BCX70H E6433 - Infineon Technologies

2007-04-20

1

BCW60, BCX70

12

3

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW61, BCX71 (PNP)

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCW60B

BCW60C

BCW60D

BCW60FF

BCX70G

BCX70H

BCX70J

BCX70K

ABs

ACs

ADs

AFs

AGs

AHs

AJs

AKs

1=B

2=E

3=C

SOT23

1Pb-containing package may be available upon special request

2007-04-20

2

BCW60, BCX70

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BCW60, ...60FF

BCX70

VCEO

32

45

V

Collector-base voltage

BCW60, ...60FF

BCX70

VCBO

32

45

Emitter-base voltage VEBO 6

Collector current IC100 mA

Peak collector current ICM 200

Peak base current IBM 200

Total power dissipation

TS ≤ 71 °C Ptot 330 mW

Junction temperature Tj150 °C

Storage temperature Tstg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 240 K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

2007-04-20

3

BCW60, BCX70

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCW60, ...60FF

IC = 10 mA, IB = 0 , BCX70

V(BR)CEO

32

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BCW60, ...60FF

IC = 10 µA, IE = 0 , BCX70

V(BR)CBO

32

45

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0 V(BR)EBO 6 - -

Collector-base cutoff current

VCB = 32 V, IE = 0 , BCW60, ...60FF

VCB = 45 V, IE = 0 , BCX70

VCB = 32 V, IE = 0 , TA = 150 °C, BCW60, ...60FF

VCB = 45 V, IE = 0 , TA = 150 °C, BCX70

ICBO

-

0.02

20

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0 IEBO - - 20 nA

DC current gain-

IC = 10 µA, VCE = 5 V, hFE-grp. G

IC = 10 µA, VCE = 5 V, hFE-grp. B/ H

IC = 10 µA, VCE = 5 V, hFE-grp. C/ J/ FF

IC = 10 µA, VCE = 5 V, hFE-grp. D/ K

IC = 2 mA, VCE = 5 V, hFE-grp. G

IC = 2 mA, VCE = 5 V, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, hFE-grp. D/ K

IC = 50 mA, VCE = 1 V, hFE-grp. G

IC = 50 mA, VCE = 1 V, hFE-grp. B/ H

IC = 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF

IC = 50 mA, VCE = 1 V, hFE-grp. D/ K

hFE

20

40

100

120

180

250

380

50

70

90

100

140

200

300

460

170

250

350

500

-

220

310

460

630

-

2007-04-20

4

BCW60, BCX70

DC Electrical Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VCEsat

-

0.12

0.2

0.25

0.55

V

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VBEsat

-

0.7

0.83

0.85

1.05

Base-emitter voltage1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

VBE(ON)

-

0.58

-

0.52

0.65

0.78

-

0.7

-

1Pulse test: t < 300µs; D < 2%

2007-04-20

5

BCW60, BCX70

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz Ccb - 0.95 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz Ceb - 9 -

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J /FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h11e

-

2.7

3.6

4.5

7.5

-

kΩ

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B /H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h21e

-

200

260

330

520

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, h

FE

-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, h

FE

-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h22e

-

18

24

30

50

-

µS

Noise figure

IC

= 200 µA,

VCE = 5 V, f = 1 kHz,

D f = 200 Hz, RS = 2 kΩ, hFE-grp. B - K

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. FF

F

-

2

1

-

2

dB

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 10...50 Hz , hFE-grp. FF

V

n

- - 0.135 µV

2007-04-20

6

BCW60, BCX70

DC current gain hFE = ƒ(IC)

VCE = 5 V

10

EHP00334BCW 60/BCX 70

-2 2

10mA

0

10

3

10

5

10

-1

10

0

10

1

C

FE

h

Ι

1

10

2

10

˚C

100

5

25

˚C

-50

˚C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0

10

EHP00332BCW 60/BCX 70

CEsat

V

V 0.5

-1

10

0

10

1

2

10

5

Ι

C

mA

0.1 0.2 0.3 0.4

˚C

100

25

˚C

-50

˚C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 40

0

10

EHP00331BCW 60/BCX 70

BE sat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

˚C

25

100

˚C

-50

˚C

Collector current IC = ƒ(VBE)

VCE = 5V

0

10

EHP00333BCW 60/BCX 70

BE

V

0.5 V 1.0

-2

10

-1

10

0

2

10

5

Ι

C

mA

5

1

10

˚C

100 25 -50

˚C ˚C

2007-04-20

7

BCW60, BCX70

Collector cutoff current ICBO = ƒ(TA)

VCB = VCEmax

0

10

EHP00335BCW 60/BCX 70

A

T

150

-1

4

10

Ι

CBO

nA

50 100

0

10

1

10

3

10

˚C

typ

max

10

2

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

10

EHP00330BCW 60/BCX 70

-1 2

10mA

1

10

3

10

5

10

0

10

1

10

2

C

T

fMHz

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0 4 8 12 16 V22

VCB(VEB

)

0

1

2

3

4

5

6

7

8

9

10

pF

12

CCB(CEB)

CCB

CEB

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW

360

Ptot

2007-04-20

8

BCW60, BCX70

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10

EHP00328BCW 60/BCX 70

-6

0

10

5

D

=

5

10

1

5

10

2

3

10

-5

10

-4

10

-3

10

-2

10

0

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t

p

=

DT

t

p

T

totmax

tot

P

DC

P

p

t

h parameter he = ƒ(IC) normalized

VCE = 5V

10

EHP00336BCW 60/BCX 70

-1 1

10mA

-1

10

2

10

5

100

C

e

h

Ι

1

10

5

CE

V

= 5 V

11e

h

h12e

h21e

h22e

5

h parameter he = ƒ(VCE) normalized

IC = 2mA

0

EHP00337BCW 60/BCX 70

CE

V

30

10 20

0.5

1.0

1.5

2.0

he

V

Ι

C

= 2 mA

h11e

21e

h

12e

h

22e

h

Noise figure F = ƒ(VCE)

IC = 0.2mA, RS = 2kΩ , f = 1kHz

10

EHP00338BCW 60/BCX 70

-1 2

10V

5

100101

F

10

15

20

dB

0

CE

V

2007-04-20

9

BCW60, BCX70

Noise figure F = ƒ(f)

VCE = 5V, ZS = ZSopt

10

EHP00339BCW 60/BCX 70

-2 2

10kHz

5

10

-1

10

0

F

1

10

15

20

dB

f

0

Noise figure F = ƒ(IC)

VCE = 5V, f = 120Hz

10

EHP00340BCW 60/BCX 70

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

S

R

= 1 M

ΩΩ

100 k

Ω

10 k

Ω

1 k

Ω

500

Noise figure F = ƒ(IC)

VCE = 5V, f = 1kHz

10

EHP00341BCW 60/BCX 70

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

Ω

= 1 M

S

R

100 k

Ω

10 k

Ω

1 k

Ω

500

Ω

Noise figure F = ƒ(IC)

VCE = 5V, f = 10kHz

10

EHP00342BCW 60/BCX 70

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

= 1 M

RS

100 k

10 k

500

1 k

Ω

2007-04-20

10

BCW60, BCX70

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25 MBC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2007-04-20

11

BCW60, BCX70

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.