IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.23 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 52 Configuration * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT * Fully Characterized Capacitance and Avalanche Voltage and Current Single * Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-247AC * Switch Mode Power Supply (SMPS) * Uninterruptable Power Supply G * High Speed Power Switching S D TYPICAL SMPS TOPOLOGIES S G * Full Bridge Converters N-Channel MOSFET * Power Factor Correction Boost ORDERING INFORMATION Package TO-247AC IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 C TC = 100 C Currenta ID IDM Linear Derating Factor UNIT V 22 A 14 88 2.2 W/C mJ Single Pulse Avalanche Energyb EAS 1180 Repetitive Avalanche Currenta IAR 22 A Repetitive Avalanche Energya EAR 28 mJ Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 277 W dV/dt 4.8 V/ns TJ, Tstg - 55 to + 150 C 300d 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 4.87 mH, Rg = 25 , IAS = 22 A (see fig. 12). c. ISD 22 A, dI/dt 190 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.55 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = 30 V - - 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 - - 0.23 12 - - S ID = 13 Ab VGS = 10 V VDS = 50 V, ID = 13 Ab A Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Total Gate Charge VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V Coss eff. 3450 - 513 - - 27 - VDS = 1.0 V, f = 1.0 MHz 4935 VDS = 400 V, f = 1.0 MHz 137 VDS = 0 V to 400 Vc Qg ID = 22 A, VDS = 400 V, see fig. 6 and 13b pF 264 - - 120 Gate-Source Charge Qgs - - 32 Gate-Drain Charge Qgd - - 52 Turn-On Delay Time td(on) - 26 - tr - 94 - - 47 - - 47 - - - 22 - - 88 - - 1.5 - 570 850 ns - 6.1 9.2 C Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10 V - VDD = 250 V, ID = 22 A, RG = 4.3 , RD = 11, see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 22A, VGS = 0 Vb TJ = 25 C, IF = 22 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS L Vary tp to obtain required IAS VDS tp VDD D.U.T RG + - IAS V DD A VDS 10 V tp 0.01 Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP22N50A, SiHFP22N50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer D.U.T. + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91207. Document Number: 91207 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 OP O k M DBM A2 S (Datum B) OP1 A D2 Q 5 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 5 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X12-0167-Rev. B, 24-Sep-12 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Ok L L1 N OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 24-Sep-12 Document Number: 91360 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000