© Semiconductor Components Industries, LLC, 2016
September, 2018 − Rev. 8
1Publication Order Number:
NCV8460/D
NCV8460A
Self Protected High Side
Driver with Temperature
Shutdown and Current Limit
The NCV8460A is a fully protected High−Side driver that can be
used to switch a wide variety of loads, such as bulbs, solenoids and
other acuators. The device is internally protected from an overload
condition by an active current limit and thermal shutdown.
A diagnostic output reports ON and OFF state open load conditions
as well as thermal shutdown.
Features
•Short Circuit Protection
•Thermal Shutdown with Automatic Restart
•CMOS (3.3 V / 5 V) compatible control input
•Open Load Detection in On and Off State
•Diagnostic Output
•Undervoltage and Overvoltage Shutdown
•Loss of Ground Protection
•ESD protection
•Slew Rate Control for Low EMI Switching
•Very Low Standby Current
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC Qualified and
PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Typical Applications
•Switch a Variety of Resistive, Inductive and Capacitive Loads
•Can Replace Electromechanical Relays and Discrete Circuits
•Automotive / Industrial
SO−8
D SUFFIX
CASE 751
PIN CONNECTIONS
Device Package Shipping†
ORDERING INFORMATION
MARKING
DIAGRAM
18
5
3
4
(Top View)
GND
STAT
VD
7
6
2OUT
IN
NC VD
OUT
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
NCV8460ADR2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
V8460A = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G= Pb−Free Package
1
8V8460A
ALYW
G
1
8
Parameter Symbol Units
Operating Voltage Range VSV
RON
PRODUCT SUMMARY
Value
6 to 36
60RDSon(max) TJ = 25°CmW
Ilim 6Output Current Limit (min) A
NCV8460A
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2
Control
Logic
Undervoltage
Detection
Overvoltage
Detection
Regulated
Chargepump
Current
Limitation
Overtemperature
Detection
í
GND
STAT
IN
OUT
VD
Input
Buffer
Pre
Driver
Output
Clamping
Off−State
Open Load Detection
On−State
Open Load Detection
Figure 1. Block Diagram
PIN DESCRIPTION
Pin # Symbol Description
1 GND Ground
2 IN Logic Level Input
3 STAT Status Output
4 N/C No Connection
5 VDSupply Voltage
6 OUT Output
7 OUT Output
8 VDSupply Voltage
NCV8460A
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3
MAXIMUM RATINGS
Rating Symbol
Value
Unit
Min Max
DC Supply Voltage VD−0.3 41 V
Peak Transient Input Voltage
(Load Dump 42.5 V, VD = 13.5 V, RLOAD = 6.5 W, ISO7637−2 pulse 5)
Vpeak 56 V
Input Voltage Vin −8 8 V
Input Current Iin −5 5 mA
Output Current (Note 1) Iout −6 Internally
Limited
A
Negative Ground Current −Ignd −200 −mA
Status Current Istatus −5 5 mA
Power Dissipation, TA = 25°C Ptot 1.183 W
Electrostatic Discharge
(HBM Model 100 pF / 1500 W)
Input
Status
Output
VD
4
3.5
5
5
DC
kV
kV
kV
kV
Single Pulse Inductive Load Switching Energy (Note 2)
(L = 1.8 mH, Vbat = 13.5 V; IL = 9 A, TJstart = 150°C)
EAS 100 mJ
Operating Junction Temperature TJ−40 +150 °C
Storage Temperature Tstorage −55 +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Value Unit
Thermal Resistance
Junction−to−Lead
Junction−to−Ambient (min. Pad)
Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)
RqJL
RqJA
RqJA
30
110.8
105.6
°C/W
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (8 ≤ VD ≤ 36 V; −40°C < TJ < 150°C unless otherwise specified)
Rating Symbol Conditions
Value
Unit
Min Typ Max
Operating Supply Voltage VD6−36 V
Undervoltage Shutdown VUV 3 5 6 V
Undervoltage VUV_Rst 6.5 V
Overvoltage Shutdown VOV 36 V
On Resistance RON Iout = 2 A; TJ = 25°C, VD > 8 V
Iout = 2 A, VD > 8 V
60
120
mW
Standby Current IDOff State, Vin = Vout = 0 V, VD = 13.5 V
On State; Vin = 5 V, VD = 13.5 V, Iout = 0 A
10
1.5
20
3.5
mA
mA
Output Leakage Current ILVin = Vout = 0 V
Vin = 0 V, Vout = 3.5 V
Vin = Vout = 0 V, VD = 13.5 V
−20
50
10
3
mA
INPUT CHARACTERISTICS
Input Voltage − Low Vin_low 1.25 V
Input Current − Low Iin_low Vin = 1.25 V 1mA
Input Voltage − High Vin_high 3.25 V
Input Current − High Iin_high Vin = 3.25 V 10 mA
Input Hysteresis Voltage Vhyst 0.25 V
Input Clamp Voltage Vin_cl Iin = 1 mA
Iin = −1 mA
11
−13
12
−12
13
−11
V
SWITCHING CHARACTERISTICS
Turn−On Delay Time td_on to 10% Vout, VD = 13.5 V, RL = 6.5 W40 ms
Turn−Off Delay Time td_off to 90% Vout, VD = 13.5 V, RL = 6.5 W30 ms
Slew Rate On dVout / dton 10% to 80% Vout, VD = 13.5 V, RL = 6.5 W0.9 V / ms
Slew Rate Off dVout / dtoff 90% to 10% Vout, VD = 13.5 V, RL = 6.5 W0.7 V / ms
OUTPUT DIODE CHARACTERISTICS (Note 3)
Forward Voltage VFIout = −1.3 A, TJ = 150°C 0.6 V
STATUS PIN CHARACTERISTICS
Status Output Voltage Low Vstat_low Istat = 1.6 mA 0.2 0.5 V
Status Leakage Current Istat_leakage Vstat = 5 V 1 10 mA
Status Pin Input Capacitance Cstat Vstat = 5 V (Note 3) 100 pF
Status Clamp Voltage Vstat_cl Istat =1 mA
Istat = −1 mA
10
−2.2
11
−1.2
12
−0.6
V
PROTECTION FUNCTIONS (Note 4)
Temperature Shutdown
(Note 3)
TSD 150 175 200 °C
Temperature Shutdown
Hysteresis (Note 3)
TSD_hyst 7 15 °C
Output Current Limit Ilim 8 V < VD < 36 V 6 9 15 A
6 V < VD < 36 V 15 A
Status Delay in Overload td_stat 20 ms
Switch Off Output Clamp
Voltage
Vclamp Iout = 2 A, Vin = 0 V, L = 6 mH VD −
41
VD −
45
VD −
55
V
3. Not subjected to production testing
4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions
must limit the duration and number of activation cycles.
NCV8460A
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ELECTRICAL CHARACTERISTICS (8 ≤ VD ≤ 36 V; −40°C < TJ < 150°C unless otherwise specified)
Rating Unit
Value
ConditionsSymbol
Rating Unit
MaxTypMin
ConditionsSymbol
DIAGNOSTICS CHARACTERISTICS
Openload On State Detection
Threshold
IOL Vin = 5 V 30 500 mA
Openload On State Detection
Delay
td_OL_on Iout = 0 A 220 ms
Openload Off State Detection
Threshold
VOL Vin = 0 V 1.5 −3.5 V
Openload Detection Delay at
Turn Off
td_OL_off 1000 ms
3. Not subjected to production testing
4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions
must limit the duration and number of activation cycles.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 2. Open Load Status Timing
(with external pull−up)
Figure 3. Overtemperature Status Timing
VIN
VSTAT
Td_OL_on
Vout > VOL
Td_OL_off
Iout < IOL
TJ > TJ_TSD
Td_STAT
Td_STAT
VSTAT
VIN
80% 90%
10%
t
t
Figure 4. Switching Timing Diagram
dVout / dt(on)
td(on) td(off)
Vout
dVout / dt(off)
Vin
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TYPICAL CHARACTERISTICS CURVES
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
−50 0 50 100 150
VUV (V)
TEMPERATURE (°C)
Figure 5. Undervoltage Shutdown vs.
Temperature
37
38
39
40
41
42
43
44
45
TEMPERATURE (°C)
Figure 6. Overvoltage Shutdown vs.
Temperature
VOV (V)
−50 0 50 100 150
28
48
68
88
108
128
148
0 5 10 15 20 25 30 35 40
RDS(on) (mW)
VD (V)
Figure 7. RDS(on) vs. VD
25°C
−40°C
150°C
0
20
40
60
80
100
120
140
0 1020304050
Ioff (mA)
VD (V)
Figure 8. OFF State Standby Current vs. VD
−40°C
25°C
150°C
0
20
40
60
80
100
120
0 10203040
IL (mA)
VD (V)
Figure 9. Output Leakage vs. VD
Vout = 0 V
−40°C
25°C
150°C
TEMPERATURE (°C)
VIN HIGH (V)
−50 0 50 100 150
4
3.5
3
2.5
2
1.5
1
Figure 10. Vin Threshold High vs. Temperature
NCV8460A
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TYPICAL CHARACTERISTICS CURVES
1
1.5
2
2.5
3
3.5
4
TEMPERATURE (°C)
Vin LOW (V)
−50 0 50 100 150
Figure 11. Vin Threshold Low vs. Temperature
1
2
3
4
5
6
7
8
9
10
−50 0 50 100 150
TEMPERATURE (°C)
Figure 12. Input Current vs. Temperature
Iin (mA)
Iin @ 1.25 V
Iin @ 3.25 V
Iin @ 5 V
10
10.5
11
11.5
12
12.5
13
13.5
14
TEMPERATURE (°C)
Vin_cl (pos) (V)
Figure 13. Input Clamp Voltage (Positive) vs.
Temperature
−50 0 50 100 150
−10
−10.5
−11
−11.5
−12
−12.5
−13
−13.5
−14
−50 0 50 100 150
TEMPERATURE (°C)
Figure 14. Input Clamp Voltage (Negative) vs.
Temperature
Vin_cl (neg) (V)
0
10
20
30
40
50
60
70
80
90
0 10203040
Ton (ms)
VD (V)
Figure 15. Turn On Time vs. VD
−40°C
25°C
150°C
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30 35 40
−40°C
25°C
150°C
Toff (ms)
VD (V)
Figure 16. Turn Off Time vs. VD
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TYPICAL CHARACTERISTICS CURVES
0
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0 5 10 15 20 25 30 35 40
−40°C
25°C
150°C
dVout / dt(on) (mS)
VD (V)
Figure 17. Slew Rate ON vs. VD
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20 25 30 35 40
dVout / dt(off) (mS)
VD (V)
Figure 18. Slew Rate OFF vs. VD
−40°C
25°C
150°C
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
TEMPERATURE (°C)
Figure 19. Forward Voltage (@ −1.3 A) vs.
Temperature
VF (V)
−50 0 50 100 150 0
50
100
150
200
250
300
0 10203040
−40°C
25°C
150°C
Vstat_low (mV)
VD (V)
Figure 20. STAT Low Voltage vs. VD
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
TEMPERATURE (°C)
Figure 21. Status Leakage Current vs.
Temperature
Istat_Leakage (mA)
−50 0 50 100 150 10
10.5
11
11.5
12
12.5
13
−50 0 50 100 150
TEMPERATURE (°C)
Figure 22. Status Clamp Voltage (Positive) vs.
Temperature
V(pos) (V)
NCV8460A
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TYPICAL CHARACTERISTICS CURVES
0
−1
−2
−3
−4
−50 0 50 100 150
TEMPERATURE (°C)
Figure 23. Status Clamp Voltage (Negative) vs.
Temperature
STATUS CLAMP (neg) (V)
5
6
7
8
9
10
11
12
13
14
−50 0 50 100 150
TEMPERATURE (°C)
Figure 24. Current Limit vs. Temperature
VD = 13.5 V
Ilim (A)
43
43.5
44
44.5
45
45.5
46
46.5
47
47.5
48
0 1020304050
VD (V)
Figure 25. Turn Off Output Clamp Voltage vs.
VD and Temperature
Vclamp (V)
−40°C
25°C
150°C
0
50
100
150
200
250
300
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 26. ON State Open Load Detection vs.
Temperature VD = 13.5 V
IOL (mA)
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
0 5 10 15 20 25 30 35 40
VD (V)
Figure 27. Off State OL Detection Threshold
vs. VD and Temperature
Vol (V)
−40°C
25°C
150°C
1
10
100
10 10
0
L (mH)
Figure 28. Single−Pulse Maximum Switch−off
Current vs. Load Inductance
ILmax (A)
25°C
150°C
NCV8460A
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TYPICAL CHARACTERISTICS CURVES
10
100
1000
10 100
L (mH)
Figure 29. Single−Pulse Maximum Switch−off
Current vs. Load Inductance
Emax (mJ)
25°C
150°C
ISO 7637−2: 2004(E) PULSE TEST RESULTS
ISO 7637−2:2004(E) Test Levels Delays and
Test Pulse I II III IV Impedance
1−25 V −50 V −75 V −100 V 2 ms, 10 W
2a +25 V +50 V +37 V +50 V 0.05 ms, 10 W
3a −25 V −50 V −112 V −150 V 0.1 ms, 50 W
3b +25 V +50 V +75 V +100 V 0.1 ms, 50 W
4−4 V −5 V −6 V −7 V 5 s, .01 W
5 (Load Dump) +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 W
ISO 7637−2:2004(E) Test Results
Test Pulse I II III IV
1 C C C C
2a C C C C
3a C C C C
3b C C C C
4 C C C C
5 (Load Dump) C E E E
Class Functional Status
AAll functions of a device perform as designed during and after exposure to disturbance.
BAll functions of a device perform as designed during exposure. However,one or more of
them can go beyond specified tolerance. All functions return automatically to within normal
limits after exposure is removed. Memory functions shall remain class A.
COne or more functions of a device do not perform as designed during exposure but return
automatically to normal operation after exposure is removed.
DOne or more functions of a device do not perform as designed during exposure and do not return to normal operation until
exposure is removed and the device is reset by simple
EOne or more functions of a device do not perform as designed during and after exposure and cannot be returned to proper
operation without replacing the device.
NCV8460A
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Status
Input
Load Voltage
Normal Operation
Status
Input
Load Voltage
Undervoltage
Status
Input
Overvoltage
Undefined
Load Voltage
Status
Input
Open Load with External pull−up
Load Voltage
Load Voltage
Status
Input
Open Load without External pull−up
Overtemperature
Load Voltage
Status
Input
Figure 30. Waveforms
VD
VCC
TJ
TR
VOL
TTSD
VD > VOV
VUV_HYS
VD < VOV
VUV
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Reverse Battery
Protection
Load
STAT
GND
5 V
Input Vout
VD
RGND DGND
+−
Figure 31. Application Diagram
Reverse Battery Protection
An external resistor RGND is required to adequately
protect the device from a Reverse Battery event. The resistor
value can be calculated using the following two formulas.
1. RGND ≤ 600 mV / (Id (on) max)
2. RGND ≥ (-VD) / (-Ignd)
Maximum (-Ignd) current, which is the reverse GND pin
current, can be found in the Maximum Ratings section.
Several High Side Devices can share same the reverse
battery protection resistor. Please note that the sum of (Id
(on) max) of all devices should be used to calculate RGND
value. If the microprocessor ground is not common with the
device ground, RGND will produce a voltage offset ((Id (on)
max) x RGND) with respect to the IN and STAT pins.
This offset will be increased when more than one device
shares the resistor.
Power Dissipation during a reverse battery event is equal
to:
PD+ǒ*VDǓ2ńRGND
In the case of high power dissipation due to several
devices sharing RGND, it is recommended to place a diode
DGND in the ground path as an alternate reverse battery
protection method. When driving an inductive load, a 1 kW
resistor should be placed in parallel with the DGND diode.
This method will also produce a voltage offset of ~600 mV
with respect to the IN and STAT pins. This diode can also be
shared amongst several High Side Devices. This voltage
offset will vary if DGND is shared by multiple devices.
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14
VD
VOUT
STAT
GND
Input
Vpull −up
Rpull −up
RL
OL I
Vbat
5V
Figure 32. Open Load Detection In Off State
OFF State Open Load Detection
Off State Open Load Detection requires an external
pull-up resistor (Rpull-up) connected between VOUT pin and
a positive supply voltage (Vpull-up).
The external Rpull-up resistor value should be selected to
ensure that a false OFF State OL condition is not detected
when the load (RL) is connected. A VOUT voltage above the
VOL_min (Openload Off State Detection Threshold)
minimum value with the load (RL) connected needs to be
avoided. The following formula shows this relationship:
VOUT +ǒVpull*upńǒRL)Rpull*upǓǓRLtVOL_min
In addition to ensuring the selected Rpull-up resistor value
does not cause a false OFF State OL detection condition
when the load is connected, the Rpull-up must also not cause
the OFF State OL to miss detecting an OL condition when
the load is disconnected. A VOUT voltage below the
VOL_max (Openload Off State Detection Threshold)
maximum value with the load (RL) disconnected needs to be
avoided. The following formula shows this relationship:
Rpull*up tǒVpull*up *VOL_maxǓńOL1
OL1+ILǒOutput Leakage with VOUT +3.5 VǓ
Because Id (OFF) may significantly increase if VOUT is
pulled high (up to several mA), Rpull-up resistor should be
connected to a supply that is switched OFF when the module
is in standby.
NCV8460A
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15
0.01
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10
0
PULSE TIME (s)
R(t), (°C/W)
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 33. Transient Thermal Impedance
COPPER HEAT SPREADER AREA (mm2)
60
80
100
120
140
160
180
0 200 400 600 800 1000
qJA (°C/W)
1.0 oz
2.0 oz
Figure 34. RqJA vs Copper Area
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16
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
SEATING
PLANE
1
4
58
N
J
X 45 _
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
BS
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0 8 0 8
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
−X−
−Y−
G
M
Y
M
0.25 (0.010)
−Z−
Y
M
0.25 (0.010) ZSXS
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒmm
inchesǓ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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