Power Transistors
1
Publication date: February 2003 SJD00001BED
2SA0794 (2SA794), 2SA0794A (2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Complementary to 2SC1567, 2SC1567A
■Features
•High collector-emitter voltage (Base open) VCEO
•Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
•TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
hFE1 90 to 155 130 to 220
Parameter Symbol Rating Unit
Collector-base voltage 2SA0794 VCBO −100 V
(Emitter open) 2SA0794A −120
Collector-emitter voltage 2SA0794 VCEO −100 V
(Base open) 2SA0794A −120
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC− 0.5 A
Peak collector current ICP −1A
Collector power dissipation PC1.2 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage 2SA0794 VCEO IC = −100 µA, IB = 0 −100 V
(Base open) 2SA0794A −120
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5V
Forward current transfer ratio hFE1 *VCE = −10 V, IC = −150 mA 90 220
hFE2 VCE = −5 V, IC = −500 mA 50 100
Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V
Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.20 V
Transition frequency fTVCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.1
3.8
±0.3
11.0
±0.5
16.0
±1.0
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
123
φ 3.16
±0.1
2SA0794, 2SA0794A
2SJD00001BED
IC VBE VCE(sat) ICVBE(sat) IC
PC TaIC VCE IC IB
hFE ICfT IECob VCB
0 16040 12080
0
1.6
1.2
0.8
0.4
Collector power dissipation P
C
(W)
Ambient temperature T
a
(°C)
0
0−12−2−10−4−8−6
−1.2
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
T
C
= 25°C
I
B
= −20 mA
−2 mA
−4 mA
−6 mA
−8 mA
−18 mA
−10 mA
−12 mA
−16 mA
−14 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0
0−4−8−12−2−6−14−10
−1.2
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
V
CE
= −10 V
T
C
= 25°C
Base current IB (mA)
Collector current IC (A)
0
0−1.0− 0.8− 0.6− 0.4− 0.2
− 0.6
− 0.5
− 0.4
− 0.3
− 0.2
− 0.1
VCE = −10 V
Ta = 125°C−25°C
75°C
Base-emitter voltage VBE (V)
Collector current IC (A)
− 0.01 − 0.1 −1
− 0.01
− 0.1
−1
IC / IB = 10
TC = 100°C
25°C−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
− 0.01
− 0.01
− 0.1
−1
− 0.1 −1
IC / IB = 10
TC = −25°C
25°C
100°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)
10
1
000
100
− 0.01 − 0.1 −1
V
CE
= −10 V
T
C
= 100°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
1 10 100
0
40
80
120
200
160
V
CB
= −10 V
f = 200 MHz
T
C
= 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)
−1−10 −100
0
50
40
30
20
10
I
E
= 0
f = 1 MHz
T
C
= 25°C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
Collector-base voltage V
CB
(V)
2SA0794, 2SA0794A
3
SJD00001BED
ICEO TaICBO TaSafe operation area
1
10
102
103
105
104
I
CEO
(T
a
)
I
CEO
(T
a
= 25°C)
02001601208040
VCE = 20 V
Ambient temperature Ta (°C)
1
10
102
103
104
I
CBO
(T
a
)
I
CBO
(T
a
= 25°C)
016040 12080
VCB = −20 V
Ambient temperature Ta (°C)
− 0.001
−1
− 0.01
− 0.1
−1
−10
−10 −100
−1
000
Single pulse
T
C
= 25°C
t = 10 ms
t = 1 s
I
CP
I
C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•Any applications other than the standard applications intended.
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
