High Voltage MOSFET
D (TAB)
98809B (01/06)
GDS
© 2006 IXYS All rights reserved
N-Channel, Depletion Mode
VDSS = 1000 V
ID25 = 100 mA
RDS(on) = 110 ΩΩ
ΩΩ
Ω
Features
zNormally ON mode
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zFast switching speed
Applications
zLevel shifting
zTriggers
zSolid state relays
zCurrent regulators
IXTP 01N100D
IXTU 01N100D
IXTY 01N100D
Preliminary Data Sheet
TO-220 (IXTP)
Pins: 1 - Gate 2 - Drain
3 - Source TAB - Drain
TO-251 (IXTU)
D
S
G
D (TAB)
TO-252 (IXTY)
G
S
D (TAB)
Symbol Test Conditions Maximum Ratings
VDSX TJ = 25°C to 150°C 1000 V
VDGX TJ = 25°C to 150°C 1000 V
VGS Continuous ± 20 V
VGSM Transient ± 30 V
IDSS TC = 25°C; TJ = 25°C to 150°C 100 mA
IDM TC = 25°C, pulse width limited by TJ400 mA
PDTC = 25°C 25 W
TA = 25°C 1.1 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
TISOL Plastic case for 10 s (IXTU) 300 °C
MdMounting torque TO-220 1.3 / 10 Nm/lb.
Weight TO-220 4 g
TO-251 0.8 g
TO-252 0.8 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VDSX VGS = -10 V, ID = 25 μA 1000 V
VGS(off) VDS = 25V, ID = 25 μA -2.5 -5 V
IGSS VGS = ± 20 VDC, VDS = 0 ±100 nA
IDSX(off) VDS = VDSX, VGS = -10 V 10 μA
TJ = 125°C 250 μA
RDS(on) VGS = 0 V, ID = 50 mA Note 1 90 110 Ω
ID(on) VGS = 0 V, VDS = 25V Note 1 100 mA
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP 01N100D
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 50 V; ID = 100 mA Note1 100 150 mS
Ciss 120 pF
Coss VGS = -10 V, VDS = 25 V, f = 1 MHz 25 pF
Crss 5pF
td(on) VDS = 100 V V, ID = 50 mA 8 ns
trVGS = 0 V to -10 6 ns
td(off) RG= 30Ω (External) 30 ns
tf51 ns
RthJC 5 K/W
RthCS TO-220 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VSD VGS = -10 V, IF = 100 mA Note1 1.0 1.5 V
trr IF = 0.75 A, -di/dt = 10 A/μs, 1.5 μs
VDS = 25 V, VGS = -10V
Note1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-252 AA Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
Pins: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source TAB - Drain
TO-220 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 BSC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
L3 1.15 1.52 .045 .060
TO-251 AA Outline
Pins: 1 - Gate 2 - Drain
3 - Source TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
