TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND MILITARY APPLICATIONS 100 W at 75C Case Temperature @ 700 V Collector-Emitter Off-State Voltage @ Min VipR)}ceo of 400 V Max toff of 1.7 us atIC=1A Typ VCE(sat) of 0.3 V at IC =3.5A Typ ft of 5 MHz at 12V,0.2A *mechanical data ALL JEDEC TO-3 DIMENSIONS AND NOTES ARE APPLICABLE THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE 1.573 Max \ aso 0.202 MIN, 0.525 8 MAK 2 0.250 pase 2 LEADS + 2 - EMITTER Ae dt 1.050 MAX ae ~ 9.225 Th Oi + + OA 0208 0.440 |" oe pia 0.100 f MAX GOTH ENDS 0.135 MAK CASE TEMPERATURE 1 ~ Base MEASUREMENT POINT DIMENSIONS ARE IN INCHES absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Emitter Voltage (Vgg = 1.5 V, See Note 1) *Collector-Emitter Voltage (Base Open, See Note 1) *Emitter-Base Voltage "Continuous Collector Current Continuous Base Current : . Safe Operating Area at (or below) 75C Case Temperature Continuous Device Dissipation at (or below) 75C Case Temnperature (See } Note 2 Continuous Device Dissipation at (or below) 25C Free-Air Temperature (See Note 3) Unclamped Inductive Load Energy (See Note 4) Operating Collector Junction Temperature Range NOTES: JEDEC registared data. This data sheet contains all applicable registered data in effect at the time of publication. "storage Temperature Range Terminal Temperature 1/16 Inch from Case for 10 Seconds 700 V 500 V 6V 35A 2A See Figure 6 100 W 4w 180 mJ 65C to 150C ~65C to 200C 300C 1, These values apply only when the collector-emitter voltage is applied with the transistor In the off-state with the base-emitter diode reverse-biasad or open-circuited, as specified. In Operation, the limitations of Figure 6 must be observed. 2, Derste finearly to 160C case temperature at the rate of 1.33 wc. 3. Derate linearly to + 60C free-air temperature at the rate of 32 mw/*c. 4. . This rating is based on the capability of the transistor to operate safety in the clrcult of Figure 2, condition 1. L = 40 mH, Repo * 3 k2, Vage = 1.5 V, Rg = 0.1 2, Voc = 50 V. Energy I2L/2. TEXAS INSTRUMENTS 2-359TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR *electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX)UNIT Collector-E mitt V(BRICEO crores Ic = 100 mA, Ig = 0, See Note 5 400 v Breakdown Voltage Collector-E mitter Vv (cm=3.5A, Ree = 102, See Figure 2 (Condition 2) 500 Vv (BRICER Breakdown Voltage cm BE 6 igure 'cEO Collector Cutoff Current Vce = 500 V, Ip =O 0.25 | mA Voce = 700 V, Veg = -1.5V 0.5 IcEV Collector Cutoff Current cE BE z mA Voce =400V, VgE=15V, To= 125C 0.5 lego Emitter Cutoff Current Vep=6V, ico=90 5| mA Vee=5v, Ic=lA 30 90 Static Forward Current cE c HEE . Vce =5V, Ic=25A See Notes5and6{ 10 Transfer Ratio Z Vce=5V, Ic=1A, To = 88C 10 VBE Base-E mitter Voltage WRB=O07A, Ic=3.5A, See Notes 5 and 6 wa 2] Vv Vv Collector-E mitter 1p eO.7A, i=1A See N & and 02 0.8 Vv CE (sat) Saturation Voltage 'p=0.7A, IG=3.5A ee Notes 5 and 6 03 2.5 Small-Signal Common-E mitter hi Vee =12V, 170.2A, f=1MH 28 5 | tel Forward Current Transfer Ratio ce c ; Common-Base Open-Circuit Cobo Peneircul Veg =20V, i=0, = 1MHz 100 150 | pF Output Capacitance NOTES: 5, These parameters must be measured using pulse techniques, ty, = 300 us, duty cycle < 2%, . These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0,125 inch from the device body, a thermal characteristics PARAMETER MAX UNIT Resc Junction-to-Case Thermal Resistance 0.76 CAN Resa Junction-to-Free-Air Thermal Resistance 31.25 " *switching characteristics at 25C case temperature PARAMETER TEST CONDITIONST MAX UNIT ton Turn-On Time ic = 1A, Ip(1) = 0.1A, Igi2) = -0.5 A, 0.8 Ss toft Turn-Off Time Vaelott) =-8V, RL= 1259, See Figure 1 1.7 " t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters, *JEDEC registered data 2-260 TEXAS INSTRUMENTSTYPE 2N5157 N-P-N SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION INPUT ing14 wonitor Lan OUTPUT ~ Rens = MONITOR eh r Von = 34.1V=--y Qe) Tut INPUT _ 2N5385 -6V Rep2= RL = 1262 12.2 L - OUTPUT Vep2"= 6v T+ [+ Veo = 125 V . L Vee * 36V AQvustFoR Le Von = 34.1 VAT + INPUT MONITOR TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. Vger is 8 30-V pulse {from 0 V) into a 50-82 termination. The Vgen waveform Is suppiled by a generator with the following characteristics: ty < 15 ns, te < 15 ns, Zoue = 50 Qwy = 5 Hs, duty cycle 5%. . Waveforms are monitored on an ocsilloscope with the following characteristics: tp < 10 ns, Rin > 1 MM, Ci, < 11.5 pF. . Resistors must ba noninductive types. The d-c power supplies may require additional bypassing in order to minimize ringing. FIGURE 1 INDUCTIVE LOAD SWITCHING Vcg MONITOR moo ka ty (See Note A} INPUT 9 VOLTAGE ~5V- A 100 ms ' COLLECTOR M + CURRENT Veco =50V = J- i Monitor Viericen-L LjJ COLLECTOR - = VOLTAGE Vv =10V , 6B1 _ 50 V _ VCE (sat) = CONDITION | Rga2 | Ves2 L lom tw 1 3k2 1.5V | 40mH 3A__| 2.4 ms 2 102 ov 10mH_ | 3.5A |= 0.7 ms TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTE A: input pulse width Is Incressed until the peak collector current reaches the specified value of Icy. FIGURE 2 TEXAS INSTRUMENTS 2-3612-362 TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT BASE-EMITTER VOLTAGE vs CASE TEMPERATURE COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE 100 v Voe"5 Seo 6 + os See & 6 8 pe Notes 6 and 6 } oa wo > Ip + 700 ma, $ oe pt OSA C8254 i Joos r "25 - s oe g I Pos ] 0 i tg * S00 mA, IC = 25 A w 3 S | jan 100mA IG 1A i 02 Bn $ t 2 ater tA 204A, Ic* 8 01 00400701 0.2 04 O71 20 4 -75 60-25 0 28 60 78 100 126 180 176 -78 -80 -26 0 26 60 76 100 125 150 176 1Collector Currant-A Te-Cose Tempernture"C Toone Tampersture"C FIGURE 3 FIGURE 4 FIGURE 5 NOTES: , These parameters must be measured using pulse techniques, ty = 300 us, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.125 inch from the device body. MAXIMUM SAFE OPERATING AREA THERMAL INFORMATION DISSIPATION DERATING CURVE 10 120 7 D-C Operation z Te < 78C | S 100 2 2 & < 3 1 80 2 07 = 3 a ~ O4 8 N 5 g 60 N B oz z 8 < 9 40 Q on : 07 2 0.04 x N G 20 = N 0,02 t c 0.01 0 10 20 40 70100 200 400 7001000 70 80 90 100 110 120 130 140 150 VceEColtector-Emitter VoltageV TcCose TemperatureC FIGURE 6 FIGURE 7 TE cannot assume ony responsibility for any circuits shown TEXAS INSTRUMENTS or represent thot they ote free from patent infringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIM. IN GRDER TO IMPROVE OESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLEProt Typ Tg = 25C VcEO Ico hrE Ic type (Tc = 100 C) min max min max Ww Vv A A BUY 70A 75 1000* 10 15 1,0 BUY 708 75 800* 10 15 1,0 BUY 70C 75 500* 10 15 1,0 BUY 71 40 2200* 2 BDX 31 40 2200* 4 BDX 32 40 1700* 4 2N 3439 Siehe Datenblatt Seite 2-301; See Data Sheet Page 2-301 2N 3440 Siehe Datenblatt Seite 2-301; | See Data Sheet Page 2-301 2N 3583 2 35 175 1 49 200 0,5 2N 3584 2 35 250 2 8 140 1 2N 3585 2 35 300 2 8 140 1 2N 3902 4 100 325 2,5 30 90 1 2N 4240 2 35 300 2 6 240 0,75 2N 5157 4 100 400 3,6 30 90 1 2N 5241 4 125 325 5 15 35 2,5 TIP 525 4 (60) 200 5 30 150 2,5 TIP 531 4 (150) 300 15 20 120 7,5 TIP 532 4 (150) 400 15 20 120 7,5 TIP 533 4 (150) 300 15 20 120 75 TIP 534 4 (150) 400 15 20 120 7,5 TIP 535 5 (100) 200 7,5 20 100 5 TIP 536 5 (100) 200 7,5 20 100 5 TIP 537 5 (100) 400 75 20 100 5 TIP 538 5 (125) 200 15 20 100 75 TIP 539 5 (125) 300 15 20 100 75 TIP 540 5 (125) 400 15 20 100 75 3-10 TEXAS INSTRUMENTSft *IceEv (IcEO) Gehause Anwendungen, Bemerkungen min Ices @ VE package applications, remarks MHz mA Vv (1) 1000 TO-3 Fiir Schalteranwendungen (1) 800 TO-3 switching applications (1) 500 TO-3 1 2200 TO-3 Fernsehanwendung, Horizontal-Ablenkendstufen in Sw TV horizontal deflection black and white 1 2200 TO-3 Fernsehanwendung, Horizontal-Ablenkendstufen in Farbgeraten 1 1700 TO-3 Color TV horizontal deflection 10 1 225 TO-66 Fir industrielle und mititarische Anwendung 10 1 300 TO-66 for industrial and military application 10 1 400 TO-66 5 0,25 400 TO-3 15 2 400 TO-66 2,8 0,5 700 TO-3 2,5 0,5 400 TO-3 40 1 250 TO-3 Verstarker, schnetler Schalter amplifier, high-speed switch 50 1 300 TO-3 Verstarker, schneile Schaltanwendung, Netzgerate 50 1 400 TO-3 amplifier, switch, power supply 50 1 300 TO-3 : 50 1 400 TO-3 10 1 300 TO-3 10 1 400 TO-3 10 1 500 TO-3 10 1 300 TO-3 10 1 400 TO-3 10 1 500 TO0-3 TEXAS INSTRUMENTS