2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC337
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : IC=800mA.
DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).
For Complementary with PNP type BC327.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=45V, IE=0 - - 100 nA
DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 16 - pF
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
2000. 2. 28 2/2
BC337
Revision No : 2
