GATE 18 BACKSIDE CONTACT 0.006 0.021 fo.Fa2 G83} ALL DIMENSIONS IN INCHES FALL DIMENSIONS IN MILLIMETERS) n-channel JFETs designed for = Analog Switches = Commutators =u Choppers Integrator Reset Switch TYPE PACKAGE Single TO-18 Dua! TO-71 Single TO-92 To-92 Lead-form Single Chip Dual Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristic Output Characteristic g ik z 4 c > 0 z af x a ( oa = 40 8 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics @ e z Zz g 120 2 oO 2 qt 80 oc a 1 2 & -2 4 8 a) Vos GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 20 Vos =20V sec JU fa IK Hz +126C 0 -2 4 -8 8 gfs FORWARD TRANSCONOUCTANCE (mmhosi Vas - GATE-SOURCE VOLTAGE (VOLTS) \p DRAIN CURRENT (mA) Ip DRAIN CURRENT (mA) gfs FORWARD TRANSCONDUCTANCE (mmhos) 4 8 2 16 20 Vps ORAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics 8 8 8 1 -2 -3 -4 8 Vaqg ~ GATE-SOURCE VOLTAGE {VOLTS} Transconductance Characteristics a Vps = 20V fe 3 m a a) 4 5 Vo6s GATE-SOURVE COLTAGE (VOLTS) Siliconix BENEFITS: ~~ @ No Offset or Error Voltages Generated by Closed Switch. Purely Resistive. High Isolation Resistance From Driver High Off-isolation Ip(off) < 100 pA e High Speed ton < 20 ns PRINCIPAL DEVICES 2N3970-72, 2N4091-93, 2N4391-93 2N4856-61, 2N4856A-61A, U200-02, UCR2N 2N5564-66 2N5638-40, 2N5653-54, J111-13, PN4091-93, PN4302-04, PN4391-93, U1897-99 3111-18 - J113-18, PN4302-18 - PN4304-18, PN4391-18 - PN4393-18, U1897-18 - U1899-18 All of above single devices 2N5566 CHP Jp DRAIN CURRENT (mA) Ip DRAIN CURRENT (mA) gts FORWARD TRANSCONDUCTANCE (mmhos} Output Characteristic 3 4 8 12 16 20 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics & my 3s 8 3 5 1.0 15 2.0 25 Vas GATE-SOQURCE VOLTAGE (VOLTS) Transconductance Characteristics n o Vog * 20V = TK Hz = a 3 +26C +125C a 04 -08 -1.2 -16 -20 -24 Va@s GATE-SOURCE VOLTAGE (VOLTS) 5-3 1979 Siliconix incorporated IN xIuUooI NC iconix PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Common-Gate Input Admittance vs Frequency 100 _ n 3 Vag * 10 Ip = 10 mA w 10 z < & 4 5 10 2 < V 2 O1 10 30 50 70 100 200 f FREQUENCY (MHz) Common-Gate Forward Transadmittance vs Frequency 100 au =10V ID= 10 mA Yfg FORWARD TRANSADMITTANCE (mmhos) 10 30 50 70 100 200 # FREQUENCY (MHz} Common-Gate Reverse Transfer Admittance vs Frequency Yrg TRANSFER ADMITTANCE {mmhos) 10 30 50 70 106 200 f - FREQUENCY (MHz) Common-Gate Output Admittance vs Frequency Yog OUTPUT ADMITTANCE (mmibos} "10 30 50 70 190 f FREQUENCY {MHz} ON Resistance vs Ambient Temperature Ip = 100 pA Vas = 0 (DS RELATIVE TO 265C VALUE 15 25 65 105 145 T TEMPERATURE {C} Gate Operating Current vs Drain-Gate Voltage 1p = 5.0mA 4 Ig - GATE CURRENT (nA) f 2 \ ~.01 o 10 26 30 40 50 VpG ORAIN-GATE VOLTAGE (VOLTS) Drain Current & ON Resistance vs Gate-Source Cutoff Voltage Ipss @ Vps = Tog @ Ip = 10024, Veg = 0 Va@siorF) @ip= tA Vag" 3 JONVESISAY ..NO.. JYNOS-NIvua Sr 120 80 2 Ipss SATURATION DRAIN CURRENT (mA} & a 0 0 ~2 4 6 8 10 Vas(orr) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Output Conductance vs Drain Current Gos ~ OUTPUT CONDUCTANCE immhes) O14 10 10 100 1000 tp DRAIN CURRENT {mA} @N ~ NOISE VOLTAGE (nV//Hiz) LEAKAGE CURRENT {nA} Common-Source Capacitances vs Gate-Source Voltage Vps = 20 Crgg @ Vpg* 0 CAPACITANCE (pF) 90 4 -8 12 ~6 20 Vas ~ GATE-SOURCE VOLTAGE (VOLTS) Equivalent Input Noise Voltage and Noise Current vs Frequency 4K 19 100 10 1 10* 10 100 * 40K 100K # ~ FREQUENCY (Hz) Leakage Current vs Ambient Temperature -400 F iggs @ Vas = -20 V, Vps 0 r Ipioff) @ Vs * 20 V, Vs = -12 V -10 i = | 1. | raw a 1 -1.0 Ss + + AFF \Diott} TY Tt t| 01 . -.01 0 2% 50 76 100 125 150 T TEMPERATURE (C) @H//dWv) AN3HYND ASION NE 5-4 1979 Siliconix incorporated