2N7002
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ⎯ ⎯ 1.0
500 μA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.0 V VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.05A Static Drain-Source On-Resistance @ TJ = 25°C
@ Tj = 125°C RDS(ON) ⎯ 1.8
2.6 7.5
13.5 Ω VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 50 pF
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns
Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Notes: 3. Short duration pulse test used to minimize self-heating effect.
0
0.2
0.4
0.6
0.8
1.0
012 345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN -SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
,
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig . 2 On- Re sistance vs. D r ai n Curr ent
D
6
7
0.4 0.6 0.8 1.0
0.0
0.5
1.0
2.5
2.0
1.5
3.5
3.0
-55 -30 -5 20 45 70 95 120 145 170
,
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig . 3 On- Re sistance vs. Junction Temp er at ur e
J
°
0
V , GA T E TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 81012141618
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
2N7002W
Document number: DS30099 Rev. 14 - 2 2 of 3
www.diodes.com August 2008
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