1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 12 August 2011 Product data sheet
SOT323
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj=25°C - - 60 V
VGS gate-source voltage -20 - 20 V
IDdrain current VGS =10V; T
amb =25°C [1] --320mA
Static characteristics
RDSon drain-source on-state
resistance VGS =10V; I
D= 320 mA;
Tj=25°C -11.6Ω
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 2 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphi c symbol
1 G gate
SOT323 (SC-70)
2Ssource
3 D drain
12
3
017aaa255
G
D
S
Table 3. Ordering information
Type number Package
Name Description Version
BSS138BKW SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code[1]
BSS138BKW AD%
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 3 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj=25°C - 60 V
VGS gate-source voltage -20 20 V
IDdrain current VGS =10V; T
amb =25°C [1] - 320 mA
VGS =10V; T
amb = 100 °C [1] - 210 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 1.2 A
Ptot total power dissipation Tamb =25°C [2] - 260 mW
[1] - 310 mW
Tsp = 25 °C - 830 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb =25°C [1] - 320 mA
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 1500 V
Fig 1. Normalized total power dissipation as a
function of junction temp era tu re Fig 2. Normalized continuous drain current as a
function of junction temp erat ure
Tj (°C)
-75 17512525 75-25
001aao121
40
80
120
Pder
(%)
0
Tj (°C)
-75 17512525 75-25
001aao122
40
80
120
Ider
(%)
0
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 4 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) tp = 100 ms
(4) DC; Tsp = 25 °C
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
aaa-000173
10-1
10-2
1
10
ID
(A)
10-3
VDS (V)
10-1 102
101
(1)
(2)
(3)
(4)
(5)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient in free air [1] -415480K/W
[2] -350400K/W
Rth(j-sp) thermal resistance from junction to solder
point --150K/W
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 5 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa028
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
017aaa029
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 6 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=250µA; V
GS =0V; T
j=25°C 60--V
VGSth gate-source threshold
voltage ID=250µA; V
DS =V
GS; Tj= 25 °C 0.48 1.1 1.6 V
IDSS drain leakage current VDS =60V; V
GS =0V; T
j=25°C --1µA
VDS =60V; V
GS =0V; T
j=150°C --10µA
IGSS gate leakage current VGS =20V; V
DS =0V; T
j=25°C --10µA
VGS =-20V; V
DS =0V; T
j=25°C --10µA
VGS =10V; V
DS =0V; T
j=25°C --1µA
VGS =-10V; V
DS =0V; T
j=25°C --1µA
RDSon drain-source on-state
resistance VGS =10V; I
D=320mA; T
j=25°C - 1 1.6 Ω
VGS =10V; I
D=320mA; T
j= 150 °C - 2 3.2 Ω
VGS =4.5V; I
D= 200 mA; Tj=25°C - 1.1 2.2 Ω
VGS =2.5V; I
D=10mA; T
j=25°C - 1.4 6.5 Ω
gfs forward
transconductance VDS =10V; I
D= 200 mA; Tj= 25 °C - 700 - mS
Dynamic characteristics
QG(tot) total gate charge VDS =30V; I
D= 300 mA; VGS =4.5V;
Tj=25°C -0.60.7nC
QGS gate-source charge - 0.1 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VDS =10V; f=1MHz; V
GS =0V;
Tj=25°C - 4256pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -4-pF
td(on) turn-on delay time VDS =40V; R
L= 250 Ω; VGS =10V;
RG(ext) =6Ω; Tj=25°C - 5 10 ns
trrise time - 5 - ns
td(off) turn-off delay time - 38 76 ns
tffall time - 20 - ns
Source-drain diode
VSD source-drain voltage IS=300mA; V
GS =0V; T
j= 25 °C 0.47 0.8 1.2 V
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 7 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
Tj = 25 °C Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Outp ut characteristics: drain current as a
function of drain-source voltage; typical values Fig 7. Su b-threshold drain current as a function of
gate-source voltage
Tj = 25 °C
(1) VGS = 1.5 V
(2) VGS = 1.75 V
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 4.5 V
(6) VGS = 10 V
ID = 300 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
VDS (V)
04312
aaa-000158
0.2
0.1
0.3
0.4
ID
(A)
0
VGS = 1.25 V
1.75 V
1.5 V
2 V
2.5 V
10 V
aaa-000159
10-4
10-5
10-3
ID
(A)
10-6
VGS (V)
0 2.01.50.5 1.0
(2)
(1) (3)
ID (A)
0 0.40.30.1 0.2
aaa-000160
2
4
6
RDS(on)
(Ω)
0
(1)
(2)
(3)
(4)
(5)
(6)
VGS (V)
0108462
aaa-000161
2
4
6
RDS(on)
(Ω)
0
(1)
(2)
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 8 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as
a function of junctio n temperature; typical
values
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
VGS (V)
0 3.02.01.0
aaa-000162
0.2
0.4
0.6
ID
(A)
0
(1)
(1)(2)
(2)
Tj = (°C)
-60 180120060
aaa-000163
1
0.5
1.5
2
a
0
Tj (°C)
-60 180120060
aaa-000164
1
0.5
1.5
2
VGS(th)
(V)
0
(2)
(3)
(1)
aaa-000165
VDS (V)
10-1 102
101
10
102
C
(pF)
1
(1)
(2)
(3)
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 9 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
ID = 0.3 A; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values Fig 15. Gate charge waveform definitions
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
aaa-000166
4
6
2
8
10
VGS
(V)
0
QG (nC)
0 0.4 0.8 1.2 1.41.00.60.2
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
aaa-000167
VSD (V)
0 1.20.80.4
0.2
0.1
0.3
0.4
IS
(A)
0
(1) (2)
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 10 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 11 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT323 (SC-70)
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 12 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprint for SOT323 (SC-70)
Fig 20. Wave soldering footprint for SOT323 (SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 13 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BSS138BKW v.1 20110812 Product data sheet - -
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 14 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) descr ibed in this document may have c hanged since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modificati ons or additions.
NXP Semiconductors does not give any representat ions or warranties as to
the accuracy or completeness of informati on included herein and shall have
no liability for the consequences of use of such info rmation.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or comple teness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsisten cy or conf lict with the short dat a sheet, the
full data sheet shall pre vail.
Product specifica t io n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this d ocument is be lieved to
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersed es an d r eplaces all inf ormation supplied pri or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
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applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessa ry
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BSS138BKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 12 August 2011 15 of 16
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
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12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 August 2011
Document identifier: BSS138BKW
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . .10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
13 Contact information. . . . . . . . . . . . . . . . . . . . . .15