© 2016 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 100 A
IDM TC= 25C, Pulse Width Limited by TJM 200 A
IATC= 25C15A
EAS TC= 25C 3.5 J
PDTC= 25C 1040 W
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 650 V
VGS(th) VDS = VGS, ID = 4mA 3.5 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS= 0V 50 A
TJ = 125C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 30 m
IXFK100N65X2
IXFX100N65X2
VDSS = 650V
ID25 = 100A
RDS(on)
30m
DS100684C(12/16)
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
GDS
TO-264 (IXFK)
S
G
DTab
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
X2-Class HiPerFETTM
Power MOSFET
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK100N65X2
IXFX100N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 100 A
ISM Repetitive, Pulse Width Limited by TJM 400 A
VSD IF = IS , VGS = 0V, Note 1 1.4 V
trr 200 ns
QRM 1.7 μC
IRM 17.2 A
IF = 50A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 40 68 S
RGi Gate Input Resistance 0.7
Ciss 10.8 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 6000 pF
Crss 2.6 pF
Co(er) 365 pF
Co(tr) 1500 pF
td(on) 37 ns
tr 26 ns
td(off) 90 ns
tf 13 ns
Qg(on) 183 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 nC
Qgd 62 nC
RthJC 0.12C/W
RthCS 0.15C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
Terminals: 1 - Gate
2,4 - Drain
3 - Source
PLUS247TM Outline
TO-264 Outline
Terminals: 1 = Gate
2,4 = Drain
3 = Source
b
Q
D
R
EA
S
R1
x2 b2
b1 A1
L1
31 2
L
c
e
40P
e
Q1
1 2 3 4
b
C
L
D
R
Q
E
A
A1
L1
D2
D1
E1
A2
b2 2 PLCS
3 PLCS 2 PLCS
b4
BACK SIDE
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK100N65X2
IXFX100N65X2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
00.511.522.533.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V 7V
6V
5V
4V
Fig. 4. R
DS(on)
No rmalized to I
D
= 50A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 50A
I
D
= 10 0A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig . 5 . R
DS(on)
No rma lized to I
D
= 50A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 20 40 60 80 100 120 140 160 180 200 220 240
I
D
- Amperes
R
DS(on)
- Normalized
VGS
= 10V
TJ = 125ºC
TJ = 25ºC
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- D egrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BVDSS
VGS(th)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK100N65X2
IXFX100N65X2
Fig. 8. Input Admittance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Am peres
TJ
= 125ºC
25ºC
- 40ºC
Fig. 7. Maximum Drain Current v s. Case Temperature
0
10
20
30
40
50
60
70
80
90
100
110
-50 -25 0 25 50 75 100 125 150
T
C
- Degr ees Cen tigrade
I
D
- Am peres
Fig. 9. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
I
D
- Am peres
g
f s
- Si em ens
TJ
= - 40ºC
125ºC
25ºC
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
TJ
= 125ºC
TJ = 25ºC
Fig. 11. Gate Charge
0
2
4
6
8
10
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
V
GS
- Volts
VDS
= 325V
I D = 50A
I G = 10m A
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1000
VDS - Volts
Capacitan ce - PicoFara d
s
f
= 1 MHz
Ciss
Crss
Coss
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK100N65X2
IXFX100N65X2
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Secon ds
Z
(th)JC
- K / W
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Singl e Pulse
25µs
100µs
R
DS(
on
)
Limit
1ms
10ms
Fig. 13. Output Capacitance Store d Energy
0
10
20
30
40
50
60
70
80
90
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
IXYS REF: F_100N65X2(X8-S602) 12-14-15