Type
BSS127
SIPMOS® Small-Signal-Transistor
Features
• n-channel
• enhancement mode
• Logic level (4.5V rated)
• dv/dt rated
• 100%lead-free; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 0.021 A
TA=70 °C 0.017
Pulsed drain current
ID,pulse TA=25 °C 0.09
Reverse diode dv/dtdv/dt
ID=0.021 A,
VDS=480 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±20 V
ESD class (JESD22-A114-HBM) 0 (<250)
Power dissipation
Ptot TA=25 °C 0.50 W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
VDS
600
V
RDS(on),max
500
W
0.021
A
Product Summary
PG-SOT-23
Type
Package
Pb-free
Halogen-free
Tape and Reel Information
Marking
BSS127
PG-SOT-23
Yes
Yes
H6327: 3000PCS/reel
SIs
Rev. 2.1 page 1 2016-02-10
BSS127
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
RthJA - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=250 µA 600 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=8 µA 1.4 2.0 2.6
Drain-source leakage current
ID (off)
VDS=600 V, VGS=0 V,
Tj=25 °C
- - 0.1 µA
VDS=600 V, VGS=0 V,
Tj=150 °C
- - 10
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V -10 100 nA
Drain-source on-state resistance
RDS(on)
VGS=4.5 V,
ID=0.016 A
-330 600 W
VGS=10 V, ID=0.016 A -310 500
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=0.01 A
0.007 0.015 - S
Values
Rev. 2.1 page 2 2016-02-10
BSS127
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -21 28 pF
Output capacitance
Coss -2.4 3
Reverse transfer capacitance
Crss -1.0 1.5
Turn-on delay time
td(on) -6.1 19.0 ns
Rise time
tr-9.7 14.5
Turn-off delay time
td(off) -14 21
Fall time
tf-115 170
Gate Charge Characteristics
Gate to source charge
Qgs -0.07 0.10 nC
Gate to drain charge
Qgd -0.31 0.5
Gate charge total
Qg-0.65 1.0
Gate plateau voltage
Vplateau -3.56 - V
Reverse Diode
Diode continous forward current IS- - 0.016 A
Diode pulse current
IS,pulse - - 0.09
Diode forward voltage
VSD
VGS=0 V, IF=0.016 A,
Tj=25 °C
-0.82 1.2 V
Reverse recovery time
trr -160 240 ns
Reverse recovery charge
Qrr -13.2 19.8 nC
VR=300 V,
IF=0.016 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=300 V,
VGS=10 V, ID=0.01 A,
RG,ext=6 W
VDD=300 V,
ID=0.01 A,
VGS=0 to 10 V
Rev. 2.1 page 3 2016-02-10
BSS127
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
100 101 102 103
10-4
10-3
10-2
10-1
ID [A]
VDS [V]
limited by on-state
resistance
100 ms
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100 101 102 103
10-1
100
101
102
103
ZthJA [K/W]
tp [s]
0
0.1
0.2
0.3
0.4
0.5
0.6
040 80 120 160
Ptot [W]
TA [°C]
0
0.005
0.01
0.015
0.02
0.025
0.03
040 80 120 160
ID [A]
TA [°C]
Rev. 2.1 page 4 2016-02-10
BSS127
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
0.005
0.01
0.015
0.02
0.025
0 1 2 3 4
ID [A]
VGS [V]
0
0.005
0.01
0.015
0.02
0.025
0.000 0.005 0.010 0.015 0.020
gfs [S]
ID [A]
2.6 V
3 V
3.2 V
3.6 V
3.8 V
4 V
5 V
10 V
0
0.005
0.01
0.015
0.02
0.025
0.03
0 2 4 6 8 10
ID [A]
VDS [V]
2.6 V
3 V
3.2 V
3.6 V 3.8 V
4 V
5 V
10 V
0
200
400
600
800
1000
0 0.005 0.01 0.015 0.02 0.025
RDS(on) [W]
ID [A]
Rev. 2.1 page 5 2016-02-10
BSS127
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.016 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=8 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
max
0
100
200
300
400
500
600
700
800
900
1000
-60 -20 20 60 100 140 180
RDS(on) [W]
Tj [°C]
Ciss
Coss
Crss
10-1
100
101
102
0 5 10 15 20 25
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
0 0.4 0.8 1.2 1.6 2 2.4 2.8
IF [A]
VSD [V]
max
typ
min
0
0.5
1
1.5
2
2.5
3
3.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Rev. 2.1 page 6 2016-02-10
BSS127
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS=f(Qgate); ID=0.01 A pulsed VBR(DSS)=f(Tj); ID=250 µA
parameter: VDD
15 Gate charge waveforms
500
520
540
560
580
600
620
640
660
680
700
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
120 V 300 V 480 V
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VGS [V]
Qgate [nC]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
Rev. 2.1 page 7 2016-02-10
BSS127
SOT-23
Package Outline:
Footprint: Packaging:
Rev. 2.1 page 8 2016-02-10
BSS127
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1 page 9 2016-02-10