S9014C-TS01
NPN Silicon
Transistors
TO-92
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.4Watts(Tamb=25O
C) of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking Code: S9014
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
50 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=0.1mAdc, IB=0)
45 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=50Vdc, IE=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=35Vdc, IB=0)
--- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(I
C=1.0mAdc, VCE=5.0Vdc)
300 400 ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=100mAdc, I
B=5.0mAdc)
--- 0.3 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=100mAdc, I
B=5.0mAdc)
--- 1.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I
C=10mAdc, VCE=5.0Vdc, f=30MHz)
150 --- MHz
E
B
C
AE
B
C
D
G
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 4 2008/02/01
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G.096 .1042.442.64
TM
Micro Commercial Components
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
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