2N2904 2N2904A
2N2905 2N2905A
PNP SILICON TRANSISTORS DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2904, 2N2905
series types are PNP silicon transistors manufactured
by the epitaxial planar process, designed for small
signal, general purpose and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N2904 2N2904A
SYMBOL 2N2905 2N2905A UNITS
Collector-Base Voltage VCBO 60 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 0.6 A
Power Dissipation PD 0.8 W
Power Dissipation (TC=25°C) PD 3.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
2N2904 2N2904A
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N2905 2N2905A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=50V - 20 - 10 nA
ICEV V
CE=30V, VEB=0.5V - - - 50 nA
BVCBO I
C=10μA 60 - 60 - V
BVCEO I
C=10mA 40 - 60 - V
BVEBO I
E=10μA 5.0 - 5.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.4 - 0.4 V
VCE(SAT) I
C=500mA, IB=50mA - 1.6 - 1.6 V
VBE(SAT) I
C=150mA, IB=15mA - 1.3 - 1.3 V
VBE(SAT) I
C=500mA, IB=50mA - 2.6 - 2.6 V
2N2904 2N2905
2N2904A 2N2905A
MIN MAX MIN MAX
hFE V
CE=10V, IC=100μA (2N2904, 2N2905) 20 - 35 -
hFE V
CE=10V, IC=100μA (2N2904A, 2N2905A) 40 - 75 -
hFE V
CE=10V, IC=1.0mA (2N2904, 2N2905) 25 - 50 -
hFE V
CE=10V, IC=1.0mA (2N2904A, 2N2905A) 40 - 100 -
hFE V
CE=10V, IC=10mA (2N2904, 2N2905) 35 - 75 -
hFE V
CE=10V, IC=10mA (2N2904A, 2N2905A) 40 - 100 -
hFE V
CE=10V, IC=150mA 40 120 100 300
hFE V
CE=10V, IC=500mA (2N2904, 2N2905) 20 - 30 -
hFE V
CE=10V, IC=500mA (2N2904A, 2N2905A) 40 - 50 -
TO-39 CASE
R2 (6-April 2015)
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2N2904 2N2904A
2N2905 2N2905A
PNP SILICON TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
fT V
CE=20V, IC=50mA, f=100MHz 200 MHz
Cob V
CB=10V, f=100kHz 8.0 pF
ton V
CC=30V, IC=150mA, IB=15mA 45 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA 180 ns
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R2 (6-April 2015)
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