Rugged Power MOSFETs File Number 2006 Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V fos(on) = 0.3 and 0.40 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds lf Linear transfer characteristics @ High input impedance The IRF350R, IRF351A, IRF352R and IRF353R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA metal package. Absolute Maximum Ratings IRF350R, IRF351R , IRF352R, IRF353R N-CHANNEL ENHANCEMENT MODE D 92Cs-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE GATE 92cs-3780! JEDEC TO - 204AA Parameter IRF350R IRF351R IRF352R IRF353R Units Vos Drain - Source Voltage 400 350 400 350 Vv Vocr Drain - Gate Voltage (Ras = 20 KQ) 400 350 400 350 Vv lb @ Te = 25C Continuous Drain Current 15 16 13 13 A lp @ Tc = 100C Continuous Drain Current 9.0 9.0 8.0 8.0 A lom Pulsed Drain Current @ 60 60 52 52 A Vas Gate - Source Voltage +20 v Pp @ Tc = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) w/C Eas Single Pulse Avalanche Energy Rating @ 700 mj Ti Storage Temperature Range 785 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-57Rugged Power MOSFETs IRF350R, (RF351R, IRF352R, IRF353R Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) Turn-on speed is substantially controlled by Ls + Lo. Par. Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF350R = IRF352R 400 _ _ v Ves = OV IRF351R = IRF353R | 22 - _ lo = 250A Vesum Gate Threshold Voltage ALL 20 _ 40 v Vos = Ves, Ip = 250 A less Gate-Source Leakage Forward ALL _ _ 100 nA Vas = 20V less Gate~Source Leakage Reverse ALL _ -100 nA Ves = -20V loss Zero Gate Voltage Drain Current _ _ 250 HA Vos = Max. Rating, Ves = 0V ALL = | 1000 | wA | Vos = Max. Rating x 0.8, Vos = OV, Te = 125C loom On-State Drain Current @ IRF350R ) 45 _ _ IRF351R Vos > loton X Roston max. Vas = 10V IRF352R | 44 _ _ A IRF3S3R Rosiom Static Drain-Source On-State IRF350R Resistance IRF35iR[ 0.25 0.3 Q _ _ IRF352R Ves = 10V, ln = 8.0A inFssan| ~ | 93 | o4 | 2 | Gis Forward Transconductance @ ALL 8.0 10 __| S(@)_| Vos > Iptom X Rasionmar, lo = 8.0A Cis Input Capacitance ALL = 2000 = pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL _ 400 = pF_ See Fig. 10 Cras Reverse Transfer Capacitance ALL = 100 = pF taton Turn-On Delay Time ALL = = 35 ns Von = 180V, Ip = 8.0A, Zo = 4.70 t Rise Time ALL = a 65 ns See Fig. 17 tarot Turn-Off Delay Time ALL 150 ns (MOSFET switching times are essentially 4 Fall Time ALL _ _ 75 ns independent of operating temperature.) Qs, Total Gate Charge ALL _ 79 120 nc Ves = 10V, Ip = 18A, Vos =: 0.8 Max. Rating. {Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL 38 nc essentially independent of operating Q G ~ RA et? temperature.) Qos jate-Drain (Miller) Charge ALL = 41 = nc Lo Internal Drain Inductance ALL ~ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device > source and gate pins inductances and center of die. Lo Ls Internal Source inductance ALL _ 12.5 - nH Measured from the source pin, 6 mm c us (0.25 in.) from header and source bonding pad. vac a2ees Thermal Resistance RunJC Junction-to-Case ALL = = 0.83 c/w RmCS Case-to-Sink ALL = 0.1 = C/W_| Mounting surface flat, smooth, and greased. ReJA _Junction-to-Ambient ALL = _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (RF350R ) _ 15 A Modified MOSFET symbol (Body Diode) IRF351R showing the integral IRE352R 3 A reverse P-N junction rectifier. IRF353R| ~ | ~ | | Ism Pulse Source Current IRF350R;} __ _ 60 A . (Body Diode) IRF351R IRF352R orcs ane iRF358R| ~ | | 5? | A Vsp Diode Forward Voltage IRF350R = = = IRF351R} 1.6 Vv Te = 25C, Is = 18A, Vos = OV IRF352R = = = iRF353R | _ 1.5 Vv Te = 25C, Is = 13A, Vas = OV ty Reverse Recovery Time ALL _ 1000 - as Ty = 150C, Ir = 15A, die/dt = 100A/us Qaa Reverse Recovered Charge ALL 6.6 = ue Ty = 150C, le = 15A, dle/dt = 100A/yus ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. @ Ts = 25C to 150C. @ Pulse Test: Pulse width < 200us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = 40V, starting Ty = 25C, L = 5.66mH, Ros = 502, Ipoax = 15A. See figures 15, 16. 6-58Rugged Power MOSFETs Zenactt/ Rypyc. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) Ip, DRAIN CURRENT (AMPERES) (p, ORAIN CURRENT (AMPERES) 0.01 15 92 5 80 us PULSE TEST Vg * 5.5V 4.0V 3.5V 0 $0 100 180 200 250 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS} 300 Fig. 1 Typical Output Characteristics 80 ws PULSE TEST a 1 2 3 4 5 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics SINGLE PULSE {TRANSIENT THERMAL IMPEDANCE} 104 2 5 43 2 tp, DRAIN CURRENT (AMPERES) 19-2 2 IRF350R, IRF351R , IRF352R, IRF353R 80 ss PULSE Vos > !D(on) * Roston) max. Ty = +1250C Ty = 250C ip, QRAIN CURRENT (AMPERES) Ty = -550C 0 1 2 3 4 5 6 ? 8 Vg, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics 100 TION IN AREAISL IRF350A, 1R BY Rosion) 50 IAF352R, 20 1R 10 IRFIS2R, 3A 5 2 10 Te 25C 9.5 [~ 1) = 1509 MAX Ringe = 083 K W | 0.2 -- SINGLE PULSE IRF3S0R, 2 10 2 5 10 20 50 100 200 $00 Vps. DRAIN TO SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area a4 | 1. DUTY FACTOR, 0 = i: 2. PER UNIT BASE = Rinyc = 0.83 DEG. C/W 3. Tym - Te * Pom Ztnucit. wo-1 2 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-59Rugged Power MOSFETs IRF350R, IRF351R, IRF352R, IRF353R 20 3 ~~ Ty = -859C 7: on 12 Jet ~ Ty = 150C 3 Ca Ty = 25C Sts, TRANSCONDUCTANCE (StEMENS) 4 Vos > !ofon) * Raston) max. Ipg. REVERSE DRAIN CURRENT {AMPERES} nN 80 1s PULSE TEST 1.0 a 4 8 12 16 20 0 1 2 3 4 tp, ORAIN CURRENT (AMPERES) Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 125 a2 1.18 2 a 2 wo a Vos = 10V 0.85 06 Ip = 5.54 BV oss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NGRMALIZEO} Rpg (on). DRAIN 70-SOURCE ON RESISTANCE (NORMALIZED) 0.75 02 -40 0 40 80 120 160 -40 0 40 80 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 -- Normalized On-Resistance Vs. Temperature 4000 2 Ves 0 1 t= 1MHz Vos = 80V Vos = 200V root 2000 Vg = 320 Cigs = Cys + Ogg, Cos SHORTED 1600 Crag = Cog Cys C, Cou * Cont ce me Cag + Cog C, CAPACITANCE (9F) Vg. GATE-TO-SOURCE VOLTAGE (VOLTS) Ip = 18A FOR TEST CtRCUIT SEE FIGURE 18 9 10 20 30 0 50 0 28 56 84 112 140 Vos. ORAIN-TO-SQURCE VOLTAGE (VOLTS) Qy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 8-60Rugged Power MOSFETs 08 a 07 Vgs = 10V 2 = s 6 06 Vgs* 20V J = 2 a w 05 z 3 0.4 > 7 So a ez z 03 = 2 = 02 2 Rosion) MEASURED WITH CURRENT PULSE OF 3 2.0 us DURATION. INITIAL Ty = 25C. (HEATING = EFFECT OF 2.0 ys PULSE IS MINIMAL) 0 10 20 30 40 $0 60 Ip. ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 70 N 440 N \ 120 AN 100 80 N 60 Pp, POWER DISSIPATION (WATTS) 40 . \ 0 20 40 60 80 100 Te, CASE TEMPERATURE (OC) 120 140 Fi g. 14 Power Vs. Temperature Derating Curve ADJUST R, TO OBTAIN SPECIFIED Ip Vos Vos [, oT OUT PULSE GENERATOR 109 sovace | | IMPEDANCE Fig. 17 -- Switching Time Test Circuit IRF350R, IRF351R , IRF352R, IRF353R 20 12 (RF3SOR, 351A IRF352R, 353A 1p, ORAIN CURRENT {AMPERES} 0 28 $0 15 100 Tc, CASE TEMPERATURE (C) 125 150 Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK I, 9205-42659 Fig. 15 Unclamped Energy Test Circult 9208-42660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT ISOLATED REGULATOR SUPPLY) SAME TYPE Iv > AS DUT Baltery } Vos CURRENT = CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 Gate Charge Test Circuit 6-61