4
C1
B2 E2
E1 B1 C2
pin #1
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collec t or-Emitter Volt age 45 V
VCES Collec t or-Base Volt age 50 V
VCBO Collec t or-Base Volt age 50 V
VEBO Emi tter-Base Voltage 6.0 V
ICCollect or Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperat ure Range -55 to +150 °C
2001 Fairchild Semiconductor Corporation Rev.A1
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BC847S
PDTotal Device Dissipation
Derate above 25°C300
2.4 mW
mW/°C
RθJA Thermal Resis t ance, Junc t i on to A mbient 415 °C/W
BC847S
SC70-6
Mark: 1C
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
BC847S
BC847S
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)CEO Collector-Emit ter Breakdown Voltage IC = 10 mA, IB = 0 45 V
V(BR)CES Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 50 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 50 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150°C15
5.0 nA
µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 2. 0 mA, V CE = 5. 0 V 110 630
VCE(sat)Collector-Emit t e r S aturation Voltage IC = 10 mA , IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA 0.25
0.65 V
V
VBE(on)
Base-Emitter ON Voltage IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V0.58 0.7
0.77 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 20 mA , VCE = 5.0,
f = 100 mHz 200 MHz
Cobo Output Capacitance VCB = 10 V, f = 1.0 MHz 2.0 pF
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Co llector-E mitter Sa turati on
Volt age vs Collector Cu rrent
0.1 1 10 100
0.05
0.1
0.15
0.2
0.25
0.3
I - COL L ECTOR CURRENT (mA)
V - COLLECTOR-EM ITTER VO LTA GE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β = 10
Ty pical Pu ls ed C ur r ent Ga in
vs Co ll ect or Curr e nt
0.01 0.03 0.1 0.3 1 3 10 30 100
0
200
400
600
800
1000
1200
I - COLLECTOR CURRENT ( mA)
h - TYPI CAL PUL SED CUR REN T G AIN
C
FE
125 °C
25 °C
- 4 0 °C
V = 5.0 V
CE
4
Typical Characteristics
Inp ut a nd Ou t put C apa cita nce
vs Re ver se Bi as Vo lt age
0 4 8 121620
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CAPAC ITAN CE (pF)
f = 1.0 MHz
Cob
C
te
Contours of Constant Gain
Bandwidth Product (f )
0.1 1 10 100
1
2
3
5
7
10
I - COLLECTO R CURRENT (mA)
V - COLLECTOR VOLTAGE (V)
C
17 5 MHz
T
CE
15 0 MHz
12 5 MHz
75 MHz
10 0 MHz
Base- Emitter S aturati on
Volt age vs Collect or Curr en t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COL L ECTO R CURRENT (mA)
V - COLLEC TOR-EMITTER VO LTA GE (V)
C
BESAT
β = 10
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 40
0.2
0.4
0.6
0.8
1
I - CO LL ECTO R CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
V = 5.0 V
CE
25 °C
- 40 °C
125 °C
Coll ector-Cutoff Cur re nt
vs Amb ient Temp erature
25 50 75 100 125 150
0.1
1
10
T - AMBIE NT TE MP ERATURE ( C)
I - COLLECTOR CU RR ENT (nA)
A
CBO
V = 45V
°
CB
No rmalized Collecto r-Cutoff C urr en t
vs Ambient Te mperat ure
25 50 75 100 125 150
1
10
100
1000
T - A MBIENT TEMPER ATUR E ( C)
CH AR AC TER ISTIC S R ELATI VE TO VALU E AT T = 25 C
A
A
°
°
BC847S
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
NPN Multi-Chip General Purpose Amplifier
(continued)
Power Dis sipati on vs
Am bi en t Te mpe rature
0 25 50 75 100 125 150
0
100
200
300
400
500
TEMPERATURE ( C)
P - POWER DIS SIPATION (mW)
º
D
SC70-6
Wide band Noise Frequency
vs Source Resistanc e
1,000 2,000 5,000 10,000 20,000 50,000 100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
N F - NO IS E FI G U RE (d B)
V = 5.0 V
BA NDW IDTH = 15 .7 kHz
CE
I = 10 µA
C
I = 100 µA
C
SΩ
I = 30 µA
C
BC847S
Noise Figure vs Frequency
0.0001 0.001 0.01 0.1 1 10 100
0
2
4
6
8
10
f - FRE QU E NC Y (M Hz)
NF - NOIS E FIGURE (d B)
V = 5. 0V
CE
I = 200 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 500 Ω
C
S
I = 100 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 5.0 kΩ
CS
©2001 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user .
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improv e
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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