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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
Rev. A
NPN General Purpose Amplifier
June 2007
BSR17A
NPN General Purpose Amplifier
SOT-23
MARK: U92
Features
This device is designed as a general purpose am plifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Proc ess 23.
Absolute Maximum Ratings *Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or lo w duty cycle operatio ns.
Thermal Characteristics *Ta = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current (DC) 200 mA
TJJunction Temperature -55 ~ +150 °C
TSTG Storage Temperature -55 ~ +150 °C
Symbol Characteristic Max Units
PDTotal Device Dissipation
Derate above 25℃
350
2.8
mW
mW/℃
RθJA Thermal Resistance, Junction to Ambient 357 ℃/W
C
B E
2www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Electrical Characteristics *Ta = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Symbol Parameter Test Condition MIN MAX Units
V(BR)CEO Collector-Emitte r Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IB = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V, TA = 150°C5.0 µA
ICEX Emitter-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA
IBEX IBEX Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE(sat)Collector-Emitter Saturation Voltage *IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5. 0 mA 0.2
0.3 V
V
VBE(sat)Emitter-Base Breakdown Voltage * IC = 10 mA, IB = 1. 0 mA
IC = 50 mA, IB = 5. 0 mA 0.65 0.85
0.95 V
V
fTTransition Frequency IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz
Ccb Collector-Base Capacitance VCB = 0.5 V, IE = 0, f = 1.0 MHz 4.0 pF
Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40 µS
td Delay Time IC = 10 mA, I B1 = 1.0 mA,VEB= 0.5 V 35 ns
trRise Time 4.0 pF
tsStorage Time IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns
tfFall Time 50 ns
3www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Typical Performance Characteristics
4www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Typical Performance Characteristics (continued)
5www.fairchildsemi.com
BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
Typical Performance Characteristics (continued)
Test Circuits
tm
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The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
BSR17A NPN General Purpose Amplifier
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
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CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
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As used herein:
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intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to caus e the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contai ns the design specificatio ns for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a later dat e.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet contains final specifications. Fa irchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to improv e design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Rev. I23
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BSR17A Rev. A
BSR17A NPN General Purpose Amplifier
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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