SOT-23 Plastic-Encapsulate Transistors ii. BC807-16/25/40LT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR 3 7 FEATURES Poem: 0.3W CTamb=25T > Icm: -0.5A Viarycao:-50V eeng a age junction temperature range Ta, Tstg :-55C to+150T UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C_ unless otherwise specified) Coliector-base breakdown voltage V(BR)CBO Ic= -10mA, le=0 -50 Vv Collector-emitter breakdown voltage V(BR)CEO Ic= -10mA, Ip=0 -45 Vv Emitter-base breakdown voltage V(BR)EBO le=-1nh A, lB=0 -5 Vv Collector cut-off current Icso Vcs=-45V,le=0 -0.1 nA Collector cut-off current IcEO Vce=-40V,IB=0 . -0.2 nA Emitter cut-off current leBo VeB=-4V, Ic=0 -0.1 HA BC807-16 hFE(1) Voe=-1V, 1o=-100mA 188 499 DC current gain BC807-25 BC807-40 hFE(2) Vce=-1V, Ic=-500mA 40: Collector-emitter saturation voltage VcEsat ic=-500mA, |B=-50mA ; -0.7 Vv Base-emitter saturation voitage VBEsat ic=-500mA,IB=-50mA -1:2 Vv Transition frequency ft Vce=-5V,Ic=-10mA,f=100MHz 100 MHz DEVICE MARKING : BC807-16LT1=5A1;8C807-25=5B;BC807-40LT1=5C 205 Typical Characteristics hre- TYPICAL PULSED CURRENT GAIN Vassar - BASE-EMITTER VOLTAGE (V) fh Ss 8 8 a a 2 Qo =a + o @ fe.) o b = Typical Pulsed Current Gain vs Collector Current Voe= SV 0.1 tc COLLECTOR CURRENT (A) Base-Emitter Saturation Voltage vs Collector Current B=10 10 100 1, - COLLECTOR CURRENT (mA) 1000 BC807-16,25,40LT1 Collector-Emitter Saturation Voltage vs Collector Current Qo oa 6 =10 Qa on Qo & oa w oC NO Qo = 20 S O4 1 1.56 Ic- COLLECTOR CURRENT (A) Vcesat- COLLE CTOR-EMITTER VOLTAGE (V) Gain Bandwidth Product vs Collector Current Vce = 10V hre- GAIN BANDWIDTH PRODUCT (MHz) 4 10 100 1000 ice COLLECTOR CURRENT (mA) 206