BC546B - DIOTEC SEMICONDUCTOR AG - Datasheet.Technology

BC546 ... BC549

NPN General Purpose Si-Epitaxial Planar Transistors

Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN

Version 2006-05-31

Dimensions - Maße [mm]

Power dissipation – Verlustleistung 500 mW

Plastic case

Kunststoffgehäuse

TO-92

(10D3)

Weight approx. – Gewicht ca. 0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)

BC546 BC547 BC548/549

Collector-Emitter-voltage E-B short VCES 85 V 50 V 30 V

Collector-Emitter-voltage B open VCEO 65 V 45 V 30 V

Collector-Base-voltage E open VCBO 80 V 50 V 30 V

Emitter-Base-voltage C open VEB0 5 V

Power dissipation – Verlustleistung Ptot 500 mW 1)

Collector current – Kollektorstrom (dc) IC100 mA

Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA

Peak Base current – Basis-Spitzenstrom IBM 200 mA

Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

-55...+150°C

-55…+150°C

Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)

Group A Group B Group C

DC current gain – Kollektor-Basis-Stromverhältnis 2)

VCE = 5 V, IC = 10 µA hFE typ. 90 typ. 150 typ. 270

VCE = 5 V, IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800

VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ. 400

h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz

Small signal current gain

Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600

Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ3.2 ...8.5 kΩ6 ... 15 kΩ

Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS

Reverser voltage transfer ratio

Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4

1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2 x 2.54

CBE

BC546 ... BC549

Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 80 V, (B-E short)

VCE = 50 V, (B-E short)

VCE = 30 V, (B-E short)

BC546

BC547

BC548 / BC549

ICES

–

0.2 nA

15 nA

VCE = 80 V, Tj = 125°C, (B-E short)

VCE = 50 V, Tj = 125°C, (B-E short)

VCE = 30 V, Tj = 125°C, (B-E short)

BC546

BC547

BC548 / BC549

ICES

–

4 µA

Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

80 mV

200 mV

600 mV

Base saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

700 mV

900 mV

–

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE

580 mV

–

660 mV

–

700 mV

720 mV

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz fT– 300 MHz –

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 3.5 pF 6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 –9 pF–

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

BC546 / BC547

BC548 / BC549

–

2 dB

1.2 dB

10 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren BC556 ... BC559

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC546A

BC547A

BC548A

BC546B

BC547B

BC548B

BC549B

BC547C

BC548C

BC549C

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden