BC846W ... BC849W BC846W ... BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage NPN NPN Version 2011-07-07 2 0.1 0.3 1 0.1 Type Code 1 1.250.1 2.10.1 3 2 1.3 Dimensions - Mae [mm] 1=B 2=E 3=C Power dissipation - Verlustleistung 200 mW Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC846W BC847W BC848W BC849W Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 30 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 80 V 50 V 30 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V 5V 1 Power dissipation - Verlustleistung Ptot 200 mW ) Collector current - Kollektorstrom (dc) IC 100 mA Peak Collector current - Kollektor-Spitzenstrom ICM 200 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA - IEM 200 mA Tj TS -55...+150C -55...+150C Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 10 A Group A Group B Group C hFE hFE hFE - - - 90 150 270 - - - VCE = 5 V, IC = 2 mA Group A Group B Group C hFE hFE hFE 110 200 420 180 290 520 220 450 800 - - 90 mV 200 mV 250 mV 600 mV Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 VCEsat VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC846W ... BC849W Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. VBEsat VBEsat - - 700 mV 900 mV - - VBE VBE 580 mV - 660 mV - 700 mV 720 mV ICBO ICBO - - - - 15 nA 5 A IEBO - - 100 nA fT 100 MHz - - CCBO - 3.5 pF 6 pF CEBO - 9 pF - F F - - 2 dB 1.2 dB 10 dB 4 dB Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz BC846W ... BC848W BC849W Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstarkungsgruppen pro Typ 2 1 2 < 620 K/W 1) BC856W ... BC859W BC846AW = 1A BC847AW = 1E BC848AW = 1J BC846BW = 1B BC847BW = 1F BC848BW = 1K BC849BW = 2B BC847CW = 1G BC848CW = 1L BC849CW = 2C Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG