Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 3 1Publication Order Number:
2N5638/D
2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
N–Channel – Depletion
N–Channel Junction Field Ef fect Transistors, depletion mode (Type
A) designed for chopper and high–speed switching applications.
Low Drain–Source “ON” Resistance:
RDS(on) = 30 for 2N5638
RDS(on) = 60 for 2N5639
Low Reverse Transfer Capacitance
Crss = 4.0 pF (Max) @ f = 1.0 MHz
Fast Switching Characteristics
tr = 5.0 ns (Max) (2N5638)
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDS 30 Vdc
Drain–Gate Voltage VDG 30 Vdc
Reverse Gate–Source Voltage VGSR 30 Vdc
Forward Gate Current IGF 10 mAdc
Total Device Dissipation@ TA = 25°C
Derate above 25°C
PD310
2.82 mW
mW/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temp Range TJ–65 to +135 °C
INPUT
(SCOPE A)
OUTPUT
(SCOPE B)
PULSE
GENERATOR
VDD = 10 Vdc
0.1 F
0.001 F
50 Ohms
50
RL+–
TO
50 OHM
SCOPE A
TO
50 OHM
SCOPE B
RLVDD
ID(RDS(on) 50)
50
50
1.0 k
SCOPE
TEKTRONIX 567A
OR EQUIVALENT
Figure 1. Switching Times Test Circuit
VGS(on)
VGS(off)
10%
10%
90%
90%
td(off) tr
td(on)
tf
Device Package Shipping
ORDERING INFORMATION
2N5638RLRA TO–92
TO–92
CASE 29
STYLE 5
2000/Tape & Reel
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N5639 TO–92 5000/Box
2N5369RLRA TO–92 2000/Tape & Reel
Y = Year
WW = Work Week
MARKING DIAGRAMS
2N
5638
YWW
2N
5639
YWW
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1 DRAIN
2 SOURCE
3
GATE
2N5638, 2N5639
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) V(BR)GSS 35 Vdc
Gate Reverse Current (VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C) IGSS 1.0
1.0 nAdc
µAdc
Drain–Cutoff Current
(VDS = 15 Vdc, VGS = –12 Vdc) 2N5638
(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C) 2N5638
(VDS = 15 Vdc, VGS = –8.0 Vdc) 2N5639
(VDS = 15 Vdc, VGS = –8.0 Vdc, TA = 100°C) 2N5639
ID(off) 1.0
1.0
1.0
1.0
µAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (Note 1.) 2N5638
(VDS = 20 Vdc, VGS = 0) 2N5639 IDSS 50
25
mAdc
Drain–Source “ON” Voltage
(ID = 12 mAdc, VGS = 0) 2N5638
(ID = 6.0 mAdc, VGS = 0) 2N5639
VDS(on)
0.5
0.5
Vdc
Static Drain–Source “ON” Resistance
(ID = 1.0 mAdc, VGS = 0) 2N5638
2N5639
RDS(on)
30
60
SMALL–SIGNAL CHARACTERISTICS
Static Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz) 2N5638
2N5639
RDS(on)
30
60
Input Capacitance (VDS = 0, VGS = –12 Vdc, f = 1.0 MHz) Ciss 10 pF
Reverse Transfer Capacitance (VDS = 0, VGS = –12 Vdc, f = 1.0 MHz) Crss 4.0 pF
SWITCHING CHARACTERISTICS (VDD = 10 Vdc, VGS(on) = 0, VGS(off) = –10 Vdc, RG’ = 50 . See Figure 1 on page 1)
Turn–On Delay Time ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639 td(on)
4.0
6.0 ns
Rise Time ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639 tr
5.0
8.0 ns
Turn–Off Delay Time ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639 td(off)
5.0
10 ns
Fall Time ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639 tf
10
20 ns
1. Pulse Width 300 µs, Duty Cycle 3.0%.
2N5638, 2N5639
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3
PACKAGE DIMENSIONS
CASE 29–11
ISSUE AL
TO–92 (TO–226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
2N5638, 2N5639
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4
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2N5638/D
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