BC846W ... BC849W
BC846W ... BC849W
NPN Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN
Version 2011-07-07
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC846W BC847W BC848W
BC849W
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 30 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 80 V 50 V 30 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V 5 V
Power dissipation – Verlustleistung Ptot 200 mW 1)
Collector current – Kollektorstrom (dc) IC100 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 µA Group A
Group B
Group C
hFE
hFE
hFE
–
–
–
90
150
270
–
–
–
VCE = 5 V, IC = 2 mA Group A
Group B
Group C
hFE
hFE
hFE
110
200
420
180
290
520
220
450
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
90 mV
200 mV
250 mV
600 mV
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
1.3
0.3
1.25
±0.1
1
±0.1
2
±0.1
2.1
±0.1
Type
Code
3
21
BC846W ... BC849W
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
ICBO
ICBO
–
–
–
–
15 nA
5 µA
Emitter-Base cutoff current
VEB = 5 V, (C open) IEBO – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – 9 pF –
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC846W ... BC848W
BC849W
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 620 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BC856W ... BC859W
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungs-
gruppen pro Typ
BC846AW = 1A
BC847AW = 1E
BC848AW = 1J
BC846BW = 1B
BC847BW = 1F
BC848BW = 1K
BC849BW = 2B
BC847CW = 1G
BC848CW = 1L
BC849CW = 2C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
