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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT3906E TRANSISTOR
DESCRIPTION
PNP Epitaxial planar SiliconTransistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904E)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
3N
B E
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collecto
r
-Base Volta
g
e -40 V
V
CEO
Collecto
r
-Emitter Volta
g
e -40 V
V
EBO
Emitte
r
-Base Volta
g
e -5 V
I
C
Collector Current -Continuous -200 mA
P
D
Power Dissi
p
ation 150 mW
RÆŸ
JA
Thermal Resistance
,
Junction to Ambient 833 ℃/W
T
J
O
p
eratin
g
Tem
p
erature 150 ℃
T
stg
Stora
g
e and Tem
p
erature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Paramete
r
S
y
mbol Test conditions MIN TYP MAX UNIT
Collecto
r
-base breakdown volta
g
e V
(
BR
)
CBO IC=-10
µ
A,IE=0 -40 V
Collecto
r
-emitter breakdown volta
g
e V
(
BR
)
CEO IC=-1mA,IB=0 -40 V
Emitte
r
-base breakdown volta
g
e V
(
BR
)
EBO IE=-10
µ
A,IC=0 -5 V
Collector cut-off current ICE
X
VCE=-30V,VEB
(
off
)
=-3V -0.05
µ
A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1
µ
A
hFE
(
1
)
VCE=-1V,IC=-0.1mA 60
hFE
(
2
)
VCE=-1V,IC=-1mA 80
hFE
(
3
)
VCE=-1V,IC=-10mA 100 300
hFE
(
4
)
VCE=-1V,IC=-50mA 60
DC current gain
hFE
(
5
)
VCE=-1V,IC=-100mA 30
VCE
(
sat
)
1IC=-10mA,IB=-1mA -0.25 V
Collector-emitter saturation voltage VCE
(
sat
)
2IC=-50mA,IB=-5mA -0.4 V
VBE
(
sat
)
1IC=-10mA,IB=-1mA -0.65 -0.85 V
Base-emitter saturation voltage VBE
(
sat
)
2IC=-50mA,IB=-5mA -0.95 V
Transition fre
q
uenc
y
fTVCE=-20V,IC=-10mA,f=100MHz 250 MHz
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector output capacitance Cobo V
CB=-5V,IE=0,f=1MHz 4.5 pF
Input capacitance Ciob V
EB=-0.5V,IC=0,f=1MHz 10 pF
Noise figure NF VCE=-5V,Ic=0.1mA,f=1KHz,RS=1KΩ 4 dB
Delay time td 35 nS
Rise time tr
VCC=-3V, VBE(OFF)=0.5V,IC=-10mA ,
IB1=-1mA 35 nS
Storage time tS 225 nS
Fall time tf VCC=-3V, IC=-10mA,IB1= IB2=- 1mA 75 nS
Typical Characteristics MMBT3906E
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.230 0.330 0.009 0.013
b1
D 1.550 1.650 0.061 0.065
E 1.550 1.650 0.061 0.065
D2
E2
e
L
L1
L2
L3
L4
k
z
0.320 REF. 0.013 REF.
0.160 REF. 0.006 REF.
Symbol D imensions In M illimeters D imensions In Inches
1.000 TYP. 0.040 TYP.
0.750 REF.
1.000 REF.
0.030 REF.
0.040 REF.
0.320 REF. 0.013 REF.
0.230 REF.
0.180 REF.
0.280 REF. 0.011 REF.
0.250 REF.
0.200 REF.
0.009 REF.
0.007 REF.
0.010 REF.
0.008 REF.
