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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4208, REV. A
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-3P PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
• SCREENED VERSIONS ARE AVAI LABLE
MAXIMUM RATINGS ALL RATING S ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE PIV 1200 Volts
MAXIMUM DC OUTPU T CURR ENT (With Cathode Main tained @ TC = 65 OC, for
Dual Package) IO 20
Amps
MAXIMUM DC OUTPU T CURR ENT (With Cathode Main tained @ TC = 65 OC, for
Single Package) IO 10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, TC = 25 OC IFRM 50 Amps
MAXIMUM NON-REPETITIVE FORWARD SURG E CURRENT PER LEG
(t = 10μs, pulse) p er leg, TC = 25 OC IFSM 250 Amps
MAXIMUM POWER DISSIPATION, TC = 25 OC Pd 40 W
MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE) RθJC 0.9 °C/W
MAXIMUM OPERATING and STORAGE TEMPERATURE RANGE* Top, Tstg -55 to +200 °C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be
performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC TYP MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP (If = 10A PER LEG) Vf TJ = 25 °C
TJ = 175 °C
1.6
2.5 1.8
3.0
Volts
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir TJ = 25 °C
TJ=175 °C
0.01
0.02 0.20
1.00
mA
JUNCTION CAPACITANCE (Vr =400V) per leg 70 PF
TOTAL C APACI TIV E CH AR GE (V R=1200V IF=10 A di /dt=500 A/μs TJ=25°C) QC
per leg 60 N/A nC
SHD619112
SHD619112P