©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC546/547/548/549/550
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC546
: BC547/550
: BC548/549
80
50
30
V
V
V
VCEO Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
65
45
30
V
V
V
VEBO Emitter-Base Voltage : BC546/547
: BC548/549/550 6
5V
V
ICCollector Current (DC) 100 mA
PCCollector Power Dissipation 500 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 110 800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 90
200 250
600 mV
mV
VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 700
900 mV
mV
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA
VCE=5V, IC=10mA 580 660 700
720 mV
mV
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Cib Input Capacitance VEB=0.5V, IC=0, f=1 MHz 9 pF
NF Noise Figure : BC546/547/548
: BC549/550
: BC549
: BC550
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ, f=30~15000MHz
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC546/547/548/549/550
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5 . Output Capac itance Figure 6. Curr e nt Gain Band width Produ c t
02468101214161820
0
20
40
60
80
100
IB = 50 µA
IB = 100µA
IB = 150µA
IB = 200µA
IB = 250µA
IB = 300µA
IB = 350µA
IB = 400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat )[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.1
1
10
100
f=1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE = 5V
fT, CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC546/547/548/549/550
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
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