Characteristics STPS1170
2/8 Do cID027018 Rev1
1 Characteristics
To evaluate the conduction loss es use the following equation:
P = 0.59 x IF(AV) + 0.08 x IF2(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse vol tage 170 V
VRRM Repetitive peak reverse vol tage, Tj = -40 °C 160 V
IF(RMS) Forward rms current 15 A
IF(AV) Average forward current, δ = 0.5, square wave SMAflat, TL = 160 °C 1A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 45 A
PARM(1) Repet it ive peak avalanche power, square wave tp = 1 0 µs , T j = 125 °C 110 W
Tstg Storage temp erat ure range -65 to +175 °C
TjOperat ing junction temper ature(2) -40 to +175 °C
1. For pulse time duration deratings, please refer to Figure 3. Mo re detai ls regarding t he avalanche energy measureme nts
and diode vali dati on in the avalanche are provided in the STMicroelectronics Applicat ion notes AN17 68, “A dmissi ble
avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche
specification”.
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Ther mal parameters
Symbol Parameter Value Unit
Rth(j-l) Junction to lead, SMAflat 20 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test condi ti ons Min. Typ. Max . Unit
IR(1) Reverse leakage current Tj = 25 °C VR = VRRM 1.5 µA
Tj = 125 °C 0.25 1.5 mA
VF(2) Forward vol tag e drop
Tj = 25 °C IF = 1 A 0.82
V
Tj = 125 °C 0.62 0.67
Tj = 25 °C IF = 2 A 0.89
Tj = 125 °C 0.69 0.75
1. Pulse tes t: tp = 5 ms, δ < 2%
2. Pulse tes t: tp = 380 µs, δ < 2%