This matesial and the Information herein is ihe property of Fuyi Electnc Co.Ltd, They shall be neither mepmoduced, copied len. of disclosed in any way whatsoever for the use of any third partynor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Lid. SPECIFICATION Device Name: Power Integrated Module Type Name : TMBRZO0OSA0E60A Spec. No. : MS6M 0430 Fuji Electric Co. , Ltd. Matsumoto Factory DATE . NAME | APPROVED maa Ae Sosy DRAWN TY -2e - HY 7, Oakes CHECKED! May -27 - YW? Fuji Electric Co Ltd. MS6M 0430 Ko . Ba eet | OWG.NO, Tpets HO4--004-07Revised Records | | Classi- Applied Date fication Ind. Content date Drawn Checked Aporoved Haye 75-" 99| enactment | Issued . Myer f date y Zityde This materfal and the information herein is the property of Fuji Elecine Co.Lid They shail be neither reproduced, copied lent, or disclosed in 4ny way whatsoever for the use of any Inird partynor used for the manufacturing purposes without the express written consent of fuji Electric Co. Ltd, Fuji Electric Co Ltd. T 2 MS6M 0430 H04-004-06This material and tha Information hereln Is the property of Fuji Elacine Co.Ltd. Thay shal be neither mproduced, copied fens, or disclosed in any way whalsoever for ihe use of anv Ihird partynor used far the manufacturing purposes without the exprass weitien consent of Fuji Electric Co, Lid, 7TMBRZO0SA060A 1. Outline Drawing ( Unit : mm ) 107.541 9320.3 W437 1t.43 |] 4S] 38 loc d= $5.24 4-66.41 40.3 2-05.5 10.3 4541 9340.3 9.12 11.43 BNi0.43 00.43 fds 2143 142.93 2.510.1 92.140.1 1.15 40.2 [g0.4 ' 3 nis + glo wo ~ 4) = SECTION A-A a y =| o| | 2 ~ m= [-_]shows theoretical dimension. 2. Equivalent circuit { Converter ] ( Brake J { Inverter ] Thermistor } 24P) 22 (P1) ; ; 6 o > 18 a nie oC an 14R) 2(5) iT) IS(En | v7 Fe) | 15) J 7B) L4 {Ch} = iu} P44) 4 6 k -_l IK 13 (Gx) 12 (Gy) iiGz) | o 23 (N) 24 (NL) 10(En) 1 i MS6M 0430 $f 10-4 HO4-004-03 OWGNO, Fuji Electric Co Ltd.This material and the infor matidn herein if the property of Fuji Elecing Co.Ltd They shall be neither @produced, copied lent, of disclosed in any way whatsoever for the use of any third partynor used for the manufacturing purposes without the express written consent of Fuji Electric Co, Ltd, 3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified) Items Symbols Conditions Retin Units Collector-Emitter voltage CES 600 v ,, |Gate-Emitter voltage GES +20 Vv 2 Ic Continuous 20 A = Collector current Icp las 40 A ~ -Ie 20 A Collector Power Dissipation Pc 1 device 80 Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES +20 v 4 Collector current Ic Continuous 20 A a Icp los 40 A Collector Power Dissipation Pc 1 device 50 Repetitive peak reverse Voltage (Diode) VRRM 600 V Repetitive peak reverse Voltage VRRM 800 v s Average Output Current lo S0H2/G0Hz 20 A g sine wave |Surge Current (Non-Repetitive} IFSH Tj=150, 10ms 210 A - Tt (Non-Repetitive} It half sine wave 22] As Junction temperature Tj 150 c Storage temperature Tstg -40~ +125 cc Isolation |between terminal and copper base"! Viso AC : imin. 2500 Vv voltage lbetween thermistor and others ? 2500 v Mounting Screw Torque 3.5 Nom (#1) All terminals should be connected together when isolation test will be done (#2) Terminal 8 and G should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. (#3) Recommendable Value : 2.5~3.5 N+m (M5) Fuji Electric Co.Ltd. 2 MS6M0430 44 HO4-004-03This material and tha infarmation heraln Is the property of Fujl Electac Co.Lid They shall be neiihe: reproduced. copied tent. ar disclosed in any way whatsoever far the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Lid 4! Electrical characteristics ( at Tj= 25C unless otherwise specified) Characteristics Items Symbols Conditions min. typ. Max. jUnits Zero gate voltage Ices |VcoE = OV, VCE - 600 1.0 mA Coilector current Gate-Emitter leakage current IGES |CE = O, VGE = +20 200 nA Collector-Emitter VeE{sat) [YGE = 15 , chip 1.8 v saturation voltage Ic = 20 A |terminal 1.95 2.4 Input capacitance Cies |VGE= OV, VOE= 10 3000 pF v f = 1 MHz 4 Turn-on time ton fec= 300 V 0. 45 1.2 tr Ic = 204A 0. 25 0.6 triy) |GE = +15 0.08 us Turn-off time toff {RG = 82 2 9. 40 1.90 tf 0.05 | 0.35 Forward on voltage VE IF = 20 A |chip 1.8 terminal 1,95 2.6 Reverse recovery time trr IF = 20 A 300 ns vee eat voltage 1czs |GE= OV, VCE= 600 1.0 | mA Gate-Emitter leakage current IGES {VCE = QV, VGE = +20 200 nA Collector-Emitter VCE(sat) [VGE = 15 V, jchip 1.8 | Saturation voltage Ic = 20 A {terminal 1.95 2.4 E Turn-on time ton |Yec= 300 V 0.45 | 1.2 tr Ic = 20 A Q. 25 0.6 us Turn-off time toff |WGE = 215 V 0. 40 1.0 tf RG = 120 8 0.95 | 0.35 Reverse current IRRM IWR = 600V 1.0 gwA 3 Forward on voltage VFM IF = 20 A [chip L.1 = terminal 1.2 1.5 S Reverse current IRRM IVR = 800 V 1.0 mA |Resistance rR {T= 25% 5000 Q : T =100T 465 495 520 B value B F = 25/50C 3305 3375 3450 K Thermai resistance characteristics Characteristics Items Symbols Conditions min. typ. Max. [Units Inverter IGBT 1.56 Thermal resistance Inverter FWD 3. 00 (1 device} Rth(j-c) ]Brake IGBT 2.50 |C/W Converter Diode 2. 00 Contact Therma! resistance Rthic-f) [with Thermal Compound * 0. 03 ciw *% This is the value which is defined mounting on the additional cooling fin with thermal compound. Fuji Electric Co.Ltd. OWG.NO. - MS6M 0430 HO4-004-03This material anc the Information harein is the property of Fuji Elecinc Co Lid They shall be neither mprmduced, copied sent, of disclosed in any way whatsoever for the use of any Ihird partynor used far the manclacturing pur pases without ihe sxpress written consent af Fuji Electric Co. Ltd, . Indication on module (@%2/-#A) Fuso 7MBR20SA060A Cl] a soe Co Lot No. / \, Place of manufucturing (cade) 7. Applicable category GBFASaR) This specification is applied to Power Integrated Module named 7MBR2OSA060A. ARATE U-Boat TMBR2O0SA0G60A (BATS, B. Storage and transportation notes (22 : BR Loi Baw) The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75%. Hin: BWREMBAELY, ( 5~35C, 45~75%) Store modules in a place with few temperature changes in order to avoid condensation on the module surface, SBRRBER(EORALL, (%a-NRHMEBLAVO SL) Avoid exposure to corrosive gases and dust. Bit A2NEt Se, BROS BARS. Avoid excessive external force on the module. SLBA DAG hI +OEBT4CL EL, Store modules with unprocessed terminals Yas Om LARA LORE CREDA LE, Do not drop or otherwise shock the modules when transporting Ron Oi Ms Re SO. BFAURO LAE, DWGNO. Fuji Electric Co Ltd. MS6M 0430 9 fad H04~-004-03This materiat and tha informatian haveln Is the property af Fuji Elecine Co.Ltd. They shall be neither mproduced, copied tent. or disclosed in any way whatsoever for the use of any third partynor used for the manufacturing purposes without the express written conseni of Fuji Electric Co. Ltd. { Inverter J Inverter } Collector current vs Collector-Emitter voltage Collector current vs (ollector-Emitter voltage Tr 250 (yp.) Ty= 125C (typ. } 70 7 1 r T S T 7 T 79 T T 7 T r T T T T y GE ON 159 iy | GE 700 By a | 60h . 60 Le Lage 4 < 50h = 50b 2 r a . OR 40h = . w - 2 = i 5 boaGh E 3ch . 5 a Tf 5 Ff 2 20h 3 20h = of 3 = 2 b 10h 1Ge 0 4 0 1 t : 0 i 2 3 4 3 0 1 2 3 4 a Collector Emit car +olta ge VO {VJ Collector - Emit ter voltage e [} { iowerter } [ Inverter J Collector current vs Collector-Ewitter voltage Collector Emitter voltage vs Gate Geitter voltage WOEFISY < typ.) Tres (typ) 70 . 1 7 1 : : + 19 ne ee . TiS Tis 125% 1 , bob _- a L J L , = BE msc ~ meet = 30F - 4 5 L 4 =~ L J L 4 3 2 BL a ee a 4 g , 5 3 : gop ~ f 3 Soak 4 es Ff 4 z+ 2 & 2 20h a 4 1 r 7 3 [ 5 5 wo 7 3 2b 10, 4 = b 4 3 L a 2 Ob a a dl dd a a 9 J 2 a 4 3 io 14 20 25 Collector - Emit ter voltage Oa [(} Cate - Ewitter voltage VE [( ] ( Inverter } [ Inverter ] Capacitance ys Collector-Emitter voltage (typ.} Dynamic Gate charge typ.) YGEFON, f= MHz, Tj 250 Yoo=300, 1ctQA TH 25C L000 1 T 1 1 T T 1 500 v 7 +r 1 r 2a . 4 = 400 - q io ~ ~ , Cies o | 7 : = = 3 1 = sf wo 415 z & ~ 1006 4 3 L ] > = 2 | b > q = 20 - 414 = . = : b E a a q . 3 on = eo} - 3 o Ures 3 L 4 100 4 1 4 i 1 1 G n 1 i | 2 a 0 3 10 La 29 25 30 3a 0 34 i100 159 20 Csllector - &m:: -er voltage VCE Cf J Gate char ge Qe [oj os . = 7 Fuji Electric Co,Ltd. 2 MS6M 0430 10.00 . Oo HO4-004-03This material and the Inlormation hareln Is the property of Fup Elecine Co.Ltd They shall ba neither rearoduced, copied { Inverter ] { [nerter J Switching time vs Collector current (typ) Switching time vs Collector airrent (typ) VooSB00, VQE=t 15, Re WO, Te 25 Voos300, VGE=+ 15, Re 820 , Tj= 125 99.00 pe YI 0 po 2 [ ren fF tere _ 1 g g | Bf ee FT tett _ ton 3 ee . = 4 ef - - + | 3 g 5 tot 4 5 lab u 4 5 t ] = t 1 ae j 1 . ft z r 7 Fy 4 a , 1 u F S aad 5 ft = tf 2 = 10 1 1 1 i 4 1 1 vf 4 10 1. Ll 1 4 4 Lt 1. 1 0 10 ao yO 0 30 o 10 a 3 40 oO Collector current : [ce {A ] Collector wirrent : ic [A ? Ctmerter] { Inverter ] Switching ime vs. Cate resisunce (yp) Switching loss vs Collector current (typ) _ Voce O00 , ie =20A, VCE= Hav, Tj= 2570 Yeo<3Q0, GE=+ 15, Re-&2 0 5000 eg ay s s . 3.0 ya ot 2 4 -~ ze y 3 z 7 2 - ety Z = Eon ( 125 y 385 L = Zoff ( 125% } 20 1000 F Fe 9 = ag S b Say rE . 4 geo = L s fon ( FC } eeu pa Po 22 2 3 t 4 gBw L = 2a ni 2 EC 5 = Fore ( 25% ) ees = = Ree ooh > Oo r Bae E . 7 33 SE : ase L ~ &5? = L # fer (150; Gow = 2 2xe u u tes - L < | <a a - = a * a Err (280 4 Bz 10 Mou. 1 4 1 4 | 30 5 1@ 300 50 60 Gate resistance : Rg | Q } : Ie {aA ) Cimerter ] { Eoverter J Switching loss va Gate resistance (typ) Reverse bias safe operating area Voc <3 00 V. 10= 204, VGE=H 5V. T= 125C +VGEi5, VES 15% Rg2= 820 , T)S 1250 4 + Ty +r T a T T 7 3L Foe | ob J < c L a o2F z 0 7 c z B 3 2 i 2 3g 2 yh = 0h 4 = 3 = i an c po 1 0 1 L w a0 100 300 0 200 400 600 ao Cite resistance : Rg | Q } Collector - Emitter voltage : WE ( J S. on. ji i 3 MS6M 043 wa Fuji Electric Co.Ltd. 2 430 : & 10> ~- HO04~-004-03This material and the information herein is ine property of Fuji Electnc Co.Lid They shall be neither momduced, copied tent, of disclased in any way whatsoever for the use of any third partynor used for the manufac turing purposes without the express wrillen consent of Fuji Electric Co. Ltd, ( Inverter ] [ Inverter ] Forward current vs Forward om voltage (typ ) Reverse recovery characteristics (typ ) . eos JO, WGEF+ 15, Reto iG r T 7 r r 300 r i t T T r T T 6 L- Ty aac J lr 1 Tj-7s L q ~ a # L. 4 < FOF 4 z UO Ee C28 q | bo [ , SG | ~ ia = L 4 gob J = j LT [ 2 Porr ( 25%. } d = & g RE = wb 4 2c r 2 L co z zs 1 20 b J et i z3 ol b ey Z as 10 4 z 3 4 t ft 5 [L 4 | 1 1 1 4 i 1 | 0 I z 3 0 10 20 w 40 4] Forward on voltage WoT j Forward current : IF [A] [ Converter } Forward current vs Forward mm voltage (typ ) 0 r T r T r T T T r inte O- _ = FE 4 = 40 4 = a sok 4 5 a 2 4 EOF a c aa 4 job 4 0 1 4 t a0 04 O# 1.2 16 20 Forward on vo | tage WME J [ Thermi stor } Transient thermal resistance Temperature characteristic (typ. ) 10 (| ar or yp 200 oe oo [ , 100 7q ea r 1 j 7 rs) | FALL inverter] [ 1 3 a 2 = wk 4 i E 7 2 2 r 4 z z tf 4 5 = 2 % z 2 Ik 4 z 2 r 7 i : | 2 4 = L G1 pl oo it Ab oO 1 { 1 J 1 n t 1 L Jt 0 001 O.a1 a1 I 6 -4 20 9 2 840) 60) BO 6100 120 140 160 18 Pul se width Pe ses} Temperature [ < } S: a e . = 9 Fuji Electric Co.Ltd. & MS6M 0430 4 9 a a. HO4-004-03This matecial and the Information herein Is the property of Fuji Electne Co Lid They shall be neither rmepmduced. copiad lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufac wring purposes wilhoutl the express written cansent of Fyji Electric Co. kid. { Brake ] { Brake ] Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tj= 250 (typ.) Tj= 125 (typ.) 50 1 oe 7 1 : 50 a 7 1 : 1 : veh. 2015V iy 40 - 4 ag = i J = Y = 30h 4 = 30} < lr 1 = rT o o 5 E 3 20h 4 22h. - 3 i gf RT 3 10- 4 3 1- - 0 1 1. I 1 1 1 0 st 1. I nm ! 1 0 1 2 a 4 5 o ! 2 3 4 3 Gollector - Emitter voltage Yoe ( } Collector - Emitter voltage WCE [] i Brake J [ Brake j Collector current vs. . Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage ; VGE=15 0 (typ.) Tie 25 {typ.} uu r T r T : 1 T By a rt L J : 4 L 4 OH - r 1 40 F 4 *= gL. - --4 z | | ws L q = 2 L 4 . L ~ 30F . BR --- - 4 z | 1 c r 7 = r 1 2 > 2 4 4 L 3 20+. 4 3S 4b mo 4 5 z 8 r 4 1 L J 3 b r fe 404 4 a = o 10 F 7 3 2 - * te: 20A 4 | | ie [ ford 7 0 1 ! 1 a q J 2 3 4 5 iG 15 20 25 Collector - Emitter valtage WCE f } Gate - Emitter voltage WE oC j { Brake } { Brake } Capacitance vs. Collector-Emitter voltage {typ. } Dynamic Gate charge ({typ.} VGE=G, f= Miz, Tj= 25C Veo=300, Ic=20A, Fj= 25C 3000 t T T T T T 500 T tT Tr T r T * T T T 23 & 4 = 400 b 425 = Cies ~ e 3 = 1 | 5 1000 4 = a j . 300 - noe 4i5 z : s 3 g a | 8 y = # L 5 ~ 4 3 200 - 4 . 2 ee 4 = L 4 z Z = & wee + Tors g a eee D> 180 fb s3 0 2 LPes a a os IG0}- 4 = Z a io 4 2 - 4 a b 4 50 [ i 1 1 L t rl 1 0 4 1 1 x i i 9 0 3 10 Is 20 25 39 35 0 20 40 60 80 100 i20 Collector - Emitcer veltage WCE ( ] Gate charge de (nt } o I as . = 10 : Fuji Electric Co_Ltd. 2g MS6M 0430 a = 10 H04-004-03