SFH 213
SFH 213 FA
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
SFH 213
SFH 213 FA
2011-10-20 1
Wesentliche Merkmale
• Wellenlängenbereich (S10%) 400nm bis 1100nm
(SFH 213) und 750nm bis 1100nm
(SFH 213 FA)
• Kurze Schaltzeit (typ. 5 ns)
• 5 mm-Plastikbauform im LED-Gehäuse
Anwendungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Schnelle Lichtschranken
Typ
Type
Bestellnummer
Ordering Code
Fotostrom, Ev=1000 lx, standard light A, VR = 5 V (SFH 213)
Photocurrent, Ee=1 mW/cm2, λ = 870nm, VR = 5V(SFH213FA)
Ip (μA)
SFH 213 Q62702P0930 135 (≥100)
SFH 213 FA Q62702P1671 90 (≥65)
Features
• Wavelength range (S10%) 400 nm to 1100 nm
(SFH 213) and 750nm to 1100nm
(SFH 213 FA)
• Short switching time (typ. 5 ns)
• 5 mm LED plastic package
Applications
• Industrial electronics
• For control and drive circuits
• High speed photointerrupters
2011-10-20 2
SFH 213, SFH 213 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage
VR
VR (t<2min)
20
50
V
V
Verlustleistung
Total power dissipation
Ptot 150 mW
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 213 SFH 213 FA
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 lx
VR = 5 V, λ = 870 nm, Ee = 1 mW/cm2
IP
IP
135 (≥100)
–
–
90 (≥65)
μA
μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max 850 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 …1100 750 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A 11 mm
2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area
L×B
L×W
1×11×1mm×mm
Halbwinkel
Half angle
ϕ±10 ±10 Grad
deg.
Dunkelstrom, VR = 20 V
Dark current
IR 1 (≤ 5) 1 (≤ 5) nA
Spektrale Fotoempfindlichkeit, λ = 870 nm
Spectral sensitivity
Sλ0.62 0.59 A/W
Quantenausbeute, λ = 870 nm
Quantum yield
η0.89 0.86 Electrons
Photon
SFH 213, SFH 213 FA
2011-10-20 3
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 870 nm
VO
VO
430 (≥ 350)
–
–
380 (≥ 300)
mV
mV
Kurzschlußstrom
Short-circuit current
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 870 nm
ISC
ISC
125
–
–
42
μA
μA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 20 V; λ = 850 nm
tr, tf55 ns
Durchlaßspannung, IF = 80 mA, E = 0
Forward voltage
VF1.3 1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance
C011 11 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 – 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
λ = 870 nm
TCI
0.18
–
–
0.1
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 870 nm
NEP 2.9 ×10– 14 2.9 ×10– 14
Nachweisgrenze, VR = 20 V, λ = 870 nm
Detection limit
D* 3.5 ×1012 3.5 ×1012
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 213 SFH 213 FA
W
Hz
------------
cm Hz×
W
--------------------------
SFH 213, SFH 213 FA
2011-10-20 4
Relative Spectral Sensitivity
SFH 213, Srel = f (λ)
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltage VO = f (Ee)
SFH 213 FA
Directional Characteristics
Srel = f (ϕ)
λ
OHF01034
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
Relative Spectral Sensitivity
SFH 213 FA, Srel = f (λ)
Total Power Dissipation
Ptot = f (TA)
λ
OHF01773
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
T
OHF00394
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
SFH 213
Dark Current
IR = f (VR), E = 0
V
OHF01026
R
R
Ι
0
4
10
3
10
2
10
10
1
pA
20 V 3010
SFH 213, SFH 213 FA
2011-10-20 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Cathode (Diode)
GEXY6260
Collector (Transistor)
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047)
Chip position
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.5 (0.020)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
2011-10-20 6
SFH 213, SFH 213 FA
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
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The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
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to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.