2N7002
W
N-CHANNEL ENHAN CEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low-On Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-323
TOP VIEW E
q
uivalent Circuit
Source
Gate
Drain
GS
D
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V
Gain-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed ID 115
73
800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Derating above TA = 25°C PD 200
1.60 mW
mW
Thermal Resistance, Junction to Ambient RθJA 625 °C /W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
2N7002W
Document number: DS30099 Rev. 14 - 2 1 of 3
www.diodes.com August 2008
© Diodes Incorporated
2N7002
W
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ⎯ ⎯ 1.0
500 μA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.0 V VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.05A Static Drain-Source On-Resistance @ TJ = 25°C
@ Tj = 125°C RDS(ON) ⎯ 1.8
2.6 7.5
13.5 Ω VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 50 pF
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns
Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Notes: 3. Short duration pulse test used to minimize self-heating effect.
0
0.2
0.4
0.6
0.8
1.0
012 345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN -SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig . 2 On- Re sistance vs. D r ai n Curr ent
D
6
7
0.4 0.6 0.8 1.0
0.0
0.5
1.0
2.5
2.0
1.5
3.5
3.0
-55 -30 -5 20 45 70 95 120 145 170
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig . 3 On- Re sistance vs. Junction Temp er at ur e
J
°
0
V , GA T E TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 81012141618
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
2N7002W
Document number: DS30099 Rev. 14 - 2 2 of 3
www.diodes.com August 2008
© Diodes Incorporated
2N7002
W
Ordering Information (Notes 4)
Part Number Case Packaging
2N7002W-7-F SOT-323 3000/Tape & Reel
Notes: 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K72
YM
K72 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
2N7002W
Document number: DS30099 Rev. 14 - 2 3 of 3
www.diodes.com August 2008
© Diodes Incorporated
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
A
M
JL
DF
BC
H
K
G
TOP VIEW
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
X E
Y
C
Z
Dimensions Value (in mm)
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
