Continental Device India Limited Data Sheet Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values BC846 BC847 BC848
Collector–base voltage (open emitter) VCBO max. 80 50 30 V
Collector–emitter voltage (VBE =
0) VCES max. 80 50 30 V
Collector–emitter voltage (open base) VCEO max. 65 45 30 V
Emitter–base voltage (open collector) VEBO max. 6 6 5 V
Collector current (d.c.) ICmax. 100 mA
Collector current (peak value) ICM max. 200 mA
Emitter current (peak value) –IEM max. 200 mA
Base current (peak value) IBM max. 200 mA
Total power dissipation*
up to Tamb: 25 °C Ptot max. 250 mW
Storage temperature Tstg –55 to + 150 ° C
Junction temperature Tjmax. 150 ° C
THERMAL RESISTANCE
From junction to ambient Rth j–a = 500
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 30 V ICBO <15nA
IE = 0; VCB = 30 V; Tj = 150 °C ICBO <5mA
Base–emitter voltage
IC = 2 mA; VCE = 5 V VBE typ. 660 mV
580 to 700 mV
IC = 10 mA; VCE = 5 V VBE < 770 mV
Saturation voltage
IC = 10 mA; IB = 0,5 mA VCEsat typ. 90 mV
< 250 mV
VBEsat typ. 700 mV
IC = 100 mA; IB = 5 mA VCEsat typ. 200 mV
< 600 mV
VBEsat typ. 900 mV
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10 V Cctyp. 2,5 pF
Transition frequency at f = 100 MHz
IC = 10 mA; VCE = 5 V fT> 100
MHz
Noise figure at RS = 2 KW
Ic = 200 mA; VCE = 5 V;
f = 1 kHz; B = 200 Hz typ. 2 dB
F< 10dB
BC846 BC847
BC848