 0 -10-1 -1 -10 -102 Fig.2 DC current gain; typical values. 2001 Oct 10 4 -103 IC (mA) -104 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2001 Oct 10 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Oct 10 6 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 NOTES 2001 Oct 10 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA73 (c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08739