NOTES : 1. 300us Puls e W idth, 2% Duty Cycle
2. Measured at 1.0MHz and applied reverse voltage of 4 .0V DC.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MBRB1530CT thru 1545CT
FEA T URES
Metal of silicon rectifi er,majority carri er conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
wh elling,and polarity protection applications
ME CHANICAL DATA
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive load, dera te c u rr e n t b y 20%
MBRB1530CT
30
21
30
Maximum Av erage Forward
Rectified Current (See Fig.1)
@T
C
=
105 C
Peak Forward Surge Current
8.3ms si ngl e ha lf sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurren t Peak R everse V oltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage at (Note 1)
15
150
-
0.57
0.84
0.72
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +175 C
Typical Thermal
Resistance
R
0JA
2.0
C/W
T
J
=25 C
C
J
Typical Junction Capacitance per element
(Note 2)
300
pF
I
R
@T
J
=100 C
Maximum DC Reve rse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.1
15
mA
V
A
A
V
UNIT
V
V
2
CHARACTERISTICS SYMBOL
Voltage Rate of Change (Rated VR)
T
J
=125 C
Junction to Case
Junction to Ambient
R
0JC
dv/dt
MBRB1535CT
35
24.5
35
MBRB1540CT
40
28
40
MBRB1545CT
45
31.5
45
10000
50
V/us
C/W
D PAK
2
All Dimensions in millim et er
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 9.65 10.69
15.8814.60
8.25 9.25
1.4 01.14
0.51 1.14
2.29 2.7 9
2.29 2.79
1.14 2.9 2
K
J
I 1.4 0
2.03
0.6 40.30
4.37 4.83
D PAK
2
K
J
I
H
F
D
C
A
G
E
B
PIN 1
PIN 2 K
HEATSINK
12
K
K
SCHOTTKY BAR RIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
45
Volts
FOR WARD CURRENT
- 15
Amperes
I
F
=7.5A @
I
F
=7.5A @
I
F
=15A @
I
F
=15A @ T
J
=25 C
T
J
=125 C
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KTHB03
RATING AND CHARACTERISTIC CURVES
MBRB15 30 CT thru MBRB1545CT
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
1.0
10
100
0.6 0.8 1.0
0.1 1.8
1.6
TJ= 25 C
PERCENT OF TRATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
.001
0.1
1.0
100
10
60 80 100
TJ= 100 C
.01
TJ= 25 C
PULSE WIDTH 300us
2% Duty Cycle
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
1000
100
10 TJ= 25 C, f= 1MHz
0.1 4
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUM BER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
50
100
150
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
10
050
5
15
175
RESISTIVE OR
INDUCTIV E LOAD
CASE TEMPERATURE , C
REV. 2, 01-Dec-2000, KTHB03
