BC846- BC850 tm NPN Epitaxial Silicon Transistor Features * Switching and Amplifier Applications * Suitable for automatic insertion in thick and thin-film circuits 3 * Low Noise: BC849, BC850 * Complement to BC856 ... BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol Ta = 25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage : BC846 : BC847/850 : BC848/849 80 50 30 V V V VCEO Collector-Emitter Voltage : BC846 : BC847/850 : BC848/849 65 45 30 V V V VEBO Emitter-Base Voltage 6 5 V V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C : BC846/847 : BC848/849/850 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units 15 nA ICBO Collector Cut-off Current VCB=30V, IE=0 hFE DC Current Gain VCE=5V, IC=2mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 90 200 VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 700 900 VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA VCE=5V, IC=10mA fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 NF Noise Figure : BC846/847/848 : BC849/850 VCE= 5V, IC= 200A RG=2K, f=1KHz 2 1.2 10 4 dB dB VCE= 5V, IC= 200A RG=2K, f=30~15000Hz 1.4 1.4 4 3 dB dB : BC849 : BC850 110 580 800 660 250 600 mV mV mV mV 700 720 mV mV MHz 6 pF pF * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation BC846- BC850 Rev. B 1 www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor August 2006 Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 Ordering Information Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions BC846AMTF BC846BMTF 8AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector 8AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC846CMTF 8AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC847AMTF 8BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC847BMTF 8BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC847CMTF 8BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC848AMTF 8CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC848BMTF 8CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC848CMTF 8CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC849AMTF 8DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC849BMTF 8DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC849CMTF 8DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC850AMTF 8EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC850BMTF 8EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC850CMTF 8EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector Note1 : Affix "-A,-B,-C" means hFE classification. Affix "-M" means the matte type package. Affix "-TF" means the tape & reel type packing. 2 BC846- BC850 Rev. B www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor hFE Classification 10000 IB = 400A IB = 350A 80 VCE = 5V IB = 300A hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 100 IB = 250A 60 IB = 200A IB = 150A 40 IB = 100A 20 1000 100 IB = 50A 10 0 0 4 8 12 16 1 20 10 Figure 1. Static Characteristic Figure 2. DC current Gain 10000 100 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) 1000 100 VCE(sat) 10 1 10 100 VCE = 2V 10 1 0.1 0.0 1000 0.2 IC[mA], COLLECTOR CURRENT fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz 10 1 0.1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE 0.8 1.0 1.2 1000 VCE=5V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 3 BC846- BC850 Rev. B 0.6 Figure 4. Base-Emitter On Voltage 100 1 0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE 100 www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor Typical Performance Characteristics BC846- BC850 NPN Epitaxial Silicon Transistor Mechanical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 4 BC846- BC850 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 BC846- BC850 Rev. B www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor TRADEMARKS