PolarTM Power MOSFET HiPerFETTM IXFP12N50PM VDSS ID25 RDS(on) (Electrically Isolated Tab) trr = 500V = 6A 500m 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M 500 500 V V VGSS VGSM Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 6 30 A A IA EAS TC = 25C TC = 25C 12 600 A mJ dv/dt IS IDM, VDD VDSS, TJ =150C 10 V/ns PD TC = 25C 50 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS = 0V, ID = 250A 500 VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 6A, Note 1 V 5.5 Isolated Tab D S G = Gate S = Source D = Drain Features Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Characteristic Values Min. Typ. Max. VGS(th) G Easy to mount Space savings V 100 nA 5 A 250 A TJ = 125C 500 m (c) 2008 IXYS CORPORATION, All rights reserved DS99510F(04/08) http://store.iiic.cc/ IXFP12N50PM Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10V, ID = 6A, Note 1 7.5 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 13 S 1830 pF 182 pF 16 pF 22 ns 27 ns 65 ns tf 20 ns Qg(on) 29 nC 11 nC 10 nC td(on) tr VGS = 10V, VDS = 0.5 td(off) RG = 10 (External) Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 6A VDSS, ID = 6A Qgd 2.5 C/W RthJC Source-Drain Diode ISOLATED TO-220 (IXFP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 6A, -di/dt = 150A/s, VR = 100V, VGS = 0V 300 ns C A 2.8 18.2 Notes:1. Pulse test, t 300 s; duty cycle, d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP12N50PM Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25C @ 25C 12 30 VGS = 10V 8V 24 21 8 7V I D - Amperes I D - Amperes VGS = 10V 27 10 6 4 18 15 7V 12 9 6 2 6V 6V 3 0 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature @ 125C 12 2.6 VGS = 10V 2.4 7V 8 6 6V 4 VGS = 10V 2.2 R D S ( o n ) - Normalized 10 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.0 1.8 1.6 ID = 12A 1.4 ID = 6A 1.2 1.0 0.8 2 0.6 5V 0 0.4 0 2 4 6 8 10 12 -50 -25 VD S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 6A Value vs. Drain Current Fig. 6. Drain Curre nt v s. Case Te mpe rature 3.4 7 VGS = 10V 3.0 6 TJ = 125C 2.6 5 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 TJ = 25C 1.4 4 3 2 1.0 1 0.6 0 0 3 6 9 12 I D 15 18 21 24 27 30 - Amperes -50 -25 0 25 50 75 100 T C - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 125 150 IXFP12N50PM Fig. 8. Transconductance 20 27 18 24 16 21 14 18 TJ = - 40C 15 25C 125C g f s - Siemens I D - Amperes Fig. 7. Input Admittance 12 TJ = 125 C 10 25C - 40C 8 12 9 6 6 4 3 2 0 0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 2 4 6 Fig. 9. Source Current vs. Source-To-Drain Voltage 10 12 14 16 18 20 24 27 30 - Amperes 10 9 VDS = 250V 8 ID = 6A 7 IG = 10m A 30 VG S - Volts 25 I S - Amperes D Fig. 10. Gate Charge 35 20 15 TJ = 125 C 6 5 4 3 10 2 TJ = 25C 5 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 0 1.0 3 6 9 - Volts Q 12 G 15 18 21 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1MHz RDS(on) Limit Ciss I D - Amperes Capacitance - picoFarads 8 I V G S - Volts 1000 Coss 25s 10 100s 1ms 1 100 10ms TJ = 150C Crss DC TC = 25C 0.1 10 0 5 10 15 20 25 30 35 40 10 100 V D S - Volts V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1000 IXFP12N50PM Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - C / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D http://store.iiic.cc/