T4-LDS-0220-1, Rev. 1 (111514) ©2011 Microsemi Corporation Page 1 of 6
1N821UR-1 thru 1N829AUR-1
Available on
commercial
versions
6.2 & 6.55 Volt ZENER REFERENCE DIODES
Qualified per MIL-PRF-19500/159
*Qualified Levels:
JAN, JANTX,
JANTXV and JANS
(available on some part
numbers)
DESCRIPTION
The 1N821UR-1 thru 1N829AUR-1 series of surface mount Zero-T C Refe rence Diod es
provides a select ion of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to
as low as 0.0005 %/oC for m i ni m al voltage chang e with temperatu re when operated at 7.5 mA.
These glass surface mount DO-213AA (MELF) reference diodes are optionally available with
an internal-metallurgical-bond a s well as RoHS compl iant option for com m ercial applications.
This type of bonded Zener package construction is al so available in JAN, JANTX, and
JANTXV milit ary qual i fications (RoHS compliant opti on not applicable). M i crosemi also offers
numerous other Zener Reference Diode products fo r a variety of other vol tages up to 200 V.
DO-213AA
Package
Also available in :
DO-35 (DO-204AH)
(axial-leaded)
1N821 – 1N829
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of J E D E C r egistered 1N821 thru 1N829.
• Lowered Zener impedance option available.
• Reference voltage selection of 6.2 V & 6. 55 V +/-5% with further ti ght tolerance options on
commercial at lower voltage. (Excludes 1N826 and 1N828.)
• Temperature c ompensated.
• Internal meta l lurgical bond.
• Double plug construction.
• *JAN, JANTX, JANTXV and JANS qualif ication per MIL-PRF-19500/159 available on 1N821, 823,
825, 827 and 829.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Provides minimal voltage changes over a broad temperatur e r ange.
• For instrumentation and oth er circuit designs requiring a stable volt age reference.
• Maximum tem per ature coefficient select i ons available from 0.01 %/ºC to 0. 0005 %/ºC.
• Tight refer ence voltage tol er ances availa ble on commercial with center nominal value of 6.2 V by
adding designated tolerance such as 1%, 2%, 3%, etc. after the part num ber for identification.
(Excludes 1N826 and 1N828.)
• Small surface-mount footprint.
• Nonsensitive to ESD per MIL-STD-750 Method 1020.
• Typical low capacitance of 100 pF or less.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689 -0803
MSC – Ireland
Gort Road Busi nes s Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/ Test Conditions
Symbol
Value
Unit
Junction and S torage tempera ture
TJ and TSTG
-55 to +175
oC
Power Dissipation (Note 1)
PD
500
mW
Maximum Zener Current
IZM
70
mA
Solder Pad Temperatures at 10 s
TSP
260
oC
Notes: 1. @ TL = 25 oC and maximum current IZM of 70 mA. For optimum voltage-temperature stability, IZ = 7.5 mA
(less than 50 mW in dissipated power). Derate at 3.33 mW/oC above TA = +25 oC.
T4-LDS-0220-1, Rev. 1 (111514) ©2011 Microsemi Corporation Page 2 of 6
1N821UR-1 thru 1N829AUR-1
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass case. DO-213AA package.
• TERMINALS: Leads, Tin-Lead (mil itary) or RoHS c ompliant annealed matte Tin plating (commercial grade only) solder able per
MIL-STD-750, Method 2026.
• MARKING: Cathode band (except double an ode 1N822 and 1N824) .
• POLARIT Y: Reference diode t o be operated with the banded end positive with respect to the opposi te end.
• MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PP M/°C. The
COE of the mounting surface system should be selected to provide a suitable match with this device.
• TAPE & REEL opt i on: Standard per E IA-481-B with 12 mm tape (add “T R ” suf fix to part number). Consult factory for quanti ties.
• WEIGHT: 0. 04 gr ams.
• See Package Dimensions on l as t page.
PART NOMENCL AT URE
Applicable to: JAN, JA NTX, JANTXV and JA NS 1N821, 1N823, 1N825, 1N827, and 1N829 only:
JAN 1N821 UR -1
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
Metallurgical Bond
Surface Mount Package
JEDEC type n umber
(see Electrical Characteristics
table)
Applicable to: commercial 1N821, 1N 823, 1N825, 1N827, and 1N829 only:
1N821 A UR -1 -1% (e3)
JEDEC type n umber
(see Electrical Characteristics
table)
Zener Impedance
A = 10 ohms
Blank = 15 ohms
Surface Mount Package
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Continued on next page.
T4-LDS-0220-1, Rev. 1 (111514) ©2011 Microsemi Corporation Page 3 of 6
1N821UR-1 thru 1N829AUR-1
Applicable to: 1N82 2 and 1N824 only:
1N822 UR -1 -1% (e3)
JEDEC type n umber
(see Electrical Characteristics
table)
Surface Mount Package
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Applicable to: 1N82 6 and 1N828 only:
1N826 UR -1 (e3)
JEDEC type n umber
(see Electrical Characteristics
table)
Surface Mount Package
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum r everse (leakage) current that will flow at the specified voltage and t em perature.
IZ, IZT, IZK
Regulator Cur rent: The dc r egulator current (IZ), at a specified test point (IZT), near br eakdown knee ( IZK).
VZ
Zener Voltage: The zener voltage the device will exhibit at a specified curr ent (IZ) in i ts breakdown reg ion.
ZZT or ZZK
Dynamic Impedance: The sm all s i gnal impedance of the dio de when biased to operate in its br eakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively.
T4-LDS-0220-1, Rev. 1 (111514) ©2011 Microsemi Corporation Page 4 of 6
1N821UR-1 thru 1N829AUR-1
ELECTRICAL CHARACT ERISTICS @ 25oC (unless otherwise specified)
JEDEC
TYPE
NUMBER
(Notes
1 & 5)
ZENER
VOLTAGE
VZ @ IZT
(Note 1 and 4)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
(Note 2)
MAXIMUM
REVERSE
CURRENT
IR @ 3 V
VOLTAGE
TEMPERATURE
STABILITY
(
∆
VZT MAX)
-55oC to +100oC
(Note 3 and 4)
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
Volts
mA
Ohms
µA
mV
% / oC
1N821UR
1N821AUR
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
96
96
0.01
0.01
1N822UR†
5.9-6.5
7.5
15
2
96
0.01
1N823UR
1N823AUR
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
48
48
0.005
0.005
1N824UR†
5.9-6.5
7.5
15
2
48
0.005
1N825UR
1N825AUR
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
19
19
0.002
0.002
1N826UR
6.2-6.9
7.5
15
2
20
0.002
1N827UR
1N827AUR
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
9
9
0.001
0.001
1N828UR
6.2-6.9
7.5
15
2
10
0.001
1N829UR
1N829AUR
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
5
5
0.0005
0.0005
† Double Anod e: Electrical specifications apply under both bias polarities.
NOTES: 1. Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the VZ
voltage nominal of 6.2 V, add a further hyphened suffix number % to the part number for desired tolerance, e.g. 1N827UR-1-
2%, 1N829UR-1-1%, 1N829AUR-1-1%, etc.
2. Zener impedance is measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
4. Voltage measurements to be performed 15 seconds after application of dc current.
5. 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, and 1N829UR-1 also have qualification to MIL-PRF-19500/159 by adding
the JAN, JANTX, or JANTXV prefix to part numbers as well as the “-1” suffix.
T4-LDS-0220-1, Rev. 1 (111514) ©2011 Microsemi Corporation Page 5 of 6
1N821UR-1 thru 1N829AUR-1
GRAPHS
600
500
400
300
200
100
0
25 50 100 150 175
TEC, End Cap temperat ur e (oC)
FIGURE 1
POWER DERAT ING CURV E
IZ – Operating Current (mA)
FIGURE 3
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT
The curve shown in Figure 3 is typical of the diode series and greatly simplifies the
estimation of the Temperature Coefficient (TC) when the diode is operated at currents
other than 7.5 mA.
EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has specif ied
Temperature Coe ff ic i e nt ( TC) li mi ts of +/-0.005 %/oC. To obtain the typical Temperature
Coefficient limits for this same diode operated at a current of 6.0 mA, the new TC limits
(%/oC) can be estimated using the graph in FIGURE 3. At a test current of 6.0 mA the
change in Temperature Coefficient (TC) is approximately –0.0006 %/oC. The algebraic
sum of +/-0.005 %oC and –0.0006 %/oC gives the new estimated limits of +0.0044 %/oC
and -0.0056 %/oC.
Operating Current I
ZT
(mA)
FIGURE 2
TYPICAL ZENER IMPEDANCE
VS.
OPERATING CURRENT
Zener Impedance I
ZT
(Ohms)
Change in temperature coefficient (%/oC)
Change in temperature coefficient (mV/oC)
This curve in Figure 4 illustrates the change of diode voltage arising from the effect of impedance.
It is in effect an exploded view of the zener operating region of the I-V characteristic.
In conjunction with Figure 3, this curve can be used to estimate total voltage regulation under
conditions of both varying temperature and current.
I
Z
– Operating Current ( mA)
FIGURE 4
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT
∆V
Z
– Change in Zener Volt age (mV)
P
D
, Rated Power
Dissipation (mW)
T4-LDS-0220-1, Rev. 1 (111514) ©2011 Microsemi Corporation Page 6 of 6
1N821UR-1 thru 1N829AUR-1
PACKAGE DIMENSIONS
Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
BD
.063
.067
1.60
1.70
BL
.130
.146
3.30
3.71
ECT
.016
.022
0.41
0.56
S
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordan c e with ASME Y14.5M, diameters are equival ent to Φx symbology.
PAD LAYOUT
INCHES
mm
A
.200
5.08
B
.055
1.40
C
.080
2.03
