VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 1Document Number: 94384
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Thyristor High Voltage, Phase Control SCR, 25 A
FEATURES
• Designed and qualified for industrial level
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 pending
• 125 °C max. operating junction temperature
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-25TTS...FP... high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
PRODUCT SUMMARY
Package TO-220AB FP
Diode variation Single SCR
IT(AV) 16 A
VDRM/VRRM 800 V, 1200 V
VTM 1.25 V
IGT 45 mA
TJ- 40 °C to 125 °C
(G) 3
2
(A)
1 (K)
TO-220AB FULL-PAK
123
Available
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W 18 22 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 16 A
IRMS 25
VRRM/VDRM 800/1200 V
ITSM 350 A
VT16 A, TJ = 25 °C 1.25 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-25TTS08FPPbF, VS-25TTS08FP-M3 800 800 10
VS-25TTS12FPPbF, VS-25TTS12FP-M3 1200 1200
VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 2Document Number: 94384
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 51 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current IRMS 25
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 630
Maximum I2t for fusing I2tt = 0.1ms to 10 ms, no voltage reapplied 6300 A2s
Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V
On-state slope resistance rtTJ = 125 °C 12.0 m
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C -150
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
µsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 3Document Number: 94384
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 2.5
°C/W
Maximum thermal resistance,
junction to ambient RthJA 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB FULL-PAK (94/V0) 25TTS08FP
25TTS12FP
0 5 10 15 20
0
20
40
60
80
100
120
140
30°
25TTS.. Series
60° 90°
180°
120°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
0 5 10 15 20 25 30
0
20
40
60
80
100
120
140
30°
25TTS.. Series
60°
180° DC
120°
90°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
0
5
10
15
20
25
048121620
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
25TTS. . Se r i e s
T = 125°C
J
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-sta te Current (A)
2 5 TTS. . Se r i e s
T = 125°C
J
VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 4Document Number: 94384
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf S
ine Wave On-state Current (A)
Initia l T = 125°C
@ 6 0 H z 0 . 00 8 3 s
@ 5 0 H z 0 . 01 0 0 s
J
25TTS. . Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
100
150
200
250
300
350
400
0.01 0.1 1
Pe a k Ha lf S
ine Wave On-state Current (A)
Pul se Tr a in Du ra t i o n ( s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
25TTS.. Se rie s
1
10
100
1000
012345
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Insta nta neo us On-sta te Vo lta g e (V)
T = 1 2 5° C
J
25TTS.. Series
Square Wave Pulse Duration (s)
Thermal Impedance ZthJC (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 26-Jul-13 5Document Number: 94384
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Insta nta ne ous Ga te Current (A)
Insta nt aneo us G a te Volta g e (V)
TJ = 2 5 ° C
T
J = 125 °C
b)Recommended load line for
Frequenc y Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = - 1 0 ° C
25TTS.. Serie s
IGD
VGD
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, t p = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-25TTS08FPPbF 50 1000 Antistatic plastic tubes
VS-25TTS08FP-M3 50 1000 Antistatic plastic tubes
VS-25TTS12FPPbF 50 1000 Antistatic plastic tubes
VS-25TTS12FP-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95072
Part marking information TO-220FP PbF www.vishay.com/doc?95069
TO-220FP -M3 www.vishay.com/doc?95456
2- Current rating (25 = 25 A)
3- Circuit configuration:
4- Package:
5
T = Single thyristor
- Type of silicon:
6- Voltage code x 100 = VRRM
T = TO-220AB
Standard recovery rectifier
7- FULL-PAK
8
08 = 800 V
12 = 1200 V
Device code
62 43 5 7 8
25 T T S 12 FP PbF
1
1- Vishay Semiconductors product
-Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
VS-
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Jul-11 1Document Number: 95072
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DIMENSIONS in millimeters
5° ± 0.5° 5° ± 0.5°
0.9
0.7 1.15
1.05
2.54 TYP.
2.54 TYP.
2.8
2.6
1.4
1.3
TYP.
10°
16.4
15.4
16.0
15.8
13.56
13.05
0.61
0.38
2.85
2.65
3.7
3.2
4.8
4.6
3.3
3.1
7.31
6.91
10.6
10.4
Hole Ø 3.4
3.1
(2 places)
R 0.7
R 0.5 Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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