NPN laa D id 2N6282 | 2N6285* 2N6283*| 2N6286* FNEW ENGLAND SEMICONDUCTOR 2N6284*| 2N6287* OB also available as JAN, JANTX, DARLINGTON COMPLEMENTARY JANTXV SILICON POWER TRANSISTORS . .. designed for general-purpose amplifier and low frequency switching applications. @ Collector-Emitter Sustaining Voltage VCEO(sus) = 60 Vde (Min) 2N6282, 2N6285 = 80 Vde (Min) 2N6283, 2N6286 = 100 Vde (Min) 2N6284, 2N6287 @ High DC Current Gain @ Ic = 10 Ade hee = 2400 (Typ) 2N6282, 2N6283, 2N6284 = 4000 (Typ) 2N6285, 2N6286, 2N6287 @ Monolithic Construction with Built-In Base-Emitter Shunt Resistors NES 200 X 200 MIL * MAXIMUM RATINGS PNP/NPN DARLINGTON CHIP . 2N6282 | 2NG283 | 2NG6284 : Rating Symbol | one286 | 2NG286 | 2NezE7 | Ut Collector-Emitter Voitage VcEO 60 80 100 Vde Collector-Base Voltage Ves 60 80 100 Vde Emitter-Base Voltage VEB 5.0 Vde Coliactor Current Continuous le 20 Adc Peak 40 Base Current IB 0.5 Adc Total Device Dissipation @ Te = 25C Pp 160 Watts erate above 25C 0.915 w/c Operating and Storage Junction Ti.Tstg -65 to +200 c Temperature Range Base Bonding Pad...... 045 x .029 Emitter Bonding Pad... .041 x .070 Indicates JEDEC Registered Data. 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-335 REV: -- NEW ENGLAND SEMICONDUCTOR NPN PNP 2N6282 | 2N6285* 2N6283*| 2N6286* NEW ENGLAND SEMICONDUCTOR 2N6284*| 2N6287* y NOB *also available as JAN, JANTX, JANTXV ELECTRICAL CHARACTERISTICS (Tg = 25C unless otherwise noted) Characteristic | Symbol Min | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VcEO (sus) Vde (ic = 0.1 Adc, Ig = 0) 2N6282, 2N6285 60 - 2N6283, 2N6286 80 ~ 2N6284, 2N6287 100 ~ Collector Cutoff Current IcEO mAdc (VcE = 30 Vac, Ig = 0) 2N6282, 2N6285 - 1.0 (Vee = 40 Vac, Ig = 0) 2N6283, 2N6286 - 10 (VcE = 50 Vdc, Ig = 0} 2N6284, 2N6287 . - 10 Cotlector Cutoff Current 'cEx mAdc (VcE = Rated Vog. Vee (off) = 1-5 Ve) - 0S (Vce = Rated Veg, VeEtott) = 1-5 Vde, Te = 150C) ~ 5.0 Emitter Cutoff Current lego - 2.0 mAdc (Vge = 5.0 Vde, I = 0) ON CHARACTERISTICS (1) BC Current Gain hee - (ig = 10 Adc, Vcg = 3.0 Vdc) 750 13,000 (le = 20 Ade, Veg = 3.0 Vde) 100 - Collector-Emitter Saturation Voltage VcElsat} . Vde (tc = 10 Adc, Ig = 40 mAdc} - 2.0 (Ic = 20 Adc, Ig = 200 mAdc) _ 3.0 Base-Emitter On Voltage VBEton) - 28 Vdc (ic = 10 Adc, VoE = 3.0 Vdc) Base-Emitter Saturation Voltage VBE sat) - 4.0 Vde (Ice = 20 Adc, Ig = 200 mAdc} DOYNAMIC CHARACTERISTICS Magnitude af Comman Emitter Smail-Signai Short-Circuit Inge | 4.0 _ MHz Forward Current Transfer Ratio (lig = 10 Ade, Veg = 3.0 Vde, f = 1.0 MHz) Output Capacitance Cop pF (Veg = 10 Vde, te = 0, f = 0.1 MHz) 2N6282, 83, 84 : - 400 2N6285, 86, 87 = 600 Small-Signal Current Gain Ne 300 ~ - lig = 10 Ade, Voge = 3.0 Vde, f = 1.0 kHz) indicates JEDEC Registered Data. (1) Pulse test: Pulse Width ~ 300 ua, Duty Cycte = 2% SWITCHING TIMES SWITCHING TIMES TEST CIRCUIT meee 2N5282/84 Yeo Oy a on Aig & Ac VARIED TO OBTAIN DESIRED CURRENT LEVELS Dy, MUST BE FAST RECOVERY TYPES, eg: A 4908300 USED ABOVE Ig = 100 mA c MSD6100 USED BELOW 1g = 100 mA tT SCoPE v2 rcs 7 3 APPROX. . Re | 3 reov [~ | | | = a = o-_----{-_--_L. ! THI) eon + 56 | 5 v wt APPROX +40v . 0 - Sr Vee = rv us for tg and ty, 01 is disconnected oie = 250 te 1S 10 ns anave=d . Tl 191 * (a2 OUTY CYCLE + 1.0% Ty = 25C 1@ ic, COLLECTOR CURRENT (AMP) 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-335 REV: -- NEW ENGLAND SEMICONDUCTOR