1N5820 – 1N5822 1 of 4 © 2006 Won-Top Electronics
Pb
1N5820 – 1N5822
3.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability A B A
! Low Power Loss, High Eff icienc y
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate current by 20%.
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current (Note 1) @TL = 95°C IO3.0 A
Non-Repetiti ve P eak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 80 A
Forward Voltage @IF = 3.0A
@I
F = 9.4A VFM 0.475
0.850 0.50
0.90 0.525
0.950 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 2.0
20 mA
Typic al Junction Capacitance (Note 2) Cj250 pF
Typical Therm al Res istance Junction to Ambient (Note 3) RJA 40 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Valid provided that leads are kept at ambient t emperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. P.C.B. mounted, 12. 7mm lead length with 63.5mm2 copper pad.
WTE
POWER SEMICONDUCTORS
DO-201AD
Dim Min Max
A25.4 —
B7.20 9.50
C1.20 1.30
D4.80 5.30
All Dimensions in mm