High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = 1700V IC90 = 42A VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M 1700 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 80 A ILRMS Terminal Current Limit 75 A IC90 TC = 90C 42 A ICM TC = 25C, 1ms 300 A SSOA VGE = 15V, TVJ = 125C, RG = 10 ICM = 100 A (RBSOA) Clamped inductive load VCES 1350 V PC TC = 25C 360 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 C C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 G C C (TAB) E TO-268 (IXBT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z High blocking voltage International standard packages Low conduction losses Advantages z z Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 2.5 ICES VCE = 0.8 * VCES VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 42A, VGE = 15V, Note 1 (c) 2008 IXYS CORPORATION, All rights reserved V 50 A 1.5 mA TJ = 125C TJ = 125C Applications: V 5.5 z z z z z 2.7 Low gate drive requirement High power density 100 nA 2.8 V Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches V DS98710C(10/08) IXBH42N170 IXBT42N170 Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfS 24 IC = 42A, VCE = 10V, Note 1 TO-247 (IXBH) Outline 32 S 3990 pF 225 pF Cres 70 pF Qg 188 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 29 nC Qgc 76 nC td(on) 37 ns 139 ns 340 ns 665 ns tr td(off) tf td(on) IC = 42A, VGE = 15V, VCE = 0.5 * VCES Resistive Switching times, TJ = 25C IC = 42A, VGE = 15V VCE = 850V, RG = 10 36 ns tr Resistive Switching times, TJ = 125C 188 ns td(off) IC = 42A, VGE = 15V 330 ns VCE = 850V, RG = 10 740 ns tf RthJC RthCS 0.35 (TO-247) C/W C/W 0.25 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. VF IF = 42A, VGE = 0V 2.8 trr IF = 21A, VGE = 0V, -diF/dt = 100A/s IRM VR = 100V V 1.32 s 36 A Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH42N170 IXBT42N170 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 300 90 VGE = 15V 13V 11V 80 240 9V 210 60 IC - Amperes IC - Amperes 70 50 40 7V 30 150 120 9V 60 10 7V 30 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. Dependence of VCE(sat) on Junction Temperature 90 18 20 1.7 VGE = 15V 13V 11V 80 VGE = 15V 1.6 1.5 VCE(sat) - Normalized 70 IC - Amperes 11V 180 90 20 60 9V 50 40 7V 30 20 I C = 84A 1.4 1.3 1.2 I C = 42A 1.1 1.0 0.9 I 0.8 5V 10 C = 21A 0.7 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 125 150 160 5.5 TJ = 25C 5.0 140 TJ = - 40C 25C 125C 120 IC - Amperes 4.5 VCE - Volts VGE = 15V 13V 270 4.0 I 3.5 C = 84A 3.0 100 80 60 42A 40 2.5 2.0 20 21A 0 1.5 5 6 7 8 9 10 11 12 VGE - Volts (c) 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGE - Volts IXYS REF: B_42N170(7N)10-07-08 IXBH42N170 IXBT42N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 55 120 TJ = - 40C 50 110 100 45 TJ = 25C 80 35 IF - Amperes g f s - Siemens 90 25C 40 125C 30 25 20 TJ = 125C 70 60 50 40 15 30 10 20 5 10 0 0 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 9. Gate Charge 2.6 2.8 3.0 3.2 Fig. 10. Capacitance 16 10,000 VCE = 850V 14 12 Capacitance - PicoFarads I C = 42A VGE - Volts 2.4 VF - Volts IC - Amperes I G = 10mA 10 8 6 4 Cies 1,000 Coes 100 Cres 2 f = 1 MHz 10 0 0 20 40 60 80 100 120 140 160 180 0 200 5 10 15 20 25 30 35 QG - NanoCoulombs VCE - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 110 40 1.00 100 90 Z(th)JC - C / W IC - Amperes 80 70 60 50 40 30 20 10 0 200 0.10 TJ = 125C RG = 10 dV / dt < 10V / ns 400 600 800 1000 1200 1400 1600 1800 VCE - Volts IXYS reserves the right to change limits, test conditions and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBH42N170 IXBT42N170 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 360 360 RG = 10 320 VGE = 15V VCE = 850V I C = 84A t r - Nanoseconds t r - Nanoseconds 280 240 200 160 I C = 42A 320 RG = 10 280 VCE = 850V VGE = 15V TJ = 125C 240 200 160 TJ = 25C 120 80 120 40 80 0 25 35 45 55 65 75 85 95 105 115 125 20 25 30 35 40 45 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 I C = 84A 400 80 300 60 I C = 42A 800 20 20 25 30 35 40 45 50 340 I C = 42A 600 320 500 300 25 35 45 RG = 10, VGE = 15V 440 1200 420 1100 tf 1000 TJ = 125C, VGE = 15V 400 900 360 800 340 700 320 600 300 TJ = 25C, 125C 300 45 50 55 60 85 95 105 115 260 125 65 70 75 IC - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 80 85 1800 td(off) - - - - 1600 1400 VCE = 850V 900 1200 800 1000 I C = 42A 700 800 I 600 C = 84A 600 500 400 260 400 200 240 300 280 400 40 75 t d(off) - Nanoseconds 380 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - VCE = 850V 35 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 1100 30 55 TJ - Degrees Centigrade 1200 25 280 I C = 84A 300 55 1300 20 360 700 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 500 85 td(off) - - - - RG - Ohms 1000 80 RG = 10, VGE = 15V 400 40 100 15 75 VCE = 850V t f - Nanoseconds 120 500 10 70 t d(off) - Nanoseconds VCE = 850V 200 65 380 tf 140 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125C, VGE = 15V 600 60 900 160 tr 55 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 800 700 50 IC - Amperes 0 10 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: B_42N170(7N)10-07-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.