1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
[1] It is not possible to connect to pin 2 of the SOT428 package.
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007 Product data sheet
nFast switching nLow thermal resistance
nSoft recovery characteristic nLow forward voltage drop
nReverse surge capability nHigh thermal cycling performance
nOutput rectifiers in high-frequency switched-mode power supplies
nVRRM ≤200 V nIO(AV) ≤10 A
nVF≤0.895 V ntrr = 10 ns (typ)
Table 1. Pinning
Pin Description Simplified outline Symbol
1 anode 1
SOT78 (3-lead TO-220AB)
SOT428 (DPAK)
2 cathode [1]
3 anode 2
mb mounting base; cathode
12
mb
3
3
2
mb
1
sym084
31
2
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 2 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
BYQ28E-200 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB SOT78
BYQ28ED-200 DPAK plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped) SOT428
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 200 V
VRWM crest working reverse voltage - 200 V
VRreverse voltage square waveform; δ= 1.0 - 200 V
IO(AV) average output current square waveform; δ= 0.5;
Tmb ≤119 °C; both diodes conducting -10A
IFRM repetitive peak forward current tp=25µs; square waveform; δ= 0.5;
Tmb ≤119 °C; per diode -10A
IFSM non-repetitive peak forward
current t = 10 ms; sinusoidal waveform; per
diode -50A
t = 8.3 ms; sinusoidal waveform; per
diode -55A
IRM peak reverse recovery current tp=2µs; δ= 0.001 - 0.2 A
IRSM non-repetitive peak reverse
current tp= 100 µs - 0.2 A
Tstg storage temperature −40 +150 °C
Tjjunction temperature - 150 °C
Electrostatic discharge
VESD electrostatic discharge voltage all pins; human body model;
C = 250 pF; R = 1.5 kΩ-8kV
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 3 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
5. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to
mounting base with heatsink compound;
per diode; see Figure 1 - - 4.5 K/W
with heatsink compound;
both diodes conducting --3K/W
Rth(j-a) thermal resistance from junction to ambient in free air; SOT78 - 60 - K/W
SOT428 [1] - 50 - K/W
Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width
001aag979
10−1
10−2
1
10
Zth(j-mb)
(K/W)
10−3
tp (s)
10−61 1010−1
10−2
10−510−3
10−4
tp
tp
T
P
t
T
δ =
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 4 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
6. Characteristics
Table 5. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VFforward voltage IF= 5 A; Tj= 150 °C; see Figure 2 - 0.8 0.895 V
IF= 5 A; see Figure 2 - 0.95 1.1 V
IF= 10 A; see Figure 2 - 1.1 1.25 V
IRreverse current VR= 200 V - 2 10 µA
VR= 200 V; Tj= 100 °C - 0.1 0.2 mA
Dynamic characteristics
Qrrecovered charge IF=2AtoV
R≥30 V; dIF/dt=20A/µs;
see Figure 3 - 49nC
trr reverse recovery time ramp recovery; IF= 1 A to VR≥30 V;
dIF/dt = 100 A/µs; see Figure 3 - 1525ns
step recovery; when switched from
IF= 0.5 A to IR= 1 A; measured at
IR= 0.25 A
- 1020ns
IRM peak reverse recovery
current IF=5AtoV
R≥30 V; dIF/dt=50A/µs;
see Figure 3 - 0.5 0.7 A
VFR forward recovery
voltage IF= 1 A; dIF/dt = 10 A/µs; see Figure 4 -1-V
(1) Tj= 150 °C; typical values
(2) Tj= 150 °C; maximum values
(3) Tj=25°C; maximum values
Fig 2. Forward current as a function of forward voltage
001aag978
VF (V)
0 1.51.00.5
5
10
15
IF
(A)
0
(3)(2)(1)
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 5 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Fig 3. Reverse recovery definitions Fig 4. Forward recovery definitions
001aab911
trr
time
100 %
10 %
IFdlF
dt
IRIRM
Qr
001aab912
time
time
VFR
VF
IF
VF
IF(AV) =I
F(RMS) ×√δ a = form factor = IF(RMS) /I
F(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
IF(AV) (A)
08624
001aag976
4
2
6
8
Ptot
(W)
0
δ = 1
0.2
0.1
0.5
001aag977
IF(AV) (A)
0642
2
4
6
Ptot
(W)
0
a = 1.57
2.2
2.8
4.0
1.9
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 6 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
7. Package outline
Fig 7. Package outline SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78 SC-463-lead TO-220AB
D
D1
q
p
L
123
L1
b1
ee
b
0 5 10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
DIMENSIONS (mm are the original dimensions)
AE
A1
c
Q
L2
UNIT A1b1D1ep
mm 2.54
qQ
AbD
cL2
max.
3.0 3.8
3.5
15.0
12.8 3.30
2.79 3.0
2.7 2.6
2.2
0.7
0.4 16.0
15.2
0.9
0.6 1.45
1.00
4.7
4.1 1.40
1.25 6.6
5.9 10.3
9.7
L1
EL
05-03-22
05-10-25
mounting
base
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 7 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Fig 8. Package outline SOT428 (TO-252)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT428 SC-63
TO-252
SOT428
06-02-14
06-03-16
DIMENSIONS (mm are the original dimensions)
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
13
E1
D2
D1HD
LL1
L2
e1
e
mounting
base
wA
M
b
E
b2
b1c
A1
y
0 5 10 mm
scale
UNIT
mm 0.93
0.46 5.46
5.00 0.56
0.20 6.22
5.98 6.73
6.47 10.4
9.6 2.95
2.55
A1
2.38
2.22
Ab
2
1.1
0.9
b1e1
0.89
0.71
bcD
1
0.9
0.5
L2
Ee
2.285 4.57
4.0
D2
min
4.45
E1
min
0.5
L1
min
HDLw
0.2
y
max
0.2
A
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 8 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
8. Revision history
Table 6. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BYQ28_SER_E_ED_4 20071205 Product data sheet - BYQ28E_SERIES_3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Limiting values table: some parameter descriptions amended to conform to latest
standards; IFRM conditions amended; VESD row added.
•Characteristics: Qrr changed to Qr ‘recovered charge’; trr1 and trr2 changed to trr with
‘ramp recovery’ and ‘step recovery’ added to conditions.
BYQ28E_SERIES_3 19981001 Product specification - BYQ28E_SERIES_2
BYQ28E_SERIES_2 19980701 Product specification - BYQ28E_SERIES_1;
BYQ28EB_SERIES_1
BYQ28E_SERIES_1;
BYQ28EB_SERIES_1 19960801 Product specification - -
BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 9 of 10
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 December 2007
Document identifier: BYQ28_SER_E_ED_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
