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Transistor
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO : 60V
Collector-Emitter Voltage, VCEO : 60V
Emitter-Base Voltage, VEBO : 6V
Continuous Collector Current, IC : 30mA
Total Device Dissipation (TA = +25°C), PD : 500mW
Derate above 25°C : >3.33mW/°C
Total Device Dissipation (TC = +25°C), PD : 1.8W
Derate above 25°C : 12mW/°C
Operating Junction Temperature Range, TJ : -65°C to +200°C
Storage Temperature Range, Tstg : -65°C to +200°C
Collector-Emitter Breakdown Voltage V(br)ceo Ic = 10mA, Ib = 0, Note 1 45 -
V
Collector-Base Breakdown Voltage V(br)cbo Ic = 10μA, Ie = 0 80 -
Emitter-Base Breakdown Voltage V(br)ebo Ie = 10μA, Ic = 0 6 -
Collector Cut-off Current Icbo Vcb = 45V, Ie = 0 - 2 nA
Emitter Cut-Off Current Iebo Veb = 5V, Ic = 0 - 2
Parameter Symbol Test Conditions Min. Max. Unit
OFF Characteristics
Electrical Characteristics: (TA = +25°C unless otherwise specied)
Note 1. Pulse Test: Pulse Width <
= 300μs, Duty Cycle <
= 2%.
Description:
A Widely used “Industry Standard” silicon NPN transistor in a TO-18 type case designed for
applications such as medium-speed switching and ampliers from audio to VHF frequencies.
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Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Current Gain-Bandwidth Product ftVce = 5V, Ic = 0.5mA, f = 30MHz,
Note 2 45 - MHz
Output Capacitance Cobo Vcb = 5V, Ie = 0, f = 1MHz - 6 pF
Noise Figure NFVce = 5V, Ic = 10μA, f = 1kHz,
Rs = 10kΩ - 3 dB
Small-Signal Characteristics
Parameter Symbol Test Conditions Min. Max. Unit
1. EMITTER
2. BASE
3. COLLECTOR
Description Part Number
Bipolar Transistor, NPN, 60V, TO-18 2N930A
Part Number Table
Dimensions : Millimetres
Dim. Min. Max.
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.4 0.53
E - 0.76
F- 1.27
G- 2.97
H0.91 1.17
J 0.71 1.21
K 12.7 -
L 45° 45°
Electrical Characteristics: (TA = +25°C unless otherwise specied)
DC Current Gain hFE VCE = 5V, IC = 0.001mA, Note 1 60 - -
VCE = 5V, IC = 0.01mA 100 300 -
Vce = 5V, Ic = 10mA, Note 1 - 600 -
Collector-Emitter Saturation Voltage VCE(sat) Ic = 10mA, Ib = 0.5mA, Note 1 - 0.5
V
Base-Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 0.5mA, Note 1 0.7 0.9
ON Characteristics
Note 1. Pulse Test: Pulse Width <
= 300μs, Duty Cycle <
= 2%.
Note 2. fT is dened as the frequency at which |hfe| extrapolates to unity.
