LF156QML
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LF156QML JFET Input Operational Amplifiers
Check for Samples: LF156QML
1FEATURES COMMON FEATURES
2 Advantages Low Input Bias Current: 30pA
Replace Expensive Hybrid and Module FET Low Input Offset Current: 3pA
Op Amps High Input Impedance: 1012Ω
Rugged JFETs Allow Blow-Out Free Low Input Noise Current: 0.01 pA / Hz
Handling Compared with MOSFET Input High Common-Mode Rejection Ratio: 100 dB
Devices Large DC Voltage Gain: 106 dB
Excellent for Low Noise Applications Using
Either High or Low Source UNCOMMON FEATURES
Impedance—Very Low 1/f Corner Extremely Fast Settling
Offset Adjust Does Not Degrade Drift or Time to 0.01% 1.5μs
Common-Mode Rejection as in Most Fast Slew Rate 12V/µs
Monolithic Amplifiers Wide Gain Bandwidth 5MHz
New Output Stage Allows Use of Large
Capacitive Loads (5,000 pF) Without Low Input Noise Voltage 12 nV / Hz
Stability Problems DESCRIPTION
Internal Compensation and Large
Differential Input Voltage Capability This is the first monolithic JFET input operational
amplifier to incorporate well matched, high voltage
JFETs on the same chip with standard bipolar
APPLICATIONS transistors (BI-FET™ Technology). This amplifier
Precision High Speed Integrators features low input bias and offset currents/low offset
Fast D/A and A/D Converters voltage and offset voltage drift, coupled with offset
adjust which does not degrade drift or common-mode
High Impedance Buffers rejection. The device is also designed for high slew
Wideband, Low Noise, Low Drift Amplifiers rate, wide bandwidth, extremely fast settling time, low
Logarithmic Amplifiers voltage and current noise and a low 1/f noise corner.
Photocell Amplifiers
Sample and Hold Circuits
Connection Diagrams
Figure 1. Top View
TO-99 Package (LMC)
See Package Number LMC
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2006–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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Simplified Schematic
*3pF in LF357 series.
Detailed Schematic
*C = 3pF in LF357 series.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings(1)
Supply Voltage ±22V
Differential Input Voltage ±40V
Input Voltage Range(2) ±20V
Output Short Circuit Duration Continuous
TJmax 150°C
Still Air 560 mW
Power Dissipation at TA= 25°C(3)(4) 500 LF/Min Air Flow 1200 mW
Still Air 162°C/W
θJA
Thermal Resistance 400 LF/Min Air Flow 89°C/W
θJC 32°C/W
Storage Temperature Range 65°C TA+150°C
Lead Temperature (Soldering 10 sec.) 300°C
ESD tolerance(5) 1200V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate condition for
which the device is functional, but do not ensure specific performance limits . For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(3) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax(maximum junction temperature),
θJA(package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PD=(TJmaxTA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(4) Maximum power dissipation (PDmax)is defined by the package characteristics. Operating the part near the PDmax may cause the part to
operate outside specified limits.
(5) Human body model, 100pF discharged through 1.5K.
Quality Conformance Inspection
MIL-STD-883, Method 5005 - Group A
Subgroup Description Temp ( C)
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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LF156 Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified.
DC: VCC = ±5V, VCM = 0V, RS= 50
Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
VIO Input Offset Voltage -5.0 5.0 mV 1
-7.0 7.0 mV 2, 3
VCC = ±20V -5.0 5.0 mV 1
-7.0 7.0 mV 2, 3
IIO Input Offset Current VCC = ±20V -0.02 0.02 nA 1
-20 20 nA 2, 3
+IIB Input Bias Current VCC = ±20V -0.1 0.1 nA 1
-10 50 nA 2, 3
VCC = ±20V, VCM = -16V -0.1 0.1 nA 1
-10 50 nA 2, 3
VCC = ±20V, VCM = 16V -0.1 3.5 nA 1
-10 60 nA 2, 3
-I IB Input Bias Current VCC = ±20V -0.1 0.1 nA 1
-10 50 nA 2, 3
VCC = ±20V, VCM = -16V -0.1 0.1 nA 1
-10 50 nA 2, 3
VCC = ±20V, VCM = 16V -0.1 3.5 nA 1
-10 60 nA 2, 3
+PSRR Power Supply Rejection Ratio +VCC = 20V to 10V, 85 dB 1, 2, 3
-VCC = -20V
-PSRR Power Supply Rejection Ratio -VCC = -20V to -10V, 85 dB 1, 2, 3
+VCC = 20V
CMRR Common Mode Rejection Ratio VCM = ±11V 85 dB 1, 2, 3
ICC Power Supply Current 7.0 mA 1
14 mA 2, 3
+IOS Short Circuit Current VO= 0V -45 -15 mA 1
-35 -10 mA 2
-65 -15 mA 3
-IOS Short Circuit Current VO= 0V 15 45 mA 1
10 35 mA 2
15 65 mA 3
VCM Common Mode Voltage Range See(1) -11 11 V 1, 2, 3
+VOP Output Voltage Swing RL= 10K12 V 4, 5, 6
RL= 2KSee(1) 10 V 4, 5, 6
-VOP Output Voltage Swing RL= 10K-12 V 4, 5, 6
RL= 2KSee(1) -10 V 4, 5, 6
AVS Large Signal Voltage Gain RL= 2K, VO= 0 to 10V 50 V/mV 4
25 V/mV 5, 6
RL= 2K, VO= 0 to -10V 50 V/mV 4
25 V/mV 5, 6
(1) Parameter specified by CMRR test.
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LF156 Electrical Characteristics AC Parameters
The following conditions apply, unless otherwise specified.
AC: VCC = ±5V, VCM = 0V, RS= 50
Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
+SR Slew Rate AV= 1, RLOAD = 2K, 7.5 V/µS 7
CL= 100pfd,
VI= -5V to +5V
-SR Slew Rate AV= 1, RL= 2K, 7.5 V/µS 7
CL= 100pF,
VI= +5V to -5V
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Typical DC Performance Characteristics
Input Bias Current Input Bias Current
Figure 2. Figure 3.
Input Bias Current Voltage Swing
Figure 4. Figure 5.
Supply Current Supply Current
Figure 6. Figure 7.
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Typical DC Performance Characteristics (continued)
Negative Current Limit Positive Current Limit
Figure 8. Figure 9.
Positive Common-Mode Negative Common-Mode
Input Voltage Limit Input Voltage Limit
Figure 10. Figure 11.
Open Loop Voltage Gain Output Voltage Swing
Figure 12. Figure 13.
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Typical AC Performance Characteristics
Gain Bandwidth Normalized Slew Rate
Figure 14. Figure 15.
Output Impedance Output Impedance
Figure 16. Figure 17.
LF156 Small Signal Pulse LF156 Large Signal Puls
Response, AV= +1 Response, AV= +1
Figure . Figure 18.
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Typical AC Performance Characteristics (continued)
Inverter Settling Time Open Loop Frequency Response
Figure 19. Figure 20.
Bode Plot Common-Mode Rejection Ratio
Figure . Figure 21.
Power Supply Rejection Ratio Undistorted Output Voltage Swing
Figure 22. Figure 23.
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Typical AC Performance Characteristics (continued)
Equivalent Input Noise
Equivalent Input Noise Voltage Voltage (Expanded Scale)
Figure 24. Figure 25.
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APPLICATION HINTS
These are op amps with JFET input devices. These JFETs have large reverse breakdown voltages from gate to
source and drain eliminating the need for clamps across the inputs. Therefore large differential input voltages can
easily be accommodated without a large increase in input current. The maximum differential input voltage is
independent of the supply voltages. However, neither of the input voltages should be allowed to exceed the
negative supply as this will cause large currents to flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially
causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force
the amplifier output to a high state. In neither case does a latch occur since raising the input back within the
common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output however, if
both inputs exceed the limit, the output of the amplifier will be forced to a high state.
These amplifiers will operate with the common-mode input voltage equal to the positive supply. In fact, the
common-mode voltage can exceed the positive supply by approximately 100 mV independent of supply voltage
and over the full operating temperature range. The positive supply can therefore be used as a reference on an
input as, for example, in a supply current monitor and/or limiter.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
All of the bias currents in these amplifiers are set by FET current sources. The drain currents for the amplifiers
are therefore essentially independent of supply voltage.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize “pickup” and maximize the frequency of the feedback pole by minimizing the capacitance
from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3dB frequency of the closed loop
gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less than
approximately six times the expected 3 dB frequency a lead capacitor should be placed from the output to the
input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor
and the resistance it parallels is greater than or equal to the original feedback pole time constant.
Typical Circuit Connections
Figure 26. VOS Adjustment
VOS is adjusted with a 25k potentiometer
The potentiometer wiper is connected to V+
For potentiometers with temperature coefficient of 100 ppm/°C or less the additional drift with adjust is
0.5μV/°C/mV of adjustment
Typical overall drift: 5μV/°C ±(0.5μV/°C/mV of adj.)
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Figure 27. Driving Capacitive Loads
*LF156 R = 5k
Due to a unique output stage design, these amplifiers have the ability to drive large capacitive loads and
still maintain stability. CL(MAX) 0.01μF.
Overshoot 20%
Settling time (ts)5μs
Typical Applications
Figure 28. Settling Time Test Circuit
Settling time is tested with the LF156 connected as unity gain inverter.
FET used to isolate the probe capacitance
Output = 10V step
Figure 29. Large Signal Inverter Output, VOUT (from Settling Time Circuit)
LF356
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Figure 30. Low Drift Adjustable Voltage Reference
ΔVOUT/ΔT = ±0.002%/°C
All resistors and potentiometers should be wire-wound
P1: drift adjust
P2: VOUT adjust
Figure 31. Fast Logarithmic Converter
Dynamic range: 100μAIi1mA (5 decades), |VO| = 1V/decade
Transient response: 3μs for ΔIi= 1 decade
C1, C2, R2, R3: added dynamic compensation
VOS adjust the LF156 to minimize quiescent error
RT: Tel Labs type Q81 +
0.3%/°C
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Figure 32. Precision Current Monitor
VO= 5 R1/R2 (V/mA of IS)
R1, R2, R3: 0.1% resistors
Figure 33. 8-Bit D/A Converter with Symmetrical Offset Binary Operation
R1, R2 should be matched within ±0.05%
Full-scale response time: 3μs
EOB1 B2 B3 B4 B5 B6 B7 B8 Comments
+9.920 1 1 1 1 1 1 1 1 Positive Full-Scale
+0.040 1 0 0 0 0 0 0 0 (+) Zero-Scale
0.040 0 1 1 1 1 1 1 1 () Zero-Scale
9.920 0 0 0 0 0 0 0 0 Negative Full-Scale
Figure 34. Wide BW Low Noise, Low Drift Amplifier
Parasitic input capacitance C1 3pF interacts with feedback elements and creates undesirable high
frequency pole. To compensate add C2 such that: R2 C2 R1 C1.
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Figure 35. Boosting the LF156 with a Current Amplifier
IOUT(MAX)150mA (will drive RL100Ω)
No additional phase shift added by the current amplifier
Figure 36. 3 Decades VCO
R1, R4 matched. Linearity 0.1% over 2 decades.
Figure 37. Isolating Large Capacitive Loads
Overshoot 6%
ts10μs
When driving large CL, the VOUT slew rate determined by CLand
IOUT(MAX):
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Figure 38. Low Drift Peak Detector
By adding D1 and Rf, VD1=0 during hold mode. Leakage of D2 provided by feedback path through Rf.
Leakage of circuit is essentially Ibplus capacitor leakage of Cp.
Diode D3 clamps VOUT (A1) to VINVD3 to improve speed and to limit reverse bias of D2.
Maximum input frequency should be << ½πRfCD2 where CD2 is the shunt capacitance of D2.
Figure 39. High Impedance, Low Drift Instrumentation Amplifier
System VOS adjusted via A2 VOS adjust
Trim R3 to boost up CMRR to 120 dB. Instrumentation amplifier resistor array recommended for best
accuracy and lowest drift
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Figure 40. Fast Sample and Hold
Both amplifiers (A1, A2) have feedback loops individually closed with stable responses (overshoot negligible)
Acquisition time TA, estimated by:
(1)
LF156 develops full Sroutput capability for VIN 1V
Addition of SW2 improves accuracy by putting the voltage drop across SW1 inside the feedback loop
Overall accuracy of system determined by the accuracy of both amplifiers, A1 and A2
Figure 41. High Accuracy Sample and Hold
By closing the loop through A2, the VOUT accuracy will be determined uniquely by A1.
No VOS adjust required for A2.
TAcan be estimated by same considerations as previously but, because of the added
propagation delay in the feedback loop (A2) the overshoot is not negligible.
Overall system slower than fast sample and hold
R1, CC: additional compensation
Use LF156 for
Fast settling time
Low VOS
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Figure 42. High Q Notch Filter
2R1 = R = 10MΩ
2C = C1 = 300pF
Capacitors should be matched to obtain high Q
fNOTCH = 120 Hz, notch = 55 dB, Q > 100
Use LF155 for
Low IB
Low supply current
Revision History
Date Revision Section Originator Changes
Released
03/10/06 A New Released, Corporate format. R. Malone New Release, Corporate format 1 MDS data
Electrical Section Delete Drift Value sheet converted into a Corp. data sheet format.
table. Following MDS data sheet will be Archived
MNLF156-X, Rev. 2A0. Delete Drift Value table
from Electrical Section. Reson: Referenced
product is 883 only.
03/25/13 A All - Changed layout of National Data Sheet to TI
format.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
LF156H/883 ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 LF156H/883 Q ACO
LF156H/883 Q >T
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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