T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 1 of 5
1N821-1 thru 1N829A-1
Availa ble on
commercial
versions
6.2 & 6.55 Volt ZENER REFERENCE DIODES
Qualified per MIL-PRF-19500/159
*Qualified Levels:
JAN, JANTX,
JANTXV and JANS
(available on some part
numbers)
DESCRIPTION
The popular 1N821-1 thru 1N 82 9A-1 series of Zero-TC Reference Diodes provides a selection
of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005
%/oC for minimal voltage change with temperature when operated at 7.5 mA. These glass
axial-leaded DO-35 reference diodes are optionally available with an internal-metallurgical-
bond as well as RoHS compliant version. This type of bonded Zener package construction is
also available in JAN, JANTX, and JANTXV military qualifications where the RoHS compliant
“e3” is not an option. Microsemi also offers numerous other Zener Reference Diode products
for a variety of other voltages up to 200 V.
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA MELF
(surface mount)
1N821UR-1 – 1N829AUR-1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N821 thru 1N829 series.
• Lowered Zener impedance option available.
• Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options on
commercial at lower voltage. (Excludes 1N826 and 1N828.)
• Temperature compensated.
• Interna l meta llurg ic al bond.
• Double plug cons tr uc tion .
• *JAN, JANTX, JANTXV and JANS qualification per MIL-PRF-19500/159 available on 1N821-1, 823-
1, 825-1, 827-1 and 829-1.
• RoHS compliant versions available (commercial grade only).
APPLICA TIONS / BENEFITS
• Provides min im al volt age cha n ges over a broad temperature range.
• For instrumentation and other circuit designs requiring a stable voltage reference.
• Maximum temperature coefficient selections available from 0.01%/ºC to 0.0005%/ºC.
• Tight reference voltage tolerances available on commerci al with center nominal value of 6.2 V by
adding designated tolerance such as 1%, 2%, 3%, etc. after the part number for identification.
(Excludes 1N826 and 1N828.)
• Flexible axial-lea d mount ing t e rmina ls.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Typical low capacitance of 100 pF or less.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage temperature
TJ and TSTG
-55 to +175
oC
Power Dissipation (1)
PD
500
mW
Maximum Zener Current
IZM
70
mA
Solder Pad Temperatures at 10 s
TSP
260
oC
Notes: 1. @ TL = 25 oC and maximum current IZM of 70 mA. For optimum voltage-temperature stability, IZ = 7.5
mA (less than 50 mW in dissipated power). Derate at 3.33 mW/oC above TA = +25 oC.
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 2 of 5
1N821-1 thru 1N829A-1
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass case. DO-35 (DO-204AH) package.
• TERMINALS: Tin-lead (military) or RoHS compliant annealed matte-tin plating (commercial grade only) so ldera ble per M I L-STD-
750, method 2026.
• MARKING: Part number and cathode band (except double anode 1N822-1 and 1N824-1).
• POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: 0.2 gra ms.
• See Package Dimensions on last page.
PART NOMENCLATURE
Applicable to: JAN, JANTX, JANTXV and JANS of 1N821, 1N823, 1N825, 1N827, and 1N829 only:
JAN 1N821 -1
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
Metallurgical Bond
JEDEC type number
(see Electrical Characteristics
table)
Applicable to: commercial 1N821, 1N823, 1N825, 1N827, and 1N829 only:
1N821 A -1 -1% (e3)
JEDEC type number
(see Electrical Characteristics
table)
Zener Impedance
A = 10 ohms
Blank = 15 ohms
Metallurgical Bond
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Applicable to: 1N822 and 1 N824 only:
1N822 -1 -1% (e3)
JEDEC type number
(see Electrical Characteristics
table)
Metallurgical Bond
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Continued on next page.
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 3 of 5
1N821-1 thru 1N829A-1
Applicabl e to: 1N8 26 and 1 N828 on ly :
1N826 -1 (e3)
JEDEC type number
(see Electrical Characteristics
table)
Metallurgical Bond
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms curre nt modula tion (typically 10% of IZT or IZK) and superim pos ed on IZT or IZK respectively.
ELECTRICA L CHARACTERISTICS @ 25oC (unless otherwise specified)
JEDEC
TYPE
NUMBER
(Notes
1 & 5)
ZENER
VOLTAGE
VZ @ IZT
(Note 1 and 4)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
(Note 2)
MAXIMUM
REVERSE
CURRENT
IR @ 3 V
VOLTAGE
TEMPERATURE
STABILITY
(
∆
VZT MAX)
-55oC to +100oC
(Note 3 and 4)
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
Volts
mA
Ohms
µA
mV
% / oC
1N821-1
1N821A-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
96
96
0.01
0.01
1N822-1†
5.9-6.5
7.5
15
2
96
0.01
1N823-1
1N823A-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
48
48
0.005
0.005
1N824-1†
5.9-6.5
7.5
15
2
48
0.005
1N825-1
1N825A-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
19
19
0.002
0.002
1N826-1
6.2-6.9
7.5
15
2
20
0.002
1N827-1
1N827A-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
9
9
0.001
0.001
1N828-1
6.2-6.9
7.5
15
2
10
0.001
1N829-1
1N829A-1
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
5
5
0.0005
0.0005
† Double Anode: Electrical specifications apply under both bias polariti es.
NOTES: 1. When ordering devices with tighter tolerances than specified for the VZ voltage nomi nal of 6.2 V, add a hyphened suffix to the
part number for desired toleranc e, e.g. 1N827-1-2%, 1N829-1-1%, 1N829A-1%, 1N829A-1-1%, e tc.
2. Zener impedance is measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 oC.
3. The maxim um allowable change observed over the ent i re temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the establis hed l imits.
4. Volt age meas urem ents to be performed 15 seconds after applicat i on of dc current.
5. 1N821-1, 1N823-1, 1N825-1, 1N827-1, and 1N829-1 also have qualification to MIL-PRF-19500/159 by adding the JAN,
JANTX, JANTXV or JANS pref i x to part numbers.
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 4 of 5
1N821-1 thru 1N829A-1
GRAPHS
TL, Lead temperature (oC) 3/8” from body
FIGURE 1
POWER DERATING CURVE
IZ – Operating Current (mA)
FIGURE 3
TYPICAL CHANGE OF TEMPERATURE COEFFICIE NT
WITH CHANGE IN OPERATING CURRENT
The curve shown in Figure 3 is typical of the diode series and greatly simplifies the
estimati o n of the Te mp er atu re C oe ffic ie nt (TC) wh en the diode is operat ed at
currents other than 7.5 mA.
EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has
specifi ed T e mper at ure Co efficient (TC ) li mits of +/-0.005 %/oC. To obtain the
typical Temperature Coefficient limits for this same diode operated at a current of
6.0mA, the new TC limits (%/oC) can be estimated using the graph in FIGURE 3.
At a test current of 6.0mA the change in Temperature Coefficient (TC) is
approximately –0.0006 %/oC. The algebraic sum of +/-0.005 %oC and –0.0006
%/oC gives the new estimated limits of +0.0044 %/oC and -0.0056 %/oC.
Change in temperature coefficient (%/oC)
Change in temperature coefficient (mV/oC)
P
D
, Rated Power
Dissipation (mW)
This curve in Figure 4 illustrates the change of diode voltage arising
from the effect of impedance. It is in effect an exploded view of the
Zener oper ating region of the I-V characteristic.
In conjunction with Figure 3, this curve can be used to estimate total
voltage regulation under conditions of both varying temperature and
current.
I
Z
– Operating Current (mA)
FIGURE 4
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT
∆V
Z
– Change in Zener
Voltage (mV)
Operating Current I
ZT
(mA)
FIGURE 2
TYPICAL ZENER IMPEDANCE
vs.
OPERATING CURRENT
Zener Impedance Z
ZT
(OHMS)
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 5 of 5
1N821-1 thru 1N829A-1
PACKAGE DIMENSIONS
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
.060
.107
1.52
2.72
3
BL
.120
.300
3.05
7.62
3
LD
.018
.023
0.46
0.58
LL
1.000
1.500
25.40
38.10
LL1
.050
1.27
4
NOTES:
1. Dimensions are in inches.
2. Millimeter s ar e given for ge neral information onl y.
3. Package contour optional within BD and length BL. Heat s lugs, if any shall be included within this cylinder but shall not
be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
