DSEI2x101-12A FRED VRRM = 1200 V I FAV = 2x 91 A t rr = 40 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C IR reverse current, drain current VF forward voltage drop min. typ. TVJ = 25C 3 mA TVJ = 125C 15 mA I F = 100 A TVJ = 25C 1.87 V 2.13 V 1.61 V TVJ = 150 C I F = 200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1200 V I F = 100 A average forward current 1200 VR = 960 V I F = 200 A I FAV max. Unit 1200 V TC = 50 C rectangular 1.92 V T VJ = 150 C 91 A TVJ = 150 C 1.01 V 6.1 m d = 0.5 for power loss calculation only 0.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C VR = 400 V f = 1 MHz TVJ = 25C 107 pF TVJ = 25 C 38 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 0.10 TC = 25C 250 900 W A I F = 100 A; VR = 600 V TVJ = 100 C 52 A -di F /dt = 600 A/s TVJ = 25 C 150 ns TVJ = 100 C 255 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Part No. Logo XXXXX (R) Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Ordering Number DSEI2x101-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI2x101-12A * on die level Delivery Mode Tube Code No. 468002 T VJ = 150 C Fast Diode V 0 max threshold voltage 1.01 V R0 max slope resistance * 4.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Fast Diode 150 16 140 TVJ = 100C VR = 600 V 14 125 120 12 100 IF [A] IF = 200 A 100 A 50 A 10 Qr 75 TVJ = 150C 8 IRM 80 [A] 60 [C] 6 50 40 4 100C 25 IF = 200 A 100 A 50 A 100 TVJ = 100C VR = 600 V 20 2 25C 0 0.0 0.5 1.0 1.5 0 100 2.0 0 1000 VF [V] Fig. 1 Forward current IF versus VF 1.4 trr 0.8 [ns] IRM 0.6 Qrr 600 800 60 TVJ = 100C VR = 600 V 1.5 TVJ = 100C VR = 600 V 50 40 IF = 200 A 100 A 50 A 350 1.0 VFR tfr 30 [s] [V] 300 20 250 10 200 0 0.5 VFR 0.4 0 40 80 120 160 0 TVJ [C] 200 400 600 800 1000 0 tfr 200 -diF /dt [A/s] 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dyn. parameters Qr, IRM versus TVJ 1000 Fig. 3 Typ. peak reverse current Irr versus -diF /dt 400 Kf 400 Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 450 1.0 200 -diF /dt [A/s] 500 1.2 0 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 D=0.7 ZthJC Constants for ZthJC calculation: 0.5 i 0.3 [K/W] 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 0.01 0.1 1 10 1 2 3 4 5 Rthi ti [K/W] [s] 0.020 0.050 0.076 0.240 0.114 0.00002 0.00081 0.01000 0.09400 0.45000 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a