PD- 91899B IRF3515S IRF3515L SMPS MOSFET HEXFET(R) Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS RDS(on) max ID 0.045 41A 150V Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) l D2 Pak IRF3515S TO-262 IRF3515L Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 41 29 164 200 1.3 30 4.3 -55 to + 175 Units A W W/C V V/ns C 300 (1.6mm from case ) Applicable Off Line SMPS Topologies l Telcom 48V input DC/DC Active Clamp Reset Forward Converter Notes through are on page 10 www.irf.com 1 10/28/99 http://store.iiic.cc/ IRF3515S/L Static @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS V(BR)DSS/TJ Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.21 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 10V, ID = 25A 4.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 15 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 17 120 34 63 2260 530 170 3330 230 280 Max. Units Conditions --- S VDS = 50V, ID = 25A 107 ID = 25A 23 nC VDS = 120V 65 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 25A ns --- RG = 2.5 --- RD = 3.0,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 670 25 20 mJ A mJ Typ. Max. Units --- --- 0.75 40 C/W Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 41 --- --- showing the A G integral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com http://store.iiic.cc/ IRF3515S/L 1000 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 1 5.0V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 10 5.0V 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 100 TJ = 175 C 10 TJ = 25 C V DS = 50V 20s PULSE WIDTH 6 8 10 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 4 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TJ = 175 C 1 0.1 12 14 ID = 41A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRF3515S/L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss VGS , Gate-to-Source Voltage (V) 20 100000 10 VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 100 1 ID = 25A FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 C 10us 100 10 TJ = 25 C 100us 1ms 10 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1 1.8 1 VSD ,Source-to-Drain Voltage (V) 10ms TC = 25 C TJ = 175 C Single Pulse 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRF3515S/L 50 VGS 40 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 30 10V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 0.20 0.1 0.10 Thermal Response 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 http://store.iiic.cc/ IRF3515S/L D R IV E R L VDS D .U .T RG + V - DD IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1600 1 5V TOP BOTTOM ID 10A 17A 25A 1200 A 800 400 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com http://store.iiic.cc/ IRF3515S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETS www.irf.com 7 http://store.iiic.cc/ IRF3515S/L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 10 .1 6 (.4 00 ) R E F. -B- 4 .6 9 (.18 5) 4 .2 0 (.16 5) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 1 5.49 (.6 10) 1 4.73 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5.28 (.2 08 ) 4.78 (.1 88 ) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.55 (.0 22) 0.46 (.0 18) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A PART NUM BER F530S 9 24 6 9B 1M A S S E M B LY LO T C O D E 8 DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.irf.com http://store.iiic.cc/ IRF3515S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 9 http://store.iiic.cc/ IRF3515S/L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 .6 0 (.06 3) 1 .5 0 (.05 9) 4.1 0 (.16 1 ) 3.9 0 (.15 3 ) F EE D D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 1.60 (.45 7) 1 1.40 (.44 9) 1 .6 5 (.0 6 5 ) 0 .3 68 (.0 14 5) 0 .3 42 (.0 13 5) 24.30 (.95 7) 23.90 (.94 1) 1 5.42 (.6 09) 1 5.22 (.6 01) TR L 1 .7 5 (.069 ) 1 .2 5 (.049 ) 10.90 (.42 9) 10.70 (.42 1) 4.7 2 (.13 6) 4.5 2 (.17 8) 1 6.10 (.6 34 ) 1 5.90 (.6 26 ) F E ED D IRE C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M AX. 60.00 (2.362) M IN. NO TES : 1. CO MF OR MS TO EIA-418. 2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER . 3. DIM ENS ION M EASUR ED @ HU B. 4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E. 30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961) 4 3 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 2.2mH RG = 25, IAS = 25A. (See Figure 12) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 5.0A, di/dt 330A/s, VDD V(BR)DSS, TJ 175C * When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 10/99 10 www.irf.com http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/